BENCHMARK Search Results

D150*h02l

Abstract: D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l
Contextual Info: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ) s ( t 3 3 1 • RDS(on) * Qg industry’s benchmark

IEC60721-3-3

Abstract: L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology
Contextual Info: IDC08S120E 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

Storage of Products Supplied by Infineon Technologies

Abstract: IEC60721-3-3 IEC60721 L4926E
Contextual Info: IDC73D120T6H 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

ROADM JDSU

Abstract: ROADM Polatis FC/SC PATCH CORD SINGLE MODE ooo switch rs232 protocol Transistor 5503 EIA-526-14A
Contextual Info: Optical Switch Tray OST Optical Switch Tray The Polatis OST family of products set the industry benchmark for performance in a compact, fully non-blocking optical switch. The OST is an ideal platform for network-level switching, given its ultra-low loss, fast switch speed, and high reliability

Contextual Info: VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature TO-220 FULL-PAK

15ETX06-1

Abstract: 15ETX06S IRFP250
Contextual Info: VS-15ETX06SPbF, VS-15ETX06-1PbF Vishay High Power Products Hyperfast Rectifier, 15 A FRED Pt FEATURES • Benchmark ultralow forward voltage drop VS-15ETX06-1PbF VS-15ETX06SPbF • Hyperfast recovery time • Low leakage current • 175 °C operating junction temperature

Contextual Info: Temic Se mi t o n d u e t or s ♦ World-class excellence ♦ Benchmarking ♦ EFQM approach ♦ Measurement of customer satisfaction - QFD ♦ Corporate customer service policy ♦ Cost of quality ♦ TEMIC worldwide ISO 9000 certification ♦ FMEA-DOE ♦ Supplier partnership

STU16NC50

Contextual Info: STU16NC50 N-CHANNEL 500V - 0.22Ω - 16A Max220 PowerMesh II MOSFET TYPE STU16NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 16 A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

DSA00105971

Abstract: STP3NC50
Contextual Info: STP3NC50 N-CHANNEL 500V - 3Ω - 2.8A TO-220 PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP3NC50 500 V <4Ω 2.8 A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

intel 80287

Abstract: ibm at motherboard 80286 intel 80286 TECHNICAL intel 80287 arithmetic coprocessor 80C287-16 ic 80286 intel 80C287 coprocessor
Contextual Info: 80C287 Coprocessor/Software Accelerator Performance Benchmarks by Linda Bishop INTRODUCTION The math coprocessor/software accelerator performing floating-point arithmetic helps your 80286-based com­ puter do more work in less time. A computer with a high-speed math coprocessor installed can perform

Contextual Info: STL13DP10F6 Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet - production data Features 1 4 1 Order code VDS RDS on max. ID STL13DP10F6 100 V 0.18 Ω 3.3 A • RDS(on) * Qg industry benchmark

IEC60721-3-3

Abstract: Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60
Contextual Info: IDC05S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

LMC6041

Abstract: LMC6001 LMC6001AIH LMC6001AIN LMC6001BIH LMC6001BIN LMC6001CIN LM4040D1Z-2 ph probe amplifier LM6001
Contextual Info: LMC6001 Ultra Ultra-Low Input Current Amplifier General Description Featuring 100% tested input currents of 25 fA max., low operating power, and ESD protection of 2000V, the LMC6001 achieves a new industry benchmark for low input current operational amplifiers. By tightly controlling the molding compound, National is able to offer this ultra-low input current in

STS11N3LLH5

Abstract: 001411A
Contextual Info: STS11N3LLH5 N-channel 30 V, 0.012 Ω, 11 A, SO-8 STripFET V Power MOSFET Features Type VDSS RDS on max ID STS11N3LLH5 30 V < 0.014 Ω 11 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

Contextual Info: STL9N3LLH5 N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT 3.3x3.3 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL9N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

IRF620

Abstract: IRF620FP
Contextual Info: IRF620 IRF620FP N-CHANNEL 200V - 0.6Ω - 6A TO-220/FP PowerMesh II MOSFET TYPE IRF620 IRF620FP • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 6A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK

P008B DIODE

Abstract: STN1HNC60
Contextual Info: STN1HNC60 N-CHANNEL 600V - 7Ω - 0.4A - SOT-223 PowerMesh II MOSFET TYPE STN1HNC60 • ■ ■ ■ ■ VDSS RDS on ID 600 V <8Ω 0.4 A TYPICAL RDS(on) = 7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

STW12NC60

Abstract: diode F4 6A
Contextual Info: STW12NC60 N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NC60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.55Ω 12 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

irfp460

Abstract: irfp460 30v
Contextual Info: IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE IRFP460 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 18.4A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

E1789

Contextual Info: PD - 95173 IRG4BC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

MOSFET 20V 120A

Abstract: P300NH02L B300NH02L JESD97 STB300NH02L STP300NH02L
Contextual Info: STB300NH02L STP300NH02L N-channel 24V - 120A - TO-220 / D2PAK STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STB300NH02L 24V < 1.8mΩ 120A STP300NH02L 24V < 2.2mΩ 120A • RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced

20885 D

Abstract: 15ETX06 15ETX06PBF RoHS 20885 15ETX06FP IRFP250 PD-20885
Contextual Info: Bulletin PD-20885 rev. A 10/06 15ETX06PbF 15ETX06FPPbF Hyperfast Rectifier Features • • • • • • trr = 18 ns IF AV = 15Amp VR = 600V Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 175°C Operating Junction Temperature

D36NH02L

Abstract: JESD97 STD36NH02L
Contextual Info: STD36NH02L N-channel 24V - 0.011Ω - 30A - DPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD36NH02L 24V <0.0145Ω 30A (1) 1. Guaranteed when external Rg=4.7Ω and tf < tfmax • RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced

d38nh

Abstract: D38NH02L JESD97 STD38NH02L STD38NH02L-1 STD38NH02LT4
Contextual Info: STD38NH02L STD38NH02L-1 N-channel 24V - 0.011Ω - 38A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD38NH02L-1 24V <0.0135Ω 38A STD38NH02L 24V <0.0135Ω 38A • Logic level device ■ RDS(ON) * Qg Industry’s benchmark