PSOJ28 Search Results

Contextual Info: SIEMENS 2 M X 8-Bit Dynamic RAM 2 k-refresh HYB 5117800AJ-50/-60/-70/-80 Prelim inary Inform ation • • • • • • • • • • • • 2097152 words by 8-bit organization 0 to 70 'C operating temperature Fast access and cycle time RAS access time:

Q67100-Q1104

Abstract: Q67100-Q1105 Q67100-Q1106
Contextual Info: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time

Q907

Abstract: Q67100-Q915 Q554b
Contextual Info: SIEM ENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:

Contextual Info: SIEM EN S 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode HYB 5117800/BSJ-50/-60 HYB 3117800BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: •

21x21

Abstract: MM554 tray bga 45x45 bga X13769XJ2V0CD00 CPGA132 LA010 P14DH-100-300A2-1
Contextual Info: 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］のダイアログ・ボックスが表示されます。 3. 検索したいパッケージのNECコードを入力して， 検索 F をクリックしてください。

M621100

Abstract: 621-100
Contextual Info: Æ T S G S -1H 0 M S 0 N M621100 VERY FAST CMOS 1 Megabit 1M x 1 SRAM • 1 Megabit CMOS FAST SRAM ■ EQUAL CYCLE AND ACCESS TIMES: 15, 17,20, 25ns ■ LOW Vcc DATA RETENTION: 2V ■ SEPARATE DATA INPUT AND OUTPUT ■ JEDEC PLASTIC SOJ, 400 mil PACKAGE

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

thv8

Abstract: HYB39S16800T 16m x 4 hyb
Contextual Info: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15

SMD MARKING CODE 2M

Contextual Info: SIEMENS 2M x 8-Bit Dynamic RAM 2k-Refresh Hyper Page Mode- EDO HYB 5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC RAS access time 50 60 70 ns ^CAC

Contextual Info: SIEMENS 4M X 4-Bit D yn am ic RAM H YB 5116400J-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 v e rs io n )

Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 Advanced Inform ation • • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)

MK48S80

Contextual Info: rz 7 SGS-THOMSON i L IO T 0 K S s M K48S80 VERY FAST CMOS 8K x 8 CACHE TAGRAM • 8K x 8 CMOS SRAM WITH ON BOARD COMPARATOR ■ ADDRESS TO COMPARE ACCESS TIME: 15,17, 20,25ns ■ FAST CHIP SELECT COMPARE ACCESS : 8ns ■ MATCH OUTPUT WITH FAST TAG DATA TO

Contextual Info: Æ7 SGS-1H0MS0N ß _ [U fê W D M * 7 £ M 628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE • 32K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 12, 15, 20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mil PACK­

Q67100-Q1147

Abstract: Q67100-Q1148 WL10
Contextual Info: 2M x 8-Bit Dynamic RAM HYB3117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20 ns tAA Access time from address

5117400

Abstract: sem 2500 7212 tube
Contextual Info: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1

Contextual Info: SIEM EN S 2M x 8-Bit Dynamic RAM 2k Refresh Hyper Page Mode-EDO HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

Contextual Info: SIEM ENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: AC lCAC RAS access time -50 -60 -70 50 60 70 ns CAS access time 13 15

WL4 550

Abstract: Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 SOJ-28
Contextual Info: 2M x 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Information • • • • • • • • • • • 2 097 152 words by 8-bit organization 0 to 70 ˚C operating temperature Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC

Contextual Info: SIEMENS 512 K x 8-Bit Dynamic RAM Low Power 512 K x 8-Bit Dynamic RAM HYB 514800BJ-60/-70/-80 HYB 514800BJL-60/-70/-80 Advanced Information • 512 288 words by 8-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time RAS access time:

514400

Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
Contextual Info: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1

MS28008

Abstract: QV-11 65536-BIT
Contextual Info: SGS-THOMSON M628008 * 7 1 iflD gi(Q [lLi TrK(Q)MD©i VERY FAST CMOS 8K x 8 SRAM WITH OUTPUT ENABLE • 8K x 8 CM OS FAST SRAM W ITH OUTPUT ENABLE ■ EQUAL C YC LE AND ACCESS TIM ES: 10, 1 2 ,1 5 , 20ns ■ TRI-STATE COM M O N I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mils PACK­

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

M628008

Abstract: 4A92
Contextual Info: n Z J SGS-THOMSON ^ 7# [» ^©itLigTTGMOigS M628008 VERY FAST CMOS 8K x 8 SRAM WITH OUTPUT ENABLE • 8K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 10, 12,15, 20ns ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mils PACK­

48S74

Contextual Info: rz7 SGS-THOMSON ^ 7 M IL iC T i® « S If M K 48S74 VERY FAST CMOS 8K x 8 CACHE TAGRAM • 8K x 8 CMOS SRAM WITH ONBOARD COMPARATOR ■ ADDRESS TO COMPARE ACCESS TIME: 20, 25, 35ns - FAST CHIP SELECT COMPARE ACCESS 10ns ■ MATCH OUTPUT WITH FAST TAG DATA TO