PSMN4R3 Search Results

175C

Contextual Info: I2P AK PSMN4R3-80ES N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Rev. 01 — 28 December 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: I2P AK PSMN4R3-100ES N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK Rev. 1 — 31 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: TO -22 0A B PSMN4R3-100PS N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220 Rev. 1 — 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product

175C

Contextual Info: TO -22 0A B PSMN4R3-80PS N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Rev. 03 — 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

PSMN4R3-30PL

Abstract: transistor C982 PSMN4R3 43-m diode
Contextual Info: PSMN4R3-30PL N-channel 30 V 4.3 mΩ logic level MOSFET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

175C

Contextual Info: I2P AK PSMN4R3-80ES N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Rev. 02 — 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

175C

Contextual Info: TO -22 0A B PSMN4R3-80PS N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Rev. 01 — 27 December 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is

HD radio nxp application

Abstract: 175C
Contextual Info: D2 PA K PSMN4R3-80BS N-channel 80 V, 4.3 mΩ standard level MOSFET in D2PAK Rev. 01 — 27 December 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: D2 PA K PSMN4R3-30BL N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

BLF4G08LS-160A

Abstract: J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A
Contextual Info: NXP Semiconductors Product Discontinuation DN66 June 30, 2010 SEE DN66 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. FOR ADDED INFORMATION, REFER TO NXP WEB-SITE "http://www.nxp.com/products/eol/"

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

PHD78NQ

Abstract: BUK9507-30B BUK7608-40B PHB27NQ10T PHP18NQ10T ph43 PHD66NQ03LT BUK9575-100A PHP45NQ10TA si2302ds
Contextual Info: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

PSMN015-60PS

Abstract: BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN
Contextual Info: Power MOSFET Selection Guide 2010 Smaller, faster, cooler 2 Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4

TO220 package

Abstract: PSMN4R3-30PL PSMN trench PSMN012-80PS PSMN050-80PS PSMN1R6-30PL PSMN2R0-30PL PSMN2R2-40PS PSMN4R4-80PS
Contextual Info: Ten new high-performance Trench 6 MOSFETs in a TO220 package for power supply and motion control Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with ten new devices in the industry-standard

TRANSISTOR S1A 64 smd

Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030
Contextual Info: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form

2N7002 NXP MARKING

Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and

lfpak

Abstract: LFPAK package SOT669* PSMN017-60YS PSMN012-60YS as 220 1r7 PSMN015-60PS PSMN5R0-80PS PSMN013-30LL PSMN014-60LS PSMN017-30LL
Contextual Info: NXP power switching MOSFETs in compact QFN3333 package Smaller. Faster. Cooler. 30 V Trench 6 MOSFETs in 3.3 x 3.3 mm QFN package A new range of 30 V Trench 6 MOSFETs in QFN3333 SOT873 package NXP now offers a range of high-performance, 30 V, logic-level MOSFETs in QFN3333 package.

PHP45NQ10TA

Abstract: Ph9030l PMV213SN PHD66NQ03LT BUK9507-30B PHD78NQ BSH103 BUK95180-100A PSMN2R8-40PS BSH114
Contextual Info: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4

BSS84AKS

Abstract: PHB27NQ10T BUK9575-100A BSS138p infineon PSMN1R5-40 LFPAK footprint Renesas PSMN013-100ES SOT323 MOSFET PH BUK95180-100A NX3008
Contextual Info: Power MOSFET Selection Guide 2012 Smaller, faster, cooler 2 Table of contents 20 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 9