PSMN Search Results
PSMN Datasheets (500)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| PSMN002-25B |
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Original | 107.63KB | 13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN002-25P |
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N-channel enhancement mode field-effect transistor | Original | 107.62KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN003-25W |
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N-channel Logic Level TrenchMOS Transistor | Original | 98.58KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN003-30B |
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PSMN003-30B - N-channel enhancement mode field-effect transistor | Original | 218.77KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN003-30B |
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N-channel enhancement mode field-effect transistor | Original | 110.75KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN003-30B,118 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 75A D2PAK | Original | 13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN003-30B/T3 |
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N-channel enhancement mode field-effect transistor | Original | 110.75KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN003-30P |
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N-channel TrenchMOS intermediate level FET | Original | 218.76KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN003-30P |
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N-channel enhancement mode field-effect transistor | Original | 110.75KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN003-30P,127 |
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PSMN003-30 - TRANSISTOR 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | Original | 218.76KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN003-30P,127 |
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N-channel enhancement mode field-effect transistor; Package: SOT78 (TO-220AB); Container: Tube pack | Original | 110.75KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN004-25B |
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N-Channel Logic Level TrenchMOS Transistor | Original | 105.21KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN004-25B |
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N-channel logic level TrenchMOS transistor | Original | 102.66KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN004-25B |
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SiliconMax N-channel logic level TrenchMOS transistor | Scan | 492.39KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN004-25P |
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N-Channel Logic Level TrenchMOS Transistor | Original | 105.21KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN004-25P |
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N-channel logic level TrenchMOS transistor | Original | 102.66KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN004-25P |
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SiliconMax N-channel logic level TrenchMOS transistor | Scan | 492.39KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN004-36B |
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PSMN004-36B - N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 39 nC; RDS(on): 4@10V5@5V5.4@4.5V mOhm; VDSmax: 36 V | Original | 209.22KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN004-36B |
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Original | 102.02KB | 13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN004-36B,118 |
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PSMN004-36 - TRANSISTOR 75 A, 36 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | Original | 209.22KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PSMN Price and Stock
Nexperia PSMN4R8-100BSEJTrans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PSMN4R8-100BSEJ | 9,600 | 800 |
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Buy Now | ||||||
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PSMN4R8-100BSEJ | Tape & Reel | 25,600 | 13 Weeks | 800 |
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Buy Now | ||||
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PSMN4R8-100BSEJ | 10,758 |
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Get Quote | |||||||
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PSMN4R8-100BSEJ | 36,000 | 15 Weeks | 800 |
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Buy Now | |||||
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PSMN4R8-100BSEJ | 6,400 |
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Buy Now | |||||||
Nexperia PSMN040-100MSEXTrans MOSFET N-CH 100V 30A 8-Pin LFPAK EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PSMN040-100MSEX | 9,000 | 1,500 |
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Buy Now | ||||||
| PSMN040-100MSEX | 4,500 | 1,500 |
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| PSMN040-100MSEX | 4,500 | 1,500 |
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PSMN040-100MSEX | Tape & Reel | 21,000 | 13 Weeks | 1,500 |
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Buy Now | ||||
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PSMN040-100MSEX | 15,000 | 13 Weeks | 3,000 |
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Buy Now | |||||
Nexperia PSMN038-100YLXTrans MOSFET N-CH 100V 30A 5-Pin(4+Tab) LFPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PSMN038-100YLX | 7,500 | 445 |
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Buy Now | ||||||
| PSMN038-100YLX | 3,000 | 3,000 |
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Buy Now | |||||||
| PSMN038-100YLX | 560 | 22 |
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PSMN038-100YLX | 3,000 | 13 Weeks | 3,000 |
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| PSMN038-100YLX | Cut Strips | 560 | 13 Weeks | 1 |
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Nexperia PSMN7R5-30YLDXTrans MOSFET N-CH 30V 51A 5-Pin(4+Tab) LFPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PSMN7R5-30YLDX | 6,000 | 6,000 |
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Buy Now | ||||||
Nexperia PSMN8R5-40MSDXTrans MOSFET N-CH 40V 60A 8-Pin LFPAK EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PSMN8R5-40MSDX | 3,000 | 3,000 |
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Buy Now | ||||||
| PSMN8R5-40MSDX | 2,920 | 25 |
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| PSMN8R5-40MSDX | 1,500 | 562 |
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PSMN8R5-40MSDX | 3,000 | 18 Weeks | 1,500 |
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PSMN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
PSMN4Contextual Info: TO -2 20F PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 1 — 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, |
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psmn4r6-100xso220fot186apsmn4 | |
MBK10Contextual Info: PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 — 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package. |
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psmn015-100p/100bot404771-psmn015-100ppsmn015-100p+1 | |
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Contextual Info: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers |
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psmn3r0-30yldlfpak56 | |
PSMN8R0-40PSContextual Info: PSMN8R0-40PS N-channel 40 V 7.6 mΩ standard level MOSFET Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic |
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psmn8r0-40ps | |
PSMN050-80PSContextual Info: PSMN050-80PS N-channel 80 V 50 mΩ standard level MOSFET Rev. 01 — 10 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic |
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psmn050-80ps | |
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Contextual Info: PSMN1R8-40YLC N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and |
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psmn1r8-40ylc | |
PSMN009
Abstract: PSMN009-100B
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psmn009-100bpsmn009 | |
PSMN009
Abstract: PSMN009100P PSMN009-100P
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psmn009-100ppsmn009psmn009100p | |
PSMN7R0-30YLCContextual Info: LF PA K PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 1 September 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is |
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psmn7r0-30ylc | |
PSMN6R0-30YLContextual Info: LF PA K PSMN6R0-30YL N-channel 30 V 6 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in |
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psmn6r0-30yl | |
PSMN022-30PLContextual Info: PSMN022-30PL N-channel 30 V 22 mΩ logic level MOSFET Rev. 02 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic |
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psmn022-30pl | |
MOSFET D340Contextual Info: PSMN014-40YS N-channel LFPAK 40 V, 14 mΩ standard level MOSFET Rev. 03 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic |
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psmn014-40ysmosfet d340 | |
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Contextual Info: PSMN069-100YS N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET Rev. 02 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic |
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psmn069-100ys | |
4C530
Abstract: 003A MARKING PSMN4R5-30YLC PSMN4R5 4C530L
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psmn4r5-30ylc4c530003a markingpsmn4r5+1 | |
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PSMN013-30LLContextual Info: PSMN013-30LL N-channel QFN3333 30 V 13 mΩ logic level MOSFET Rev. 04 — 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power |
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psmn013-30llqfn3333 | |
MO-235
Abstract: PSMN4R0-30YL
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psmn4r0-30ylmo-235 | |
NXP datasheets
Abstract: PSMN3R5-30YL
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psmn3r5-30ylnxp datasheets | |
PSMN2R5-30YLContextual Info: PSMN2R5-30YL N-channel TrenchMOS logic level FET Rev. 01 — 10 September 2008 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in |
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psmn2r5-30yl | |
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Contextual Info: LF PA K 56 PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology 11 July 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been |
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psmn1r4-40yldlfpak56 | |
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Contextual Info: PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers |
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psmn1r0-30yldlfpak56 | |
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Contextual Info: LF PA K 56 PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 5 May 2014 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers |
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psmn1r2-30yldlfpak56 | |
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Contextual Info: TO -2 20A B PSMN7R8-100PSE N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package 11 August 2014 Product data sheet 1. General description Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to withstand |
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psmn7r8-100pse | |
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Contextual Info: LF PA K 56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 11 July 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been |
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psmn1r0-40yldlfpak56 | |
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Contextual Info: LF PA K 56 PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology 21 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been |
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psmn1r4-40yldlfpak56 | |