PRSS0004AE Search Results

H5N2501LD

Abstract: H5N2501LM H5N2501LS H5N2501LSTL-E PRSS0004AE-A PRSS0004AE-C Package Code 22
Contextual Info: H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

H5N2001LD

Abstract: H5N2001LM H5N2001LS H5N2001LSTL-E PRSS0004AE-A PRSS0004AE-C
Contextual Info: H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A Package name: LDPAK (L )

PRSS0004AE-A

Abstract: PRSS0004AE-C RJK1525DPE RJK1525DPE-LE RJK1525DPF RJK1525DPJ Package Code 22
Contextual Info: RJK1525DPJ, RJK1525DPE, RJK1525DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0623-0100 Rev.1.00 Apr.22,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

H7N0405LD

Abstract: H7N0405LD-E H7N0405LM H7N0405LS H7N0405LSTL-E PRSS0004AE-A PRSS0004AE-C
Contextual Info: H7N0405LD, H7N0405LS, H7N0405LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1367-0100 Rev.1.00 Sep 25, 2006 Features • Low on-resistance RDS on = 4.0 mΩ typ. • Low drive current. • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A

RJK4013DPE

Abstract: RJK4013DPE-00-J3
Contextual Info: RJK4013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1513-0200 Rev.2.00 Jul 02, 2009 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D

Contextual Info: H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0500 Previous: ADE-208-1416C Rev.5.00 Apr 07, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A

PM544

Abstract: ldpak PRSS0003AD-A PRSS0003AE-A PRSS0004AC-A PRSS0004AE-A PRSS0004AE-C TO220FM TO220CFM
Contextual Info: +2 -2 Packing form Non dry pack PRSS0004AC-A TO-220AB, TO-220ABV 50 PRSS0003AD-A TO-220FM, TO-220FMV 50 Non dry pack PRSS0003AE-A TO-220CFM, TO-220CFMV 50 Non dry pack PRSS0004AE-A LDPAK L , LDPAK(L)V 50 Non dry pack PRSS0004AE-B LDPAK(S)-(1), LDPAK(S)-(1)V

RJK4513DPE

Contextual Info: RJK4513DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1586-0100 Rev.1.00 Dec 08, 2009 Features • Low on-resistance RDS on = 0.33 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B

Contextual Info: RJL6012DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1750-0100 Rev.1.00 Oct 26, 2009 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B

H7N0310LD

Abstract: H7N0310LD-E H7N0310LM H7N0310LS PRSS0004AE-A PRSS0004AE-C
Contextual Info: H7N0310LD, H7N0310LS, H7N0310LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1125-0500 Previous: ADE-208-1422C Rev.5.00 Apr 07, 2006 Features • Low on-resistance RDS (on) = 8 mΩ typ. • Low drive current Outline RENESAS Package code: PRSS0004AE-A

2SK3211

Abstract: 2SK3211L-E 2SK3211STL-E PRSS0004AE-A
Contextual Info: 2SK3211 L , 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A

2SJ479STL

Abstract: 2SJ479 ldpak 2SJ479L-E PRSS0004AE-A
Contextual Info: 2SJ479 L , 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A

RJK6012DPE-00-J3

Abstract: RJK6012DPE
Contextual Info: RJK6012DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1481-0200 Rev.2.00 Oct 16, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D

RJK1008DPE

Abstract: RJK1008DPE-00-J3
Contextual Info: RJK1008DPE N-Channel Power MOSFET High-Speed Switching Use REJ03G1629-0100 Rev.1.00 Apr 03, 2008 Features • VDSS : 100 V • RDS on : 11 mΩ (Max) • ID : 80 A Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 2, 4 D 4 1 1. Gate

RJK6026DPE

Abstract: RJK6026 RJK6026DPE-00-J3
Contextual Info: RJK6026DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1479-0100 Rev.1.00 Jul 02, 2009 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D

RJJ0601JPE-00-J3

Abstract: RJJ0601JPE RJJ0601JPE-00-Q3
Contextual Info: RJJ0601JPE Silicon P Channel MOS FET High Speed Power Switching REJ03G1603-0100 Rev.1.00 Nov 21, 2007 Features • Low on-resistance RDS on = 8.2 mΩ typ. • Capable of 4.5 V gate drive • High speed switching Outline RENESAS Package code: PRSS0004AE-B

RJL6013DPE

Contextual Info: RJL6013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1748-0100 Rev.1.00 Nov 07, 2008 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B

RJL5013DPE

Contextual Info: RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1755-0100 Rev.1.00 Nov 18, 2008 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B

GN4014ZB4LD

Abstract: GN4014ZB4LS GN4014ZB4 GN4014ZB4LM PRSS0004AE-A igbt ignition
Contextual Info: GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Silicon IGBT Ignition Coil Driver REJ03G1249-0200 Rev.2.00 Jul. 14, 2005 Features • Including Clamping Zener VCL = 400 V typ • Low saturation Voltage VCE(sat) = 1.4 V(typ) • SMD package LDPAK Outline RENESAS Package code: PRSS0004AE-A

Contextual Info: Preliminary Datasheet CR12CS-16B Thyristor R07DS0414EJ0100 Rev.1.00 May 18, 2011 Medium Power Use Features • IT AV : 12 A • VDRM : 800 V • IGT: 30 mA • Non-Insulated Type • Planar Type Outline RENESAS Package code : PRSS0004AE-B (Package name: LDPAK (S)-(1) )

Contextual Info: Preliminary Datasheet RJK1525DPJ, RJK1525DPE, RJK1525DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0623-0200 Rev.2.00 Jun 30, 2010 Features • Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

Contextual Info: GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Silicon IGBT Ignition Coil Driver REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Features • Including Clamping Zener VCL = 400 V typ • Low saturation Voltage VCE(sat) = 1.4 V(typ) • SMD package LDPAK Outline RENESAS Package code: PRSS0004AE-A

RJK4512DPE

Abstract: RJK4512DPE-00-J3
Contextual Info: RJK4512DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1540-0100 Rev.1.00 Apr 10, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D

Contextual Info: 2SK3461 L , 2SK3461(S) Silicon N Channel Power MOS FET Power Switching REJ03G1102-0300 Rev.3.00 May 15, 2006 Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004AE-A