RJJ0601JPE Search Results

RJJ0601JPE-00-J3

Abstract: RJJ0601JPE RJJ0601JPE-00-Q3
Contextual Info: RJJ0601JPE Silicon P Channel MOS FET High Speed Power Switching REJ03G1603-0100 Rev.1.00 Nov 21, 2007 Features • Low on-resistance RDS on = 8.2 mΩ typ. • Capable of 4.5 V gate drive • High speed switching Outline RENESAS Package code: PRSS0004AE-B

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RJJ0601JPE

Abstract: RJJ0601JPE-00-J3 RJJ0601JPE-00-Q3
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid