RJL6012DPE Search Results

Contextual Info: RJL6012DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1750-0100 Rev.1.00 Oct 26, 2009 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B

Contextual Info: Preliminary Datasheet RJL6012DPE R07DS0814EJ0200 Previous: REJ03G1750-0100 Rev.2.00 Jun 21, 2012 600V - 10A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.88  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)

Contextual Info: Preliminary Datasheet RJL6012DPE R07DS0814EJ0200 Previous: REJ03G1750-0100 Rev.2.00 Jun 21, 2012 600V - 10A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.88  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid