LDPAK Search Results

2SK1620

Abstract: 2SK740
Contextual Info: 2SK1620 L , 2SK1620 S Silicon N-Channel MOS FET Application LDPAK High speed power switching Features 1 • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver

H5N2001LD

Abstract: H5N2001LM H5N2001LS H5N2001LSTL-E PRSS0004AE-A PRSS0004AE-C
Contextual Info: H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A Package name: LDPAK (L )

Hitachi DSA001653

Contextual Info: HRW2502A S Silicon Schottky Barrier Diode for Rectifying ADE-208-208B (Z) Rev. 2 Jan. 1996 Features • • • • Low forward voltage drop and suitable for high effifiency rectifying. Same power as TO-220AB. Small outline compared with TO-220AB. LDPAK(S) package is suitable for high density surface mounting.

Hitachi DSA00276

Contextual Info: 2SK3076 L ,2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jul. 1998 Features • • • • Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 D

Hitachi DSA002780

Contextual Info: 2SK3150 L ,2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750(Z) 1st. Edition January 1999 Features • • • Low on-resistance R DS =45mΩ typ. High speed switching 4V gate drive device can be driven from 5V source Outline LDPAK

2SK2737

Abstract: 2SK2885 Hitachi DSA0044
Contextual Info: 2SK2885 L , 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545A (Z) 2nd. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 G S 2 3 2

H7N0608LD

Abstract: H7N0608LM H7N0608LS
Contextual Info: H7N0608LD, H7N0608LS, H7N0608LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0144-0100Z Rev.1.00 Oct.30.2003 Features • Low on-resistance RDS on = 6.0 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline LDPAK D 4 G 1

2SK2958

Abstract: Hitachi DSA0044
Contextual Info: 2SK2958 L ,2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-568B (Z) 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 G 1 S 2 3 2

Contextual Info: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R ds(o„) = 4 m il typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK ADE-208-721B (Z) 3rd. Edition

Contextual Info: 2SK3150 L , 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance Rds = 45 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK

2SK3461

Abstract: Hitachi DSA0076
Contextual Info: 2SK3461 L , 2SK3461(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-944 (Z) 1st. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 4.3 m typ. • 4 V gate drive device • High speed switching Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate

FS10VS-12A

Abstract: FS10VS-12A-T11
Contextual Info: FS10VS-12A High-Speed Switching Use Nch Power MOS FET REJ03G0272-0100 Under development Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 600 V rDS ON (max) : 0.94 Ω ID : 10 A Outline LDPAK(S)-1 2, 4 4 1 1. 2. 3. 4. 1 2 3 Gate Drain

FS7VS-12A

Abstract: FS7VS-12A-T11
Contextual Info: FS7VS-12A High-Speed Switching Use Nch Power MOS FET REJ03G0271-0100 Under development Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 600 V rDS ON (max) : 1.3 Ω ID : 7 A Outline LDPAK(S)-1 2, 4 4 1 1. 2. 3. 4. 1 2 3 Gate Drain

2SJ215

Abstract: 2SJ242
Contextual Info: LjIE D Bi 44TbaOS □D12cm bDb « H i m 2SJ242 , 2SJ242 s - HITACHI/ OPTOELECTRONICS Silicon P Channel MOS FET Application LDPAK High speed power switching Features • • • • Low on—resistance High speed switching Low drive current

Hitachi DSA00280

Contextual Info: H7N0401LD, H7N0401LS, H7N0401LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1527C Z 4th. Edition May 2002 Features • Low on-resistance RDS(on) = 3.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching Outline LDPAK 4 4 4 D

Hitachi DSA00280

Contextual Info: 2SK3070 L ,2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition Feb. 1999 Features • Low on-resistance R DS(on) =4.5mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline LDPAK

2SJ550

Abstract: Hitachi 2SJ Hitachi DSA00315
Contextual Info: 2SJ550 L , 2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK

Contextual Info: HRW1002AS Silicon Schottky Barrier Diode for Rectifying Features Pin Arrangement • Low forward voltage drop and suitable for high emnency rectifying. • Same power as TO-220AB. • Small outline compared with TO-220AB. • LDPAKCDpacJcage is suitable for high density

PM544

Abstract: ldpak PRSS0003AD-A PRSS0003AE-A PRSS0004AC-A PRSS0004AE-A PRSS0004AE-C TO220FM TO220CFM
Contextual Info: +2 -2 Packing form Non dry pack PRSS0004AC-A TO-220AB, TO-220ABV 50 PRSS0003AD-A TO-220FM, TO-220FMV 50 Non dry pack PRSS0003AE-A TO-220CFM, TO-220CFMV 50 Non dry pack PRSS0004AE-A LDPAK L , LDPAK(L)V 50 Non dry pack PRSS0004AE-B LDPAK(S)-(1), LDPAK(S)-(1)V

2SJ384

Abstract: ds 300 ds-300 75 v
Contextual Info: 2SJ384 L , 2SJ384 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 Features 1 • • • • Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC – DC

2SJ297

Abstract: 2SJ291
Contextual Info: 2SJ297 L , 2SJ297 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC

2SK2912

Abstract: Hitachi DSA00238
Contextual Info: 2SK2912 L , 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G

RJK6012DPE-00-J3

Abstract: RJK6012DPE
Contextual Info: RJK6012DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1481-0200 Rev.2.00 Oct 16, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D

RJK1008DPE

Abstract: RJK1008DPE-00-J3
Contextual Info: RJK1008DPE N-Channel Power MOSFET High-Speed Switching Use REJ03G1629-0100 Rev.1.00 Apr 03, 2008 Features • VDSS : 100 V • RDS on : 11 mΩ (Max) • ID : 80 A Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 2, 4 D 4 1 1. Gate