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    2SJ479STL

    Abstract: 2SJ479 ldpak 2SJ479L-E PRSS0004AE-A
    Contextual Info: 2SJ479 L , 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A


    Original     		2SJ479 REJ03G0866-0300 PRSS0004AE-A PRSS0004AE-B 2SJ479STL ldpak 2SJ479L-E PRSS0004AE-A PDF

    2SJ479

    Abstract: 2SJ479L-E PRSS0004AE-A
    Contextual Info: 2SJ479 L , 2SJ479(S) Silicon P Channel DV-L MOS FET REJ03G0866-0200 (Previous: ADE-208-541) Rev.2.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching


    Original     		2SJ479 REJ03G0866-0200 ADE-208-541) PRSS0004AE-A PRSS0004AE-B 2SJ479L-E PRSS0004AE-A PDF

    2SJ479

    Abstract: 2SJ479L-E PRSS0004AE-A
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF