PNP-SI DARLINGTON POWER AMP Search Results

2SB1093

Abstract: 04 ow
Contextual Info: SEC l i T / '> 1J =1 > h Si l i con Tr ansi st or i i O 2SB1093 PNPx t a > '> * .? PNP Silicon Epitaxial Darlington Transistor Low Frequency Power Amplifier, Low Speed Switching ftW m / P A C K A G E DIMENSIONS 2 S B 1 0 9 3 iin ij > h y Y ÿ y ì? x 9 -e,

NTE135A

Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Contextual Info: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.

Contextual Info: N AMER PHILIPS/DISCRETE HSE D ^ 53^31 DoniB? 4 • BDX66; 66A . BDX66B; 66C T-3S -3I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A,

Contextual Info: J _ TIP140 TIP141 TIP142 V SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. SOT-93 plastic envelope. P-N-P complements are TIP145, TIP146

TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

Contextual Info: TIP125 TIP126 TIP127 _ / V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T O -220 plastic envelope. N-P-N complements are TIP120, TIP121

BDT65

Abstract: bdt65c bdt64
Contextual Info: BDT64;- 64A BDT64B; 64C PHILIPS INTERNATIONAL SbE D • 711002b 0043274 T1S MPHIN T -1 3 '7 / SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T0-220 plastic envelope. NPN complements are BDT65,

BOX53C

Abstract: BOX53 box54 BDX54 BDX53B BDX53 BDX53A BDX53C BDX54A BDX54B
Contextual Info: ŒkMOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDX53 BDX53A BDX53B BDX53C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVceo<sus = 4 5 V Min) - BDX53.BDX54

d45e3

Abstract: d45e2 d45e
Contextual Info: HARRIS SEMICOND SECTOR SbE ]> • 43G2271 Ü040Ô30 T'iS HHAS D45E Series File Number 2354 t 10-Ampere P-N-P Darlington Power Transistors -3 7 -2 -7 TERMINAL DESIGNATIONS Complementary to the D44E Series -40, -60, and -80 Volts, 50 Watts Gain of 1000 at -5 A

Contextual Info: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.

sanken high power audio amplifier

Abstract: darlington transistor for audio power application STD02P Pan Overseas pmt amplifier circuit B105 CF35 G746 SC102 STD02N
Contextual Info: STD02N and STD02P Darlington Transistors for Audio Amplifiers Features and Benefits Description ▪ Built-in temperature compensation diodes ▪ High power 130 W handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes,

T02012

Abstract: sanken high power audio amplifier pmt amplifier circuit STD01N Pan Overseas B105 CF35 G746 SC102 STD01P
Contextual Info: STD01N and STD01P Darlington Transistors for Audio Amplifiers Features and Benefits Description ▪ Built-in temperature compensation diodes ▪ High power 100 W handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes,

TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

Contextual Info: TIP120 TIP121 TIP122 _/ V SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio output stages and general amplifier and switching applications. TO-220 plastic envelope. P-N-P complements are TIP125, TIP126

BDX63

Contextual Info: N ANER PHILIPS/DISCRETE S5E D bbSETEl 0D111S7 b • BDX63; 63A BDX63B; 63C T - Z Z - W SIL IC O N DARLIN GTO N PO W ER T R A N S IS T O R S N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope, P-N-P complements are BDX62, BD X62A,

Contextual Info: BDV64; 64A BDV64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. N-P-N complements are BDV65,65A, 65B and 65C. QUICK REFERENCE DATA

Contextual Info: T IP 1 1 5 T IP 1 1 6 J _ T IP 1 1 7 V . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220AB plastic envelope. N-P-N complements are

BDT63

Abstract: BDT62
Contextual Info: BDT63; 63A BDT63B; 63C _A SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-220 plastic envelope. P-N-P complements are BDT62,

ECG130

Abstract: ECG222 ECG216 ECG196 ECG197 ECG210 ECG198 ECG192A ECG193A ECG194
Contextual Info: Transistors cont'd ECG193A ECG194 ECG195A ECG196 C ollector To Base Volts BV c b O Description and Application ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) 70 (Compl to ECG192A) MPN-Si, Gen Purp HV Amp, 180 Hi Speed Sw NPN-Si, RF Pwr Amp/Driver 70

SANKEN AUDIO

Abstract: sanken high power audio amplifier sanken audio amplifier
Contextual Info: STD02N and STD02P Darlington Transistors for Audio Amplifiers Features and Benefits Description ▪ Built-in temperature compensation diodes ▪ High power 130 W handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes,

2SB1474F5

Abstract: 2SB147
Contextual Info: h7 > V O C D $ /Transistors 4 4 7 4 C 2SB1474F5 C i t : ^ ^ '> 7 ^ U - t ^ P N P y |J = i > h 7 > y ^ ^ Epitaxial Planar PNP Silicon Transistor Darlington ffilM l^Jiltnffl/Low Freq. Power Amp. Wfö^äslSI/Dimensions (Unit : mm) • fc * 1) # - v > b hFE ^ ¡ a i- 'o

sanken high power audio amplifier

Abstract: STD01N sanken audio
Contextual Info: STD01N and STD01P Darlington Transistors for Audio Amplifiers Features and Benefits Description ▪ Built-in temperature compensation diodes ▪ High power 100 W handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes,

Contextual Info: T IP 1 1 0 TIP111 T IP 1 1 2 _ J V SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220AB plastic envelope. P-N-P complements are

5BE1

Abstract: bdt61 Darlington NPN Silicon Diode
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ]> I 711002 3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.

Contextual Info: J BDT65F; BDT65AF ^BDT65BF; BDT65CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.

Philips ECG222

Abstract: ECG222 ECG210 ECG130 ECG198 ECG216 ECG213 ECG217 ECG228A npn darlington transistor 150 watts
Contextual Info: PHILIPS E C G INC S4E D Transistors cont'd b v PNP-Si, A F PO ICompI to ECG192A) 70 ECG194 NPN-Si, Gen Purp HV Amp, Hi Speed Sw 180 ECG195A ECG196 C o lle c to r T o E m itte r V o lts Cbo bvceo 70 (CES) B a s e to E m itte r V o lt s b v M ax. C o lle c to r