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    T0218 Search Results

    T0218 Datasheets (1)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    T0218
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 119.46KB 1
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    T0218 Price and Stock

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    Samtec Inc HLT-0218-T-T

    .100 Screw Machine Terminal Array
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    Master Electronics HLT-0218-T-T
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    Sager HLT-0218-T-T
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    Samtec Inc TCMD-05-T-02.18-01

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    Samtec Inc FFMD-13-T-02.18-01-N

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    Bourns Inc 4816P-T02-183LF

    Res Thick Film NET 18K Ohm 2% 1.28W ±100ppm/°C BUS 16-Pin SOM Gull Wing SMD Automotive Tube
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    Master Electronics 4816P-T02-183LF
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    Avnet Americas 4816P-T02-183LF Tube 9 Weeks 2,000
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    Newark 4816P-T02-183LF Bulk 2,000
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    Avnet Abacus 4816P-T02-183LF 9 Weeks 2,000
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    Bourns Inc 4820P-T02-183

    RNET-THK FILM SMD MED BODY
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    Avnet Americas 4820P-T02-183 Tube 2,000
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    T0218 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    milli ohm resistor

    Contextual Info: Product – Specification 11th February 2004 ISSUE 7 TYPE MPF SERIES Radial Leaded High Power Resistors TYPE MPF SERIES KEY FEATURES This small non-inductive, high power resistor is another innovative product available from Tyco Electronics CGS. Housed in a standard T0218 package it is ideally


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    t0218milli ohm resistor PDF

    siemens igbt BSM 300

    Abstract: Q67040-A4221-A2 BSM 214 A Q67040-A4222-A2 Q67040-A4225-A2 Q67040-A4228-A2 Q67040-A4229-A2 Q67040-A4230-A2 Q67040-A4420-A2 Q67040-A4423-A2
    Contextual Info: Duo-Packs IGBT + antiparallele Diode Typ Type V BUP 400 D Duo-Packs (IGBT + antiparallel diode) A Bestellnummer Ordering Code Gehäuse Package Bild Figure 600 14.0 Q67040-A4423-A2 P-T0220-3-1 11b BUP 602 D 600 36.0 Q67040-A4229-A2 P-T0218-3-1 10b BUP 603 D


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    q67040-a4423-a2p-to220-3-1q67040-a4229-a2p-t0218-3-1+9q67040-a4230-a2q67040-a4420-a2p-t0220-3-1q67040-a4225-a2siemens igbt bsm 300q67040-a4221-a2bsm 214 aq67040-a4222-a2q67040-a4228-a2 PDF

    TF 450

    Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218


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    t0218nte2305t0220tf 450 PDF

    ls250

    Contextual Info: »14 HEAT SINKS P R E S S E D A L U M I N I U M - LOUVRE S I N K S LS250 13°C/W T0220, T0218, T03P 22.0 B O A R D S O L D E R A B L E TAGS -2 5 .4 DEVICE MA Y BE FIXED WITH SCREW OR CUP SEE C U P 04 LS300 12°C/W T0220, T03P 17.8 44.0 ? <•>. A HOLES @ 3.7 0


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    ls250t0220t0218ls300+1ls305 PDF

    LS205

    Abstract: LS220 ABL LS220
    Contextual Info: HEAT SIN K S P R E S S E D ALUMINIUM - LOUVRE S I N K S LS205 30°C/W T0220 4.00 15.0 m l 3? 12.5 22.0 DEVICE MA Y BE FIXED WITH SCR E W OR C LIP S EE C LIP 04 LS210 19.0 M 35°C/W T0220 4 .0 0 mm LS220 T0220, T0218, T03P A N D M O S T P LA S TIC PACKAG ED D EVIC ES


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    ls205t0220ls210ls220+2t0218ls220 abl PDF

    STPS3045CW

    Abstract: top-31 T0-218AC STPS12045TV T0247 T0218 stps6045cw STPS80100TV
    Contextual Info: POWER RECTIFIERS 5 7. SGS-IHOMSON mi TOP3I POWER SCHOTTKY DIODES T0218AC T0247 ISOTOP' Isolated T0247, T0218, TOP3 AND ISOTOP TYPE SCHOTTKY RECTIFIERS T j (max) =150°C (except for 15V) lo Device V rrm V f @ lo I r @ V rrm I fsm Max (V) Max (mA) (A) Package


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    t0218act0247t0218stps3045cpi+11stps6045cpistps3045cpstps4045cpstps6045cpstps20l40cwstps3045cwtop-31t0-218acstps12045tvstps6045cwstps80100tv PDF

    DA 2688

    Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
    Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055


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    tip3055tip2955t0-218aa7s265+10da 2688transistor da 2688lt 5265transistor mj 3055c2688c-2688equivalent transistor tip3055c2688 lc2688 transistortransistor c2688 PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    sg379/d1n965brlzen15v1n751as+151n967brlzen18v1n751asrl1n968brlzen20vmc68b21cpxcm916x1cth16transistor marking code 12w sot-23sg379mc68b54pxc68hc805p18cdwmc68b50cpmc2830ne555nchn ne555n PDF

    Q400414

    Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
    Contextual Info: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•


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    -t-25-0mac974mac976mac97a+15mac97a6mac97a8sc92bt0218acbtb41200bq40041406040j7to810mhq2006l5 triacq2008f51triac sc141dl201e5sc136bl4004f91t6401m PDF

    Halbleiterbauelemente DDR

    Abstract: mikroelektronik Heft 12 VEB mikroelektronik information applikation Mikroelektronik Information Applikation Transistoren DDR information applikation mikroelektronik mikroelektronik Heft sy 710 applikation heft
    Contextual Info: m o t ^ o e l e l - c f a n c i r Information Applikation Bauelemente der Leistungs­ elektronik SW77 Bipolare SchaltTransistoren i i l - c m t n r D o lk in î^ e lB l-c ta n a r iik Information Applikation H e f t : BAUELEMENTE DER LEISTUNGSELEKTRONIK


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    halbleiterbauelemente ddrmikroelektronik heft 12veb mikroelektronikinformation applikation+6mikroelektronik information applikationtransistoren ddrinformation applikation mikroelektronikmikroelektronik heftsy 710applikation heft PDF

    S299

    Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDF-4F6-001 REV: 1 Page: 1/5 0.39" Quadruple Digit Displays ELF-4F6VGWB/S299 PART NO. : ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ●


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    cddf-4f6-001elf-4f6vgwb/s29930mins299 PDF

    Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. CDLE-353-003 Device Number : REV.: 2 Page: 1/4 2.0*3.2mm Rectangle Type LED Lamps PART NO. : ECN : 3534GT █ Features : █ ● Choice of various viewing angles ● Available on tape and reel. ● Reliable and robust Package Dimensions:


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    cdle-353-0033534gt30min PDF

    NTE374

    Abstract: NTE383 switch audio NTE398 NTE377 NTE373 NTE387 NTE38
    Contextual Info: Maximum Breakdown Voltage Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) lypical Freq. (MHZ) Case Style Diag. No. Maximum Collector Current (Amps) •c


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    387mp407-512mhz407-512mht0218+8nte374nte383switch audionte398nte377nte373nte387nte38 PDF

    Contextual Info: TECCÔR ELE CTRONICS INC 24E D- Afl72fln 0001311 7 ~ 2 S -Z 2 > TECCOR ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 ALTERNISTORS General Description 15-40 Amps T h e se Alternistors are offered in three b a sic


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    afl72fln PDF

    Contextual Info: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is


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    buz384bbs3i3100147t0t-39-13+2bb53t31q0147ts PDF

    buz349

    Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    bb53t31buz349tq218aabbs3131+3t-39-13b53131d0147sq PDF

    T1C263M

    Abstract: q4015 triac T1C226D Q200BL5 Q2006L5 Q5025Z6 SC160D q201015 Q4015A Q4006
    Contextual Info: PART No. ITrms Amps PACKAGE VDRM IDRM Volts mAmps Q1 TRIAC IGT Q2 Q3 mAmps Q4 VGT Volts Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms TO—92 Package MAC974 MAC976 MAC978 MAC97A4 MAC97A6 MAC97A8 200 400 600 200 400 600 .010 .010 .010 .010 .010 .010 10 10 10 5


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    mac974mac976mac978mac97a4+16mac97a6mac97a8sc92bsc92csc92dsc92mt1c263mq4015 triact1c226dq200bl5q2006l5q5025z6sc160dq201015q4015aq4006 PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845 PDF

    BUZ358

    Abstract: LDM80
    Contextual Info: N AMER PHILIPS/DISCRETE OLE D PowerMOS transistor bbSBTBl 0014050 7 BUZ358 r - 3 ^ - ls May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    bb53131buz358r-31-t0218aa+3t-39-13800vcldm80 PDF

    transistor KF 517

    Abstract: BUZ310 KF 517 BUZ31 BUZ-310 B53 transistor
    Contextual Info: N AMER PH ILI PS/DIS CRET E : ObE D Pow erM O Stransistor • 1 ^ 53^31 D D iqflBI 5 ■ B U Z 31Ü ^ 2^-1/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    buz31t0218aabb53t31buz310+5t-39-11transistor kf 517kf 517buz-310b53 transistor PDF

    BUZ384

    Contextual Info: N AMER PHILIPS/DISCRETE GbE D PowerMOS transistor • bbSBTBl 001470? 4 ■ BUZ384 t - 2*?'13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is


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    buz384t0218aat-39-13 PDF

    MC 140 transistor

    Abstract: "MC 140" transistor buz355 transistor 502 alps 502 C alps 503 a
    Contextual Info: N AMER PHILIPS/DISCRETE j ObE D • PowerMÔS transistor ^53131 0014015 5 m BÜZ355 r - 3cj - l 3 May 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    buz355tis-18t0218aabuz355+6t-39-13mc 140 transistormc 140" transistortransistor 502alps 502 calps 503 a PDF

    ECG229

    Abstract: ECG247 DIODE T28 ECG234 ECG251 ECG191 ECG2541 transistor ecg246 ECG232 ECG233
    Contextual Info: Transistors cont'd Collector To Base. Volts b v Cbo Description and Application ECG Type ECG229 ECG232 (Maximum Ratings at T c = 25°C Unless Otherwise Noted) NPN-Si, VHF Ose, Mix, IF Am p 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter


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    ecg229ecg232ecg233ecg234+11ecg23st0-218ecg257o-127ecg258ecg247diode t28ecg251ecg191ecg2541transistor ecg246 PDF

    BUZ311

    Abstract: P70D
    Contextual Info: N AMER PHILIPS/DISCRETE DbE D m PowerMOS transistor □bS3T31 OGlMaBb E • BUZ311 T* ~ 3 I I^ May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    buz311t0218aap70d PDF