PN363 Search Results

TN2905A

Abstract: PN3638 PN3638A PN3644 PN3645 PN4143 TIS93
Contextual Info: This I Material u~ Ln □ fc-1 t-1 ÜJ □ □ PNP General Purpose Amplifiers and Switches V Device No. Case Style Copyrighted □ j: □ PN3638 jr TO-92 92 CBO V CEO V 1 'c e s EBO (V) Min (V) Min (V) Min 25 25 4 * V V CE(SAT) 'C B 0 @ V CB PN3638A TO-92

PN3639

Abstract: PN3640
Contextual Info: 'iM F H i M ìì Central PN3639 PN36*K Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors PNP SILICON TRANSISTOR JEDEC TO-92 CASE (EBC) DESCRIPTION

2N4872

Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837

2SB641

Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

2SB641 r

Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

Contextual Info: PN3639 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)6.0 I(C) Max. (A)80m Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10nx @V(CBO) (V) (Test Condition)

Contextual Info: - PN3638, PN3638A are PNP silicon planar epitaxial transistors designed for small signal general purpose amplifiers and switches. TRANSISTORS Sdr* :i .t i ! 5 ! EBC -• ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage VgE=0)

pn3638

Contextual Info: SEMICONDUCTOR ¡m PN3638 PN3638A PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum RâtinÇjS

tpn3643

Abstract: MPS3640 PN3641 27424 MPS3639 MPS3638 MPS3638A PN3638 PN3638A PN3643
Contextual Info: FAIRCHILD SEM ICONDUCTOR 34 3469674 FAIRCHILD SEMICONDUCTOR PN/MPS/FTS03638 PN/M PS/FTS03638A f a ir c h il d iS S S S S S t • • • • J7' ^ PNP Small Signal General Purpose Amplifiers & Switches PACKAGE PN3638 PN3638A MPS3638 MPS3638A FTS03638 FTS03638A

PN3638A

Abstract: PN3638 PN2907A PN363
Contextual Info: SEMICCD N ÎO LJCI^TO F? -m PN3638 PN363ÔA PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d for u se a s g e n e ra l p u rp o s e am p lifiers a n d s w itc h e s req uirin g c o llec to r c u rre n ts to 5 0 0 m A . S o u rc e d from P ro c e s s 6 3. S e e P N 2 9 0 7 A for c h a ra c te ristics .

PN3638

Abstract: PN3638A PN2907A
Contextual Info: PN3638 PN3638A C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol

PN3638

Abstract: PN3638A
Contextual Info: Sv - : PN3638 A PNP SILICON TRANSISTORS PN3638, PN3638A are PNP silicon planar epitaxial transistors designed for small signal general purpose amplifiers and switches. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage VgE=0) Collector-Emitter Voltage (lB=0)

PN3638

Abstract: PN3638A
Contextual Info: PN3638.A PNP SILICON TRANSISTORS PN3638, PN3638A are PNP silicon planar epitaxial transistors designed for small signal general purpose amplifiers and switches. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 25V V CES 25V Collector-Emitter Voltage I b = 0

PN3638A

Abstract: CBVK741B019 F63TNR PN2222N PN2907A PN3638
Contextual Info: PN3638 PN3638A C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol

MPSL51

Abstract: P2N2907 PN2906 PN2906A PN2907 PN3638 PN3638A PN3644 PN3645
Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) Maximum Ratings Type No. MPSA93 MPSL51 P2N2907 P2N2907A PN2906 PN2906A PN2907 PN29Q7A PN3638 PN3638A 200 ^CEO ^EBO (V) Min (V) Min 200 'c (W) (A) @Tc=25°c

Contextual Info: SEM ICONDUCTOR • PN3638 PN3638A it}* TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum RatinQS

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

NS3762

Abstract: PN4258
Contextual Info: {DISCRETE} £> 3 2 CM CO CM CM in to ICO 100 100 90 co o CO 20 20 10 o o o § 300 250 0 ID CO CO CO 25 o 30 o o CO > o o • »J o c 1- 40Ö , o o s t i l l 0 ■> U3 c ▼* <0 (£> - 5 O S- O C PJ ! S CO 3 0 c T- O * if > in CM 0 I o r - Ci o c 00 r- id

2N3702 NATIONAL SEMICONDUCTOR

Abstract: national 2N3392 NATIONAL SEMICONDUCTOR TO-92 2N3393 2N3702 BC338/BC328 2N3391A 2N3392 PN3565 2N4124
Contextual Info: n NAIL SEMICOND -[DISCRETE t.3E D • bSD113a Q03TS33 b7ti Devices V CE0 sust (Volts) Min 25 NPN PNP mi mA NF (dB) (MHz) Min mA Max 5.0 P D (Amb) Package (mW) @25 °C Max Min Max 2N3391A 100 250 500 2.0 120 Typ. 2.0 2N3392 100 150 300 2.0 120 Typ. 2N3393

Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. M PSA 9 3 M PSL51 P2N2907 ^ c so ^CEO V EBO (V) Min (V) Min (V) Min 200 200 5 100 60 100 40 4 5 Electrical Characteristics (Ta=25'C. Unless Otherwise Specified) 'c (W) (A) 0Tc=25°c 0.625 0.625

TO92A

Abstract: TO-92a MPS4355 MPS6591 MPSD05 MPS9647 MPS9468 MPS3702 MPS3703 MPS3705
Contextual Info: T Y PE NO. P O L A R IT Y Medium Power Amplifiers and Switches M A X IM U M R A T IN G S CASE P d ImtVI •c A H FE V C E (S A T ) V CEO (V ) min m ax 'c (m A) V CE (V) max f T min Cob COM PLE­ max M ENTARY (MHz) (pF) TYPE 0.05 0.05 0.1 0.1 0.1 100 100

NPN 2907A EBC

Abstract: 2907A EBC 2222a pn
Contextual Info: small Signal Transistors TO-92 Case Continued TO-92 T Y P E MO, F A M IL Y LEA D CODE VC B O v CEO v EBO (V) 00 MW *^ C 6 S U ftf MU'! IliN ipstf* *e s 8 "fe w m * WS; •CBO s* V C BC - m • V c s *» c W (V ) MN ' - m (*A ) v C E fS A K > « * C 00 (« A )

NZMN3-AE630

Abstract: NZMN3-AE400 moeller circuit breaker nzm3 NZMB1 NZMN2-A250 NZMN3-VE630 NZMB1-A160 moeller circuit breaker nzm4 NZM14 NZM4-XU208-240AC
Contextual Info: http://nzm.moeller.net Switching, protection, communication: the new NZM circuit-breaker series up to 1600 A Reliably and safely controlling, switching and managing power. In industry, in buildings and in machine construction. Innovative protection concepts.

MPS6591

Abstract: MPS-8000 mps9418 MPS4355
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. PO LA ­ CASE RITY M A X IM U M RA TING S VcEO Pd Ic ^CER * mW (V) (A) H FE VcE(sat) min max Ic V ce max Ic (mA) (V) (V) (A) fr Cob min max (M H z) (M H z) C O M PL E ­ M EN TAR Y TYPE MPS4354 MPS4355 MPS4356