PN10 Search Results

lu110

Abstract: PN108CL
Contextual Info: Panasonic Phototransistors PN108CL Silicon NPN Phototransistor U nit : mm For optical control systems • Features • H ig h se n sitiv ity : I C e l = 3-5 m A (m in .) (at L = 5 0 0 lx ) . 3 -00.45+ 0.05 • W id e d irection al se n sitiv ity for e a sy u se

2N5551 CJ

Contextual Info: This I tr Material Ln a b-1 t-1 U a NPN General Purpose Amplifiers and Switches Device No. Case Style ^C B O V CEO Copyrighted V Min (V) Min (V) Min 75 45 6 CD jr PN100 CD TO-92 (92) vEBO (continued) ICES* *CBO (nA) Max 50 V @ CB hFE (V) Min 60 80 100 100

PANASONIC MA

Abstract: 2856K PN107 PN108
Contextual Info: Panasonic Phototransistors PN107, PN108 Silicon NPN Phototransistors For optical control system s • F eatures • High sensitivity : I C e l = 5 mA (min.) (at L = 100 lx) • N arrow directional sensitivity for effective use o f light input • Fast response : tr = 5 (_ls (typ.)

MMBT101

Abstract: PN101
Contextual Info: PN101/MIUIBT101 NAT L SEMICOND DISCRETE D tSG113G d O ^ a i D PN101 S 'T - 2 7 - 7 3 . - National ' Semiconductor WA Jlm ] HE M M BT101 TO-236 (SOT-23) TO-92 E0 U TU G /10100-5 C TUG /10100-1 NPN General Purpose Amplifier Electrical Characteristics t a

100S

Abstract: PN106 KS2500
Contextual Info: Panasonic Phototransistors PN106 Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity • F a st resp o n se : tr = 3.5 |^s typ. • N arro w directional sensitivity fo r effective use o f lig h t input • S ignal m ixing c ap ab ility using ba se pin

PN101

Contextual Info: Panasonic Phototransistors PN101 Silicon NPN Phototransistor For optical control systems • Features • High sensitivity • W ide spectral responsivity, suited for detecting GaAs L E D ’s • Low dark current : I C e o = 5 nA typ. • Fast response : tr, tf = 3 |xs (typ.)

pnp pn100 transistor

Abstract: PN100 TRANSISTOR transistor pn100 pn200 PN100 PN100A PN200A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High sensitivity: IL = 5 mA (min.)  Narrow directivity characteristics for effective use of light input

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108 (PN108) Silicon planar type For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll

t1 BC547

Abstract: specifications of BC547B transistor BC547B bc547c fairchild transistor bc547 specifications 547B 547C Bc547B TRANSISTOR BC547A CBVK741B019
Contextual Info: BC547 / BC547A / BC547B / BC547C BC547 BC547A BC547B BC547C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

PN100

Contextual Info: PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier • • This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. C E TO-92 1 B SOT-23 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A

Contextual Info: 2N3416 2N3417 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum RâtinÇjS Symbol T A = 25°C unless o th e rw ise noted

2n5172

Abstract: 2N517
Contextual Info: SEMICONDUCTOR ¡m 2N5172 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol

Contextual Info: Panasonic Phototransistors PN107F, PN108F Silicon NPN Phototransistors For optical control systems • Features • F la t w indow d esig n w hich is suited to op tical system s • W ide directio n al sen sitiv ity for easy use • F a st re sp o n se : tr = 8 jlls typ.

BC547 as amplifiers

Abstract: bc547b BC547A BC547C BC547 C 547c transistors 547C BC547C SEMICONDUCTOR 547A Use of BC547 transistor
Contextual Info: BC547 BC547A BC547B BC547C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*

2N3704

Abstract: equivalent transistor 2n3704 PN100
Contextual Info: 2N3704 2N3704 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol

pn200

Abstract: PN100 PN100A PN200A pnp pn100 transistor transistor pn100
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109CL (PN109CL) Silicon planar type Unit: mm • High sensitivity: ICE(L) = 2 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.)

2N5172

Abstract: PN100
Contextual Info: 2N5172 E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

D5387

Abstract: 12337 CP-851
Contextual Info: T H IS COPY IS PROVIDED ON A RES TR IC TED B A S IS AND PANDUIT PART NUMBER STUD SIZE PN10-5SLF-2K PN10-6SLF-2K PN10-8SLF-2K PN10-10SLF-2K PN10-14SLF-2K IS NOT TO BE USED D 1MENS IONS . ±.040 A .86 #5 121.84 .86 #6 121.84) .92 #8 123.37) .92 #10 123.37)

MMBT100

Abstract: PN100A MMBT100A PN100
Contextual Info: PN100 PN100A MMBT100 MMBT100A C E C B TO-92 B SOT-23 E Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol

PN106

Abstract: PNZ106 npn phototransistor
Contextual Info: Phototransistors PNZ106 PN106 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs (typ.) Narrow directional sensitivity for effective use of light input