547B Search Results

transistors 547C

Abstract: 2N6660 JANTX 2N6660 2N6661 Transistor 547c
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 September 2009. MIL-PRF-19500/547C 24 June 2009 SUPERSEDING MIL-PRF-19500/547B 30 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

Hitachi DSA0076

Abstract: 2SJ505 Hitachi 2SJ
Contextual Info: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547B (Z) 3rd. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK

2SJ505

Abstract: 2SJ505L-E PRSS0004AE-A
Contextual Info: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET REJ03G0872-0400 (Previous: ADE-208-547B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.017 Ω typ. • Low drive current. • 4 V gate drive devices.

2N6660 JANTX

Abstract: 2N6660 2N6661 MIL-PRF19500
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 October 1999 INCH-POUND MIL-PRF-19500/547B 30 July 1999 SUPERSEDING MIL-S-19500/547A 20 January 1988 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

bc 147 transistor

Abstract: transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b
Contextual Info: EPOXY TRANSISTORS •• CONTINENTAL DEVICE INDIA 3SE D 0Q0D014 b • T “ 3 i-ty ■ COMMERCIAL/ENTERTAINMENT APPLICATIONS • Device VCEO VCBO VEBO Volts Volts Volts min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA max mW max MA Voits

semikron SKHI 21

Abstract: SKHI22B DRIVER IGBT SEMIKRON SKPC semikron SKpc 22 semikron SKHI 22 skhi-22b resistor 4k7 igbt inverter schematics semikron SKpc SKHI 25W
Contextual Info: 3ULQWHG &LUFXLW %RDUG IRU 6.+, $ DQG 6.+, $% GULYHUV 6.3&  Preliminary Data HDWXUHV Fig. 1 • • • • Schematics J1, J2; Open => used with external distributing gate board for paralleled IGBTs CN2 and CN3 only). Closed => used with single IGBT or 2

S24LCA20

Abstract: L41C S20FND12 S48B s20lc20u S20LCA20 547B S20FND10 S20FNK02 S20FNK04
Contextual Info: - M m S20FND1Q S20FND12 S20FNK02 S20FNK04 S20FNK0B S20FNK08 S20FNK10 S20FNK12 S20FUA01 S20FUA02 S20FUA04 S20FUD01 S20FUD02 S20FÜD04 S20FUK01 S20FUK02 S20FUK04 S20LC20U S20LC40 S20LCA20 S20SC4M S20SC9M S20VT60 S20VT80 s m rm S20VTA80 S20WB20 S20WB60 S24LCA20

t1 BC547

Abstract: specifications of BC547B transistor BC547B bc547c fairchild transistor bc547 specifications 547B 547C Bc547B TRANSISTOR BC547A CBVK741B019
Contextual Info: BC547 / BC547A / 547B / BC547C BC547 BC547A 547B BC547C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

S24LCA20

Abstract: S20LCA20 L41C S20VT60 s20lc20u 547B S20FND10 S20FND12 S20FNK02 S20FNK04
Contextual Info: - M m « tt « S20FND1Q S20FND12 S20FNK02 S20FNK04 S20FNK0B * ' -y y # 'j iS y * V * 'y * ') & y H 'y y S20FNK08 S20FNK10 S20FNK12 S20FUA01 S20FUA02 * * * * S20FUA04 S20FUD01 S20FUD02 S20FÜD04 S20FUK01 S20FUK02 S20FUK04 S20LC20U S20LC40 S20LCA20 V) * ) 'y y

Contextual Info: 1234567897A 123452675829AB2C8DC9E57F DDB2796298476B99127BD63B 123456789ABC DEF289C AC A 123456761898AA9BCDEF6E 38A8FD865C8F66 BD86FD 86!!"666666 #$%%&65C8F666666 18D'6 C8 6 -D.)6 27DA)66 28)6 *+$6,"%6,""676#66666

ic 546

Abstract: 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b
Contextual Info: BC 546 . BC 549 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0

diac D30

Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED

transistor bc548 bp

Abstract: transistor 548c BC546A transistor bc547 applications bc546c bc548 Transistor 547c
Contextual Info: MCC BC546A/B/C BC547A/B/C BC548A/B/C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features NPN Silicon Through Hole Package 150oC Junction Temperature x x

BC547 as amplifiers

Abstract: bc547b BC547A BC547C BC547 C 547c transistors 547C BC547C SEMICONDUCTOR 547A Use of BC547 transistor
Contextual Info: BC547 BC547A 547B BC547C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*

DIN 74 - Bm5

Abstract: sandisk eMMC SLIMbus sandisk emmc 4.5 dk 2482 h transistor sandisk eMMC 4.41 OMAP4470 lpddr2 pcb design MIPI CSI design guideline OMAP 4470
Contextual Info: OMAP OMAP4470 Multimedia Device Engineering Sample ES1.0 Version A Data Manual Public Version PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not

c547a

Abstract: C548A C546A C548 HE bc548 BC 548B BC 547 data base BC547 motorola C 547 BC548
Contextual Info: BC546, A, B BC547, A, B, C BC548, A, B, C MAXIMUM RATINGS Rating Sym bol BC BC BC 546 547 548 Unit C o lle c to r- E m itte r V o lta g e VCEO 65 45 30 Vdc C o lle c to r-B a s e V o ita g e VC BO 80 50 30 Vdc E m itte r-B a s e V o lta g e VEBO 6 .0 Vdc C o lle c to r C u rre n t - C o n tin u o u s

c546b

Abstract: c557b of bc 237 b C547B c558b BC 9014 ba W61C c 557b 082BC w61b
Contextual Info: NPN General Purpose Amplifiers & Switches Device No. [Mark] B C W65C [ED ] Case Style TO-236 49 V CEO (V) Min 32 B C X 58 TO-92 (97) 32 BSR14 [U8] TO-236 (49) 40 V CBO VCES* (V) Min 60 75 V EBO (V) Min 5 I CBO ICES* (nA) Max 20* @ VCB (V) 32 TO-236 (49)

C 547 B

Abstract: c547b c546b TRANSISTOR B 546b transistor C 546b C 546 B C548 free BC557 BC557 C546
Contextual Info: BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V 625 mWatts POWER FEATURES • NPN epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary PNP device:BC556,BC557,BC558 Series • Pb free product :99% Sn above can meet RoHS

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

semikron SKpc 22

Abstract: semikron SKpc semikron SKHI 22 DRIVER IGBT SEMIKRON SKPC semikron SKHI 21 SKHI 21a SKHI 20 molex 41791 skhi-22b semikron SKHI 22A
Contextual Info: SKPC 22/2 SEMIDRIVERTM Printed Circuit Board for SKHI 21A and SKHI 22 A/B drivers SKPC 22/2 Preliminary Data Features • Includes an inverter for driver error signal capability • Able to connect single and paralleled IGBT modules • Same dimensions of SKHI 10

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

Contextual Info: BC 546 . BC 549 NPN Silicon Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert

transistor bc548 bp

Abstract: bc547 transistor bc547 bc547 collector base emitter transistor 548B of transistor BC548 BC548C bc547 marking transistor bc547 transistor
Contextual Info: MCC BC546B BC547A/B/C BC548A/B/C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features NPN Silicon Through Hole Package 150oC Junction Temperature x x •