547C Search Results

transistors 547C

Abstract: 2N6660 JANTX 2N6660 2N6661 Transistor 547c
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 September 2009. MIL-PRF-19500/547C 24 June 2009 SUPERSEDING MIL-PRF-19500/547B 30 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

t1 BC547

Abstract: specifications of BC547B transistor BC547B bc547c fairchild transistor bc547 specifications 547B 547C Bc547B TRANSISTOR BC547A CBVK741B019
Contextual Info: BC547 / BC547A / BC547B / 547C BC547 BC547A BC547B 547C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

S4B-01

Abstract: S5KC20R C 547c S3840 S1ZAK20 S1ZAK40 S1ZAL20 S1ZB20 S1ZB60 S2HB20Z
Contextual Info: - 138- » X m £ [s i # & iË * [S I # tt * B S n % S1 Z A K 2 0 S1 Z A K 4 0 S1ZAL20 S1ZA S4 S1ZB2 0 fr 7 c * t « tc S t® 7 G S1ZB6 0 S2H B20Z S2VB20 S2 V B 6 0 S3 B 4 Q - 0 2 ff« 7 C S3B40-04 S3B40-06 S3B40-08 S3B4 0 - 1 0 S3B4 0-12 •* >; 'J * '

S4B-01

Abstract: F 13000 S3B40-10 S5KC20R s5kc40 S1ZAK20 S1ZAK40 S1ZAL20 S1ZB20 S1ZB60
Contextual Info: - 138- » X m £ [si # & iË * [SI # tt * B S n % Prsm Vr s m kW (V) V H Vr V| (V) (V) Io Tm & (A ) (V ) I fs m I g n t ax Vpmax f o fl o # 11 i B S 1Z A K 2 0 S 1Z A K 4 0 S1ZAL2 0 S1ZAS4 S1ZB20 fr 7 c * t « tc S t® 7 G S1ZB60 S 2H B 2 0 Z S2VB20 S 2V B 6 0

ic 546

Abstract: 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b
Contextual Info: BC 546 . BC 549 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0

Contextual Info: S M A E E S S H S P 5 2 1 5 Digital UpConverter August 1997 Features Description • Output Sample Rates Up to 52 MSPS; Input Data Rates Up to 13 MSPS The HSP50215 Digital UpConverter DUC is a QASK/FM modulator/FDM upconverter designed for high dynamic range applications such as cellular basestations. The DUC

transistor bc548 bp

Abstract: transistor 548c BC546A transistor bc547 applications bc546c bc548 Transistor 547c
Contextual Info: MCC BC546A/B/C BC547A/B/C BC548A/B/C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features NPN Silicon Through Hole Package 150oC Junction Temperature x x

BC547 as amplifiers

Abstract: bc547b BC547A BC547C BC547 C 547c transistors 547C BC547C SEMICONDUCTOR 547A Use of BC547 transistor
Contextual Info: BC547 BC547A BC547B 547C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*

4g32

Abstract: C-163277-78-EE 1-163278-5
Contextual Info: NOTE: D R A W IN G M A D E IN A M ER IC A N P R O JE C T IO N J 28 DlA. HOLE ] jL i è Wr-1 A \ i N TERCGN TACT KEY! NG PLUG C RDE R NC . 1 53282-2 - . CAM BE USED. / 2 \ m A RKIN G IN W HITE ON BOTTOM-SiDE INDICATING ^ T R O W S A-B AND CAVITY NR S. 1 T H R U 18 AND UPWARDS.

c546b

Abstract: c557b of bc 237 b C547B c558b BC 9014 ba W61C c 557b 082BC w61b
Contextual Info: NPN General Purpose Amplifiers & Switches Device No. [Mark] B C W65C [ED ] Case Style TO-236 49 V CEO (V) Min 32 B C X 58 TO-92 (97) 32 BSR14 [U8] TO-236 (49) 40 V CBO VCES* (V) Min 60 75 V EBO (V) Min 5 I CBO ICES* (nA) Max 20* @ VCB (V) 32 TO-236 (49)

C 547 B

Abstract: c547b c546b TRANSISTOR B 546b transistor C 546b C 546 B C548 free BC557 BC557 C546
Contextual Info: BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V 625 mWatts POWER FEATURES • NPN epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary PNP device:BC556,BC557,BC558 Series • Pb free product :99% Sn above can meet RoHS

D0127

Abstract: ultra low drop, high current diode ultra low forward voltage schottky diode sw 6204 sot23 current regulator diode 041 sot-23 Common Anode dual Schottky Rectifier 200MHZ D035 D041
Contextual Info: N T E ELECTRONICS TNC SEE bM BlSST 0GD2b3b Ö51 * N T E D BIOSES ANI T—39—01 NTE Type NO. Material 584 Maximum Peak Reverse Voltage Volts Maximum Average Forward Current (Amps) Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop (Volts)

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Contextual Info: BC 546 . BC 549 NPN Silicon Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert

transistor 548c

Abstract: bc546c C 547c BC546A bc547 npn transistor information 548c bc547 collector base emitter 547c
Contextual Info: MCC BC546A/B/C BC547A/B/C BC548A/B/C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

S4B-01

Abstract: S5KC20 s5kc40 S3B40-08 S3B40-10 S4VB60 S5KC20R S5KC40R S5KD20 S1ZAK20
Contextual Info: - 138- X » m £ [ si # & i Ë * [ SI # t t * B S n % Prsm Vrs m k W (V) V H (V) Vr V| (V) (V) Io Tm & (A) (V ) Ifsm Igntax Vpmax f (V ) (V) I f (A) T(°C) 25L A) Vr (V) o # 11 i T(°C) fr 7 c 200 0. 25 j 1. 2 0. S1ZAK40 * t« tc 400 0. 25 25 j 25L 10

S10FHD08

Abstract: s12kc20 547C S10FFD04 S10FFD06 S10FHD02 S10FHD04 S10FND04 S10FND06 S10FND08
Contextual Info: - £ Prsm Vr s m ktf (V) m 15 [si <f$ & A S m M Vr V| lo (V) (V) (V) (A) V ÎFSM (°C) (A) T <°C) (V) m s ft ft tt z ¡R tn a x V Fm ax 139- I f CA) T(°C) (//A) Vr (V ) T(°C) © # fé m B S10FF D 0 4 S10FF D 0 6 S10FF D 0 8 SIOFFDIO S10F F D 1 2 * ')

S5KC40R

Abstract: S5KC20R S1ZAK20 S1ZAK40 S1ZAL20 S1ZB20 S1ZB60 S2HB20Z S2VB20 S2VB60
Contextual Info: - 138- » X m £ [si # & iË * [SI # tt * B S n % Prsm Vr s m kW (V) V H Vr V| (V) (V) Io Tm & (A ) (V ) I fs m I g n t ax Vpmax f o fl o # 11 i B S 1Z A K 2 0 S 1Z A K 4 0 S1ZAL2 0 S1ZAS4 S1ZB20 fr 7 c * t « tc S t® 7 G S1ZB60 S 2H B 2 0 Z S2VB20 S 2V B 6 0

S4B-01

Abstract: S5KC20 S1ZAK20 S1ZAK40 S1ZAL20 S1ZB20 S1ZB60 S2HB20Z S2VB20 S2VB60
Contextual Info: - 138- » X m £ [si # & iË * [SI # tt * B n S % S1ZAK20 S1ZAK40 S1ZAL20 S1ZAS4 S1ZB20 fr 7 c * t « tc S t ® 7G S1ZB60 S2HB20Z S2VB20 S2VB60 S3B4Q-02 ff« 7 C * ' y S3B40-04 S3B40-06 S3B40-08 S3B40-10 S3B40-12 •* >; 'J * ') * ') * '} P rsm Vrsm kW)

C 547c

Abstract: S10FHD08 S15VB LS 2027 s12kc20 siosc4m 547C S10FFD04 cip 8e S10FHD02
Contextual Info: - A S m S10FF D 0 4 S10FF D 0 6 S10FF D 0 8 SIOFFDIO S10F F D 1 2 £ * * * V Vr V| lo (V) (V) (V) (A) ÎFSM (°C) (A) T <°C) 15 [si <f$ & (V) m s ft ft tt z ¡ R tn a x VFm ax I f CA) T(°C) (//A) V r (V ) T(°C) © # fé m B 10 10 10 10 10 50R 50R 50R

Contextual Info: • bfc,S3S31 DDETTbfl 15b H A P X N AMER PHILIPS/DISCRETE JC546 to 548 b'lE D SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N PN transistors in a plastic TO-92, especially suitable for use in driver stages of audio amplifiers. Q U IC K R E F E R E N C E D A T A

B-547 c

Abstract: TBC548 c547c C548C TBC547 B546B TBC546 TBC548C ic 548 A546A
Contextual Info: SILICON NPN EPITAXIAL TYPE BC546 548 PRIMARILY INTENDED FOR USE IN DIRVER STAGE OF Unit in mm AUDIO AMPLIFIERS. 5.1 MAX. . H i g h V c e o : 65V TBC546 45V (TBC547) 30V (TBC548) . Hi g h hFE 0.4 5 :H0~800 0.5 5 MAX. 0.4 5 . L o w N oise 1.27 1.27 o jn tijji u jo

maxell MSDS

Abstract: 8520-LIBAT Maxell ER/15 automax 547C423 57C413B 57C413 PN-67658 cnc wiring Tadiran Batteries
Contextual Info: Technical Data Replacement Lithium Batteries Catalog Numbers 8520-LIBAT, 57C385 Topic Page Important User Information 2 North American Hazardous Location Approval 3 Storing Lithium Batteries 5 Transporting Lithium Batteries 5 Replacing the 57C385 Battery 8