PNZ108 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108 (PN108) Silicon planar type For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll

Contextual Info: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3-φ0.43±0.05 M Di ain sc te on na tin nc ue e/ d 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use

PN107

Abstract: PN108 PNZ0108 PNZ107 PNZ108
Contextual Info: Phototransistors PNZ107, PNZ108 PN107, PN108 Silicon NPN Phototransistors PNZ107 Unit : mm 4.6 0.15 Glass lens 6.3 0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.)

PN107F

Abstract: PN108F PNZ107F PNZ108F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems

PN107F

Abstract: PN108F PNZ107F PNZ108F Lx 3c paz1
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F φ4.6±0.15 M Di ain sc te on na tin nc ue e/ d 12.7 min. For optical control systems • Features 3° 1. 0± 0.

pnz108cl

Abstract: PN108CL K50010
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type For optical control systems • Features  High sensitivity: IL = 3.5 mA (min.)  Narrow directivity characteristics for effective use of light input

PN108

Abstract: PNZ108
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108 (PN108) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

PN108CL

Abstract: PNZ108CL LX208
Contextual Info: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin • Small size (low in height) package

paz1

Contextual Info: Phototransistors PNZ107F PN107F , PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems • Wide directivity characteristics for easy use

Contextual Info: Phototransistors PNZ107 PN107 , PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.) • Narrow directivity characteristics for effective use of light input

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.)

PNZ108CL

Abstract: 201 photo DSA003716
Contextual Info: Phototransistors PNZ108CL Silicon NPN Phototransistor Unit : mm 3.0±0.3 For optical control systems 12.7 min. 2.0±0.1 0.2±0.05 Features High sensitivity : ICE L = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use 3-ø0.45±0.05 Fast response : tr = 5 µs (typ.)

PNZ107F

Abstract: PNZ108F LX400
Contextual Info: Phototransistors PNZ107F, PNZ108F Silicon NPN Phototransistors Unit : mm PNZ107F ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Wide directional sensitivity for easy use

pnz108cl

Abstract: PN108CL
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

PN107F

Abstract: PN108F PNZ107F PNZ108F
Contextual Info: Phototransistors PNZ107F, PNZ108F PN107F, PN108F Silicon NPN Phototransistors Unit : mm PNZ107F ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Wide directional sensitivity for easy use

PNZ108

Abstract: PN107 PN108 PNZ107
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107), PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F 4.5±0.2 • Features 2.45±0.25 2 0. di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems

phototransistors

Contextual Info: Phototransistors PNZ107, PNZ108 Silicon NPN Phototransistors PNZ107 Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs typ. 12.7 min. High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107), PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.)

PN108CL

Abstract: PNZ108CL
Contextual Info: Phototransistors PNZ108CL PN108CL Silicon NPN Phototransistor Unit : mm 3.0±0.3 For optical control systems 12.7 min. 2.0±0.1 0.2±0.05 Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use 3-ø0.45±0.05

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the