PM4550 Search Results

Contextual Info: PM4550J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain

PM45502C hitachi

Abstract: PM45502C Hitachi DSA00309
Contextual Info: PM45502C Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

Contextual Info: PM4550J Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Sw itching Features • • • • • • • • Equipped with Power M OS FET L ow on-resistance High speed switching Low drive current W ide area o f safe operation Inherent parallel diode between source and drain

PM5050J

Abstract: PM4550J
Contextual Info: PM4550J Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features • • • • • • • • Pin Arrangement Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

Contextual Info: PM45502C Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain

pm4550c

Abstract: PM4550CSILICON
Contextual Info: HIT ACHI/-LOPTOELECTRONICS} 73 4496205 H I T A C H I / OPTOELECTRONICS ' DE I 4 4 ^ 2 0 5 73C 10133 PM4550C-SILICON N-CHANNEL MOS FET MODULE i(7), D T-3^-/5 54Í0.5 54±0.5 D2 HIGH SPEED POWER SW ITCHING S2 DD1G133 D1 X7). SI St§ • FEATURES -sii- •

diode 2JC

Abstract: 4S125
Contextual Info: fcilE T> m 4ltclhEDS DD13t>53 75b « H i m PM4550N- Preliminary HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching

Hitachi DSA001652

Contextual Info: PM4550J Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

0416C

Abstract: PM45502C PM50502C Hitachi DSA0015 PM45502C hitachi
Contextual Info: PM45502C Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

PM45502C

Abstract: HITACHI PM45502C pm4550
Contextual Info: HITACHI PM45502C S IL IC O N N -CH AN N EL P O W E R MOS FET M O D ULE H IG H S P E E D P O W E R S W IT C H IN G • FEATU RES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching • Low Drive Current • Wide Area of Safe Operation

PM45502C

Contextual Info: PM45502C Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Switching Features • • • • • • • • 700 Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

PF0020

Abstract: PM4550C PU7456 TPM relay
Contextual Info: - 162 - f Ü € tt m € & m SS * * H 1 K I* YGS* V * ft M A (V) & * (X P d /P c h (A) * PF0015 H Ä 824— 849MHz PA MOS 12 DD 2 D PF0016 B aL 8 9 0 - 9 1 5 M H z PA MOS 12 DD 2 D PF0017 B aL 872— 905MHz PA MOS 12 DD 2 D PF0020 B aL 820— 850MHz PA

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Contextual Info: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3

2SH14

Abstract: 2SH21 2SH11 2SH19 2SK1056 6AM13 4AK19
Contextual Info: POWER MOS FET •G eneral amplifier Package code Type No. -tas 2SK1197 TO-3P 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 to Ratings Vos* j 10 Vosx (V)| «A) 100 1 0.5 -7 -120 -7 -140 -7 -160 -8 -180 -200 ! -8 Characteristics Mai ResfO» Ciss Status (S itili. <PF)«W>

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

PM5050J

Abstract: Hitachi DSA001652
Contextual Info: PM5050J Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}

"MOSFET Modules"

Abstract: MOSFET Modules power mosfet 500 A PM45502C PM50302F MOSFET 450 1060 fet PM4550J PM4575J PM50100K
Contextual Info: HITACHI 16 1.7 Power MOSFET Modules module type . These devices incorporate high speed source / drain diodes. Hitachi has developed two m odule packages, each incorporating two independent pow er MOSFETs with channel power dissipations of 200W or 300W per FET chip depending on the

2SJ177

Abstract: 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
Contextual Info: Index P-Channel 2SJ Series 2SJ76. 149 2SJ77. 149