PHILIPS ET-E 60 Search Results

2x15

Abstract: PE05 PE05-25 w1a 71 vf312
Contextual Info: PHILIPS PE 05/25 FEHTODE for use as H.F. and L.F. amplifier and os­ cillator P2NTH0DE pour utilisation comme amplifioatrioa H.F. et B.F. et osoillatrioe H.F. und S.P. Verstärker PEIirHCIDE zur Verwendung und Oszillator Cathode : oxide-coated Cathod e : oxyde

BU2508AF

Abstract: transistor fn 155 lem la 100p TRANSISTOR BU2508AF by228 ph transistor A6t 45 700E-15 lem HA BY228 by228 -ph
Contextual Info: N AUER PHILIPS/DIS CR ET E hTE D • bbS3T31 00Efl345 OSD ■ APX Philips Semiconductors_ Product Specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack

SOD106A

Abstract: BZG03 BZG03-C10 BZG03-C270 C100 C110 C120
Contextual Info: N AMER PHILIPS/ DISCR ET E bTE D • ^53^31 DG27G7Ü b?b * A P X Philips Semiconductors Product specification Voltage regulator diodes DESCRIPTION BZG03 series QUICK REFERENCE DATA High reliability glass-passivated diodes in a small rectangular SMD SODIO6A envelope. The envelope

PROXIMITY inductive ic

Abstract: metal detectors IC OM2860 OM3105N OM3105P OM3115N OM3115P
Contextual Info: N AUER P H IL IP S / DI SC R ET E b^E D m bb53T31 D03EB01 BAPX Preliminary specification Philips Semiconductors Hybrid integrated circuits for inductive proximity detectors_ OM31Q5P FEATURES DESCRIPTION • Extra small dimensions 3 x 20 mm max.

uhf tv booster circuit diagram

Abstract: MSA33S
Contextual Info: AMER PHI LI PS /D IS CR ET E b^E » • ^53=131 GG32SSÔ TES « A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2081/60 DESCRIPTION A one-stage wideband amplifier in hybrid integrated circuit form on a thirvfilm substrate. The device is intended for use

BF747

Abstract: MBB400 DB64 transistor HJ 388
Contextual Info: Philips Sem iconductors — bb53^31 00E4bfll l ? 5 N AMER P H IL IPS /D IS CR ET E MAPX b?E Product specification NPN 1 GHz wideband transistor FEATURES £ BF747 PINNING • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.

xl 1225 transistor

Abstract: BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300
Contextual Info: nu. e „ • Philips Semiconductors 1— 1 b 1353131 0024123 21b ■ APX AMER PH IL IP S/D IS CR ET E Product specification L7E D NPN 7 GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

redresseur mercure philips

Abstract: 1749A Scans-0017310
Contextual Info: PHILIPS 1749 A DOtíDLE-AiTODE RECTIFYING VALVE, mercury vaoour and ,^as filled TUBE REDRESSEUR J3IPLAQUE à valeur de mercure et à jaz Z.'/EIAIÍODIGE G-LEICL;líIC;-ÍrERROlí:{E uit Queclcsilberdan 'f— u»id Gasfüllung Application: cinema rectifier 25 A per vaj/^e. maXj36Fbcells

BUK436-100B

Abstract: BUK436-100A
Contextual Info: N AMER PH ILI PS/ DI SCR ET E b*iE D • ^ 53^31 □□3QML0 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

333S

Abstract: MW36-22 equivalente cathode ray schiebe
Contextual Info: PHILIPS MW36-22 TELEVISION CATHODE RAY TUBE with rectangular screen and ion trap TUBS A RAYONS C ATHODIQUES DE TELEV I S I O N avec écran r e c t a n g u l a i r e et t r a p p e à io n s F3RNSEHKATH0DENSTRAHLRÖHRE mit rechteckigem Schirm und Ionenfalle

Contextual Info: N APIER PH IL IP S/ D IS C R ET E b^E D • bbSa^l DD3QSSS 7TM « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

k455

Abstract: BUK455 BUK455-200A BUK455-200B T0220AB
Contextual Info: bTE D N AMER PHI LIP S/ DI SC R ET E • 0D30b50 Ô3D H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Scans-0017251

Abstract: redresseur mercure philips
Contextual Info: PHILIPS 1089 DOUBLE-ANODE RBCTIFYING VALVE, mercury vapour and gas filled TUBE REDRESSEUR BIPLAQUE à vapeur de mercure et à gaz Zï/EIANODIGE GLEICHRICHTERRÖHRE, mit QuecksilberdanpÊund Gasfüllung Application: b a t t e r y Application; Anwendung : c h a r g e r 10 A p e r valve, n a x . 2 0 P b cells

A958

Abstract: Thyratron culot max2580
Contextual Info: PHILIPS THYRATRON, m e r c u r y - v a p o u r an d i n e r t g a s - f i l l e d triode THYRATRON, triode a remplissage de vapeur de mercure et de gaz inerte STROMTORRÖHR.E, Triode mit Quecksirberdampf- und Edelgas­ füllung Application: Motor control, A.C. control and other indus­

BZW86-27

Abstract: BZW86 BZW86-7V5R BZW86-56 BZW86 Series BZW86-7V5 BZW86-9V1 IEC134 DO-30 philips RSM
Contextual Info: TGD D N AMER PHILIPS/ D IS CR ET E • bbS3T31 0GlDb‘i2 b BZW86 SERIES TRANSIENT SUPPRESSOR DIODES A range of diffused silicon diodes in a DO-30 metal envelope intended for use in the p r o ­ tection of the electrical and electronic equipment against voltage transients.

2493 transistor

Abstract: BFG35 BFG55 UBB337
Contextual Info: •I Philips Sem iconductors — ^ 53^131 □ 0 iMfi3 b T T 3 H A P X N A PIER PHI LIP S /D IS C R ET E bVE p Product soeciflcation PNP 4 GHz wideband transistor FEATURES ^ BFG55 PINNING • High output voltage capability PIN • High gain bandwidth product

Contextual Info: bTE ]> N AMER P H IL IP S/ DI SC R ET E • bbS3T31 00 30 4 b 5 Product Specification Philips Semiconductors B U K436-200A/B Pow erM O S transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

PL-150

Abstract: PL150 thyratron
Contextual Info: PL 150 PHILIPS T ir Y H A T R O N , m e r c u r y - v a p o u r a n d g a s - f i l l e d triode TKYBATHCN, tri o d e à v a p e u r de m e r c u r e et à gaz STH0I.IT0RRDH2E, Tri o d e m i t Q u e c k s i l b e r d a m p f - u n d G-asfüllung Application:

4312 020 36640

Abstract: BY206 BLX39 bv-300 carbon resistors
Contextual Info: N AMER PHILIPS /D IS CR ET E t.b53T31 □ OE'ìSTG 653 I IAPX b'IE » A BLX39 H.F./V.H.F. POWER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

BLW90

Abstract: 8-32UNC J188
Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> • bh53131 IAPX D O ET^C Jl BLW 90 U.H.F. P O W E R T R A N S IS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f, range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

bf422 transistor

Abstract: BF420 BF421 BF422 BF423
Contextual Info: b3E D • II bbS3'ì24 OO T M S ? 1! E O T m s i C 3 BF421 BF423 A NAPC/PHILIPS SEUICOND FOR D E T A IL E D IN F O R M A T IO N SEE THE LA TE S T ISSUE OF H A N D B O O K SC04 OR D ATA S H E ET SILICON EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelope prim arily intended fo r class-B video o u tp u t stages in

diathermy

Abstract: KSS 240 oszillator
Contextual Info: TA 4/800 PHILIPS TRIODE f o r u se a s H .F . a m p l i f i e r and o s c i l l a t o r TRIODE p o u r u t i l i s a t i o n comme a m p l i f i c a t r i c e H .F . et o sc illa tr ic e TEIODE z u r Verwendung a l s H F -V e rstä rk e r und O s z i l l a ­

POWER Transformator 50 kv

Abstract: schiebe est 0114 4S66 C107 J5939
Contextual Info: PHILIPS MW 53-20 R E C T A N G U L A R T E L E V I S I O N P I C T U R E T U B E w i t h ion t r a p , f i l t e r glass and metal- b ac k e d screen T U B E I M A G E D E T E L E V I S I O N R E C T A N G U L A I R a v e c trap p e à ions, v e r r e f i l t r e et é c r a n a l u m i n i s é

E92CC

Abstract: 32J7 S 3240 mais
Contextual Info: PHILIPS SQ SPECIAL QUALITY LONG LIFE DOUBLE c ir c u its , DOUBLE TRIODE A HAUTE SECURITE u t i l i s a t i o n d an s d e s c i r c u i t s ZUVERLÄSSIGE DOPPELTRIODE B I T Verwendung i n R ech en m asch in en E92CC TRIODE f o r u se i n computer , ET DE LONGUE DUREE p o u r