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BUK436-100B Abstract: BUK436-100A Contextual Info: N AMER PH ILI PS/ DI SCR ET E b*iE D • ^ 53^31 □□3QML0 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK436-1OOA/B BUK436 -100A -100B 125sJ CJ0304b4 BUK436-100B BUK436-100A	PDF

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BUK436-100B

Abstract: BUK436-100A
Contextual Info: N AMER PH ILI PS/ DI SCR ET E b*iE D • ^ 53^31 □□3QML0 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

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BUK436-1OOA/B BUK436 -100A -100B 125sJ CJ0304b4 BUK436-100B BUK436-100A

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