PARTMARKING AT Search Results

partmarking 5 C

Abstract: ZUMD54 ZUMD54C DSA003730
Contextual Info: SOT323 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ZUMD54 ZUMD54C ISSUE 1– DECEMBER 1998  1 1 3 2 3 ! SINGLE COMMON CATHODE Device Type: ZUMD54 Device Type: ZUMD54C Partmarking Detail: D8 Partmarking Detail: D8C FEATURES: Low VF & High Current Capability

transistor D95

Abstract: ZC2800E ZUMD70-04 ZUMD70-05 DSA003731
Contextual Info: SOT323 SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES ZUMD70-04 ZUMD70-05 ✪ ISSUE 1 - NOVEMBER 1998 .   1 3 2 ! ! SERIES PAIR COMMON CATHODE Device Type: ZUMD70-04 Device Type: ZUMD70-05 Partmarking Detail: D94 Partmarking Detail: D95 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FMMT589 ISSUE 5 - JANUARY 1997_ _ FEATURES * Low equivalent on-resistance; RCE sat 250m£2 at 1A PARTMARKING DETAILS COMPLEMENTARY TYPE- 589 FMMT489 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - JANUARY 1996 FEATURES * FMMTA55 FMMTA56 O_ Gajn of 50 at lc=100mA PARTMARKING DETAIL - FMMTA55 -2H FMMTA56 -2G FMMTA55R - NB FMMTA56R - MB ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

ZVNL120Z

Abstract: DMOSFET
Contextual Info: S0T89 N-CHANNEL ENHANCEMENT MODE VERTICAL D.MOSFET ZVIML120Z PARTMARKING DETAIL: ZVNL120Z - L12 * FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVNL120G DATA SHEET ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Drain-Source Voltage Continuous Drain Current at Ta = 25°C

FMMT3906

Abstract: FMMT3903 FMMT3904 FMMT3905
Contextual Info: SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS FMMT3905 FMMT3906 SWITCHING CHARACTERISTICS at Tamb=25 °C unless otherwise stated PARAMETER SYMBOL FMMT3905 MIN MAX FMMT3906 MIN PARTMARKING DETAILS - FMMT3905 - 2W FMMT3906 - 2A CONDITIONS VCC=-3V, VBE(off)=-0.5V

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER FZT589 HIGH PERFORMANCE TRANSISTOR ISSUE 2 - OCTOBER 1995 - PARTMARKING DETAILS - FZT589 COM PLEMENTARY TYPES - FZT489 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage VALUE

Contextual Info: SOT23 PIMP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - JANUARY 1996 FMMTA55 FMMTA56 O_ FEATURES * Gain o f 50 at lc=100mA PARTMARKING DETAIL - FMMTA55 - 2H FMMTA56 - 2G FMMTA55R - NB FMMTA56R - MB ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

ZBF579

Contextual Info: ZBF569 ZBF579 SOT23 PNP SILICON PLANAR R.F. TRANSISTORS FEATURES. * HIGH fr UP TO 2.4GHz. * LOW NOISE <3.3dB AT 500MHz PARTMARKING DETAILS ZBF569 - F69 ZBF579 - F79 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZBF569 ZBF579 UNIT Collector-Base Voltage VcBO 35

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR o FEATURES * 350 Volt VCE0 * Gain of 15 at lc=-i00m A M, APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE FMMT6517 PARTMARKING DETAIL - 520 SOT23 ABSOLUTE MAXIMUM RATINGS. VALUE

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6

pnp transistor 1000v

Abstract: FMMT558 FMMT458 DSA003671
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT758 ISSUE 2 - FEBRUARY 1995_ FEATURES * 400 Volt VCE0 * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPEFZT658 PARTMARKING DETAILF2T758 ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS I ISSUE 4 - DECEMBER 1996_ COMPLEMENTARY TYPES- FMMTA12 - NONE FMMTA13 - FMMTA63 FMMTA14 - FMMTA64 PARTMARKING DETAILS - FMMTA12 - 3 W FMMTA13 - 1M FMMTA14 - 1N

Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 - MARCH 1995_ ' PARTMARKING DETAIL - FMMTA20 - 1C FMMTA20R - 3C COMPLEMENTARY TYPE FMMTA70 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage

Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FGX591 ISSUE 3 - NOVEMBER 1995_ O_ PARTMARKING DETAILCOMPLEMENTARY TYPE- P1 FCX491 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage VALUE UNIT V CBO

Contextual Info: BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - SEPTEMBER 1995_ FEATURES * Low saturation voltage COMPLEMENTARY TYPE - BCV26 - BCV27 PARTMARKING DETAILS - BCV46 - BCV47 BCV26 - ZFD BCV46-ZFE ABSOLUTE MAXIMUM RATINGS. PARAMETER

FMMT491

Abstract: FMMT591
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM FMMT591 POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES , ! \ I LOW Equivalent on resistance RcE ~a =355mfl at 1A* E c COMPLEMENTARY PARTMARKING TYPE- FMMT491 DETAIL - 591 4BSOLUTE MAXIMUM RATINGS. VALUE SYMBOL PARAMETER Collector-Base

pnp transistor 1000v

Abstract: FMMT558 FMMT458 ZTX558 DSA003698
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6

Contextual Info: FMM T3905 FMM T3906 SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT3905 - 2W FMMT3906 - 2A ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb = 25°C

FMMT589

Abstract: base resistance for SOT23 FMMT449 FMMT489 DSA003695
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT489 ISSUE3 - OCTOBER 1995 ✪ FEATURES * Very low equivalent on-resistance; RCE sat 175mΩ at 1A E C COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMT589 489 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

30ma 40v npn

Abstract: FMMT6517 FMMT6520 DSA003701
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – NOVEMBER 1995 FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA FMMT6517 ✪ E C APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE PARTMARKING DETAIL - B FMMT6520 517

FZT796A

Abstract: FZT696B cal 3200 emitter PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT DSA003717
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT796A 1.0 ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VCEO * Gain of 250 at IC=0.3 Amps * Very low saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT696B PARTMARKING DETAIL FZT796A

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 – MARCH 2001 FEATURES * FMMTA56 ✪ Gain of 50 at IC=100mA E C PARTMARKING DETAIL FMMTA56 - 2G FMMTA56R - MB B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA56 UNIT Collector-Base Voltage