FMMT449 Search Results

Contextual Info: Transistors IC SMD Type Product specification FMMT449 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol

NPN SOT23-6

Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
Contextual Info: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT449 ISSUE 3 - NOVEMBER 1995 FEATURES * Low equivalent on-resistance; RCE sat 250mΩ at 1A 0.8 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – 150 IC/IB=10 0.6 E C FMMT549

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT449 TRANSISTOR NPN SOT–23 FEATURES  Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value

FMMT449

Abstract: ssot3
Contextual Info: FMMT449 FMMT449 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR I FMMT449 ISSU E 3 - NOVEM BER 1995_ FEATURES * Low equivalent on-resistance; RCE sat! 250mii at 1A C O M PLEM EN TARY TYPE PARTMARKING DETAIL - FMMT549 449 ABSOLUTE M A X IM U M RATINGS.

25 V 500mA TRANSISTOR SOT23

Abstract: FMMT449 FMMT549 08 sot23
Contextual Info: FMMT449 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – IC/IB=10 0.4 0.2 0.001 0.01 tr 800 td 0.1 50 ts 400 tf tr 200 td 10 1 ABSOLUTE MAXIMUM RATINGS. 600 0.01 0.1 1 I+ - Collector Current Amps VCE(sat) v IC Switching Speeds

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# FMMT449 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# FMMT449 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates

SSOT-3

Abstract: FMMT449
Contextual Info: FMMT449 F A IR C H IL D S E M IC O N D U C T O R tm FMMT449 B SuperS0T -3 N P N L o w S a tu ra tio n T ra n s is to r These devices are designed with high current gain and low saturatior voltage with collector currents up to 2A continuous. Sourced from Process NB.

transistor marking 2A H

Abstract: npn transistor footprint 449 SOT23 NPN TRANSISTOR BL 100 NPN medium power transistor in a SOT package marking code 1A transistor 2A transistor SOT-23 SOT23 transistor 2A transistor npn 2A sot 23 TRANSISTOR BL 100
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Planar Medium Power Transistor FEATURES z Pb Low equivalent on-resistance,RCE sat : Lead-free 250mΩ at 1A. z FMMT449 Complementary To FMMT549. APPLICATIONS z NPN silicon planar medium power transistor.

25 V 500mA TRANSISTOR SOT23

Abstract: FMMT449 FMMT549 DSA003694
Contextual Info: FMMT449 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – IC/IB=10 0.4 0.2 0.001 0.01 tr 800 td 0.1 50 ts 400 tf tr 200 td 10 1 ABSOLUTE MAXIMUM RATINGS. 600 0.01 0.1 1 I+ - Collector Current Amps VCE(sat) v IC Switching Speeds

Contextual Info: FMMT449 FMMT449 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: FMMT449 F A IR C H IL D SEM IC ONDUCTO R tm FMMT449 B SuperS0T -3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings*

FMMT449

Abstract: SMD TRANSISTOR MARKING 2A TRANSISTOR SMD 1a 9 MARKING 449
Contextual Info: Transistors IC SMD Type Medium Power Transistor FMMT449 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol

ZGF300

Abstract: fmmt555
Contextual Info: SOT23 HIGH PERFORMANCE TRA N SISTO R S NPN Pinout : 1-Collector, 2-Emitter, 3-Base Type FMMT458 FMMT497 FMMT495 FMMT455 FMMT494 FMMT493 FMMT451 FMMT491 FMMT491A FMMT489 FMMT449 hFE v CBO v CEO ^Clcont) Ptot V V mA mW 400 300 170 160 140 120 80 80 40 50 50

Contextual Info: SOT89 NPN SILICON PLANAR M EDIUM POWER TRANSISTOR ISSU E 2 - FEBRUARY 1995_ O FEATURES * High gain and low saturation voltages C O M P L E M E N T A R Y TYPE - BC X69 P A R T M A R K IN G D E T A IL - BC X68 - CE BCX68-16 - C C BCX68-25 - C D ABSOLUTE M A X IM U M RATINGS.

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

BCX68

Abstract: BCX68-16 BCX68-25 BCX69 FMMT449 DSA003675
Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX68 ISSUE 2 – FEBRUARY 1995 ✪ FEATURES * High gain and low saturation voltages C COMPLEMENTARY TYPE – BCX69 PARTMARKING DETAIL – BCX68 – CE BCX68-16 – CC BCX68-25 – CD E C B SOT89 ABSOLUTE MAXIMUM RATINGS.

FMMT449

Abstract: FMMT549 FMMT549A DSA003697
Contextual Info: FMMT549 FMMT549A TYPICAL CHARACTERISTICS ts td,tr,tf ns (ns) 180 0.8 IB1=IB2=IC/10 160 Switching time - (Volts) V 1400 120 IC/IB=100 0.4 IC/IB=10 0.2 ts 100 1200 tr 1000 80 800 td 0.1 1 PARAMETER SYMBOL VALUE UNIT 200 Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage

FMMT589

Abstract: base resistance for SOT23 FMMT449 FMMT489 DSA003695
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT489 ISSUE3 - OCTOBER 1995 ✪ FEATURES * Very low equivalent on-resistance; RCE sat 175mΩ at 1A E C COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMT589 489 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

Contextual Info: SOT223 NPN SILICON PLANAR M EDIU M POWER TRANSISTOR ISSUE 3 - FEBRUARY 1996 O_ FEATURES * Suitable for A F drivers and output stages * High collector current and Low V CE sat C O M P L E M E N T A R Y TY PE - BCP69 P A R T M A R K IN G D E T A IL -

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455