EMITTER Search Results

LG tv tuner unit

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R J TV TUNER, VHF OSCILLATOR APPLICATIONS. *j U n it in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent Collector Power Dissipation

TD62597A

Contextual Info: SILICON M O N O L IT H IC BIPO LAR D IG IT A L IN T EG R A T ED CIRCUIT - TD62593AFNJD62594AFN TD62597AFNJD62598AFN 8ch SINGLE DRIVER : C O M M O N EMITTER Th e TD 62 593, 4, 7, 8 A F N are co m prise d o f e ig h t N PN

Contextual Info: TOS HIB A -CDISCRETE/OPTOi DE | T G ci7aS0 OODflOME ñ Sh ’ :t\ , 90972SO TOSHIBA {DISCRETE/OPTO 2N5039 56C 080^2 _ _ Io “ IC ~ V CE h a VBE COMMON EMITTER T c= 2 5’C 3 - 2 *> .#«• -n * * i —. 4 .« ,• 05 as 'j ai ao5

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS. • High DC Current Gain: MAXIMUM RATINGS Unit in mm hpE=100~320 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 30 V Collector-Emitter Voltage VCEO

75113

Contextual Info: SN55113, SN75113 DUAL DIFFERENTIAL LINE DRIVERS D 1 3 1 5 , SEPTEMBER 1 9 7 3 -R E V lS E D SEPTEMBER 1986 • • • Choice of Open-Collector, Open-Emitter, or 3-State Outputs S N 5 5 1 13 SN 75113 . . J P AC KA G E D, J , OR N PAC KA G E TO P VIE W High-lmpedance Output State for Party-Line

ic 748

Abstract: 2SC4688
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage

Contextual Info: 2SC3547A silicqn npn epitaxial planar type transistor TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • Transition Frequency is High and Dependent on C urrent Excellently. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

transistor BF 451

Abstract: transistor BLC
Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTOR 2 3 Q 4 2 5 1 U nit in mm TV TUNER, VHF O SCILLATO R APPLICATIO NS. M AXIM UM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent

2N5157

Contextual Info: TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR • 100 W at 75° C Case Temperature • 700 V Collector-Emitter Off-State Voltage • Min V BR CEO of 400 V • Max t0ff of 1.7 /is at lc = 1 A • Typ VcE(sat) of 0.3 V at lc = 3.5 A • Typ f r of 5 MHz at 12 V , 0.2 A

GT60M303

Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP.

td62505

Contextual Info: TD62501 P/F#TD62502P/F TD62503P/FfTD62504P/F - TD62505P/FJD62506P/F TD62507P/F s ilic o n m o n o l i t h i c BIPO LAR DIGITAL INTEGRATED CIRCUIT 7 SINGLE DRIVER TD62501, 502, 503, 504P/F : C O M M O N EMITTER TD62505, 506P/F

75113

Contextual Info: • T -7S-4S-07 SN55113, SN75113 DUAL DIFFERENTIAL LINE DRIVERS 6=^1724 □0A223ci 7 « T i m TEXAS INSTR L IN /I N T F C * D 1 3 1 5 , SEPTEMBER 1 9 7 3 -R E V IS E O SEPTEM8ER 1 9 8 6 Choice of Open-Collector, Open-Emitter, or 3-State Outputs SN55113 . . . J PACKAGE

S1377

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE S1377 Unit in ram MEDIUM POWER AMPLIFIER APPLICATIONS. 9.9MAX. 0Z.2±aZ TV HORIZONTAL DRIVER APPLICATIONS. FEATURES: . High Collector to Emitter Breakdown Voltage -• Vcfi0=250V MAXIMUM RATINGS Ta =25°C CHARACTERISTIC SYMBOL

55114

Abstract: 75114 LT 5265
Contextual Info: SN55114, SN75114 DUAL DIFFERENTIAL LINE DRIVERS 0 1 3 1 5 , S E P T E M B E R 1 9 7 3 - R E V IS E D S E P T E M B E R 1986 SN 55114 . J P A CKAG E S N 7 5 1 1 4 . . . D. J , OR N PA CK A G E TOP VIEW Choice of Open-Collector, Open-Emitter, or Totem-Pole Outputs

2sa965

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 U nit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC2235. = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

YTS2222A

Abstract: transistor marking 1p Z
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage

2SC2348

Contextual Info: SILICON NPN PLANAR TYPE TRANSISTOR TV VHF RF AM PLIFIER APPLIC A TIO N S. M A X IM U M U n i t in m m RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation

PHOTO SENSORS

Abstract: fiber optical photo detector LED Reflective Optical Sensor Infrared photosensor OPTICAL INTERRUPTER position infrared detector object detection
Contextual Info: S. Classification of Photo Sensors The Toshiba Photo Sensor is classified as follows: Infrared LED [Emitters Visible LED Photo Transistor Photo sensors• Photo Diode IDetectors Photo 1C : Photo Interrupter ; Compound ; sensors : Photo Reflective Sensor 3. Photosensor Applications

TD62504F

Abstract: TD62506F td62503 td62504 td62505 td62506 TD62 TD62507F td62501 TRANSISTOR bj ez
Contextual Info: TD62501F— TD62507F BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC SINGLE DRIVE TD62501F TD62502F TD62503F TD62504F TD62505F TD62506F TD62507F PACKAGE COMMON EMITTER COMMON EMITTER COMMON EMITTER COMMON EMITTER COMMON COLLECTOR COMMON COLLECTOR ISOLATED

Contextual Info: G T 8 Q 1 2 S M -2 ^ 2 2 ^ HIGH POW ER SW ITCHING APPLICATION S. M O TOR CO N TR O L APPLICATIO N S. M AXIM UM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTICS Collector-Emitter Voltage

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC5052. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO -1 2 0 V Collector-Emitter Voltage VCEO

2SB1016

Abstract: 1C13MAX
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency

GT8G101

Abstract: 072G
Contextual Info: SILICON N CH ANN EL M O S T Y P E GT8G101 Unit in ram ST R O B E FLASH A P P L IC A T IO N S • • • Enhancement-Mode Low Saturation Voltage : V cE sat = 8V (Max.) (@Ic = 130A) 4.3V Gate Drive Collector Gate |fJ 3.0 m. Emitter > 0.75 M A X I M U M R A T IN G S (Ta = 25°C)

transistor G11

Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
Contextual Info: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type