2SB1016 Search Results

2SB1016 Datasheets (20)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SB1016	Wing Shing Computer Components	PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)	Original	PDF	70.3KB	1
2SB1016	Unknown		Scan	PDF	33.69KB	1
2SB1016	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	93.42KB	2
2SB1016	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	40.09KB	1
2SB1016	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	132.03KB	1
2SB1016	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	42.89KB	1
2SB1016	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	76.52KB	1
2SB1016	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	45.09KB	1
2SB1016	Unknown	Cross Reference Datasheet	Scan	PDF	38.59KB	1
2SB1016	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	44.6KB	1
2SB1016	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	63.22KB	1
2SB1016	Toshiba	TO-220 Package Transistors	Scan	PDF	58.21KB	1
2SB1016A	Toshiba	Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Low-Frequency Power Transistor; Part Number: 2SD1407A	Original	PDF	130KB	4
2SB1016(A)	Unknown	Silicon PNP Transistor	Scan	PDF	149.3KB	2

2SB1016A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	42.89KB	1
2SB1016A	Toshiba	Silicon PNP epitaxial type transistor for power amplifier applications	Scan	PDF	170.17KB	3
2SB1016A	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE	Scan	PDF	170.81KB	3
2SB1016-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	76.52KB	1
2SB1016-R	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	76.52KB	1
2SB1016-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	76.52KB	1

2SB1016 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SB1016 Abstract: 1C13MAX Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency	OCR Scan	2sb1016 1c13max -100v 2sd1407 +2q76-cu5 -50ma	PDF
2SD1407 Abstract: 2SB1016 Contextual Info: 2SB1016 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SD1407 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)	Original	2sb1016 sc-67 2sd1407 -150v	PDF
2SB1016 Abstract: 2SD1407 2SB-1016 Contextual Info: SavantIC Semiconductor Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SD1407 APPLICATIONS ·Power amplifier applications PINNING	Original	2sb1016 o-220fa 2sd1407 2sb-1016	PDF
2SD1407 Abstract: 2SB1016A toshiba 2sd1407 2SD1407A Contextual Info: TOSHIBA 2SB1016A TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A Unit in mm High Breakdown Voltage : V q e O = —100V Low Collector-Emitter Saturation Voltage : VCE s a t = -2-0V (Max.) Complementary to 2SD1407A	OCR Scan	2sb1016a --100v 2sd1407a 2sd1407 +1toshiba 2sd1407	PDF
2SB1016A Abstract: 2SD1407A Contextual Info: TO SHIBA 2SD1407A 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PO W ER AM PLIFIER APPLICATIONS • • • High Breakdown Voltage : VCEO“ 100V Low Collector Saturation Voltage : V qe sat = 2.0V (Max.) Complementary to 2SB1016A r 2 '^ "<v>0	OCR Scan	2sd1407a 2sb1016a	PDF
toshiba 2sd1407a Abstract: 2SB1016A 2SD1407A Contextual Info: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A	OCR Scan	2sd1407a 2sb1016a toshiba 2sd1407a	PDF
B1016A Contextual Info: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)	Original	2sb1016a 2sd1407a 2-10r1a b1016a	PDF
2SB1016A Abstract: B1016 B1016A Contextual Info: 2SB1016A 東芝トランジスタシリコンPNP三重拡散形 2SB1016A ○ 電力増幅用単位: mm • 高耐圧です。 • 飽和電圧が小さい。: VCE sat = −2.0 V (最大) : VCEO = 100 V 絶対最大定格 (Tc = 25°C) 項目記号定	Original	2sb1016a 2-10r1a 20070701-ja b1016 +1b1016a	PDF
2SD1407 Abstract: 2SB1016 Contextual Info: Inchange Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SB1016 APPLICATIONS ・Power amplifier applications	Original	2sd1407 o-220fa 2sb1016	PDF
Contextual Info: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE AÍ17A PO W ER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS High. Breakdown Voltage : V£ e o = 100V Low Collector Saturation Voltage : V q e gat = 2.0V (Max.) Complementary to 2SB1016A	OCR Scan	2sd1407a 2sb1016a 10hts	PDF
D1407 Contextual Info: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	2sd1407a 2sb1016a 2-10r1a d1407	PDF
2SB1016A Abstract: toshiba 2sd1407 2SD1407A Contextual Info: 2SB1016A TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A POWER AMPLIFIER APPLICATIONS Unit in mm • High Breakdown Voltage : V q e O = —100V • Low Colleetor-Emitter Saturation Voltage : VCE sat = —2.0V (Max.) • Complementary to 2SD1407A	OCR Scan	2sb1016a --100v 2sd1407a toshiba 2sd1407	PDF
2SD1407 Abstract: 2SB1016 low Vce sat PNP Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0 V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1407 APPLICATIONS ·Designed for audio frequency power amplifier applications.	Original	2sb1016 2sd1407 -100v low vce sat pnp	PDF
ic 746 Abstract: 2sd1407 Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407 POWER AMPLIFIER APPLICATIONS. FEATURES: . High Breakdown Voltage : . Low Collector Saturation Voltage : VcE sat =2.OV(Max.) . Complementary to 2SB1016 . Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage.	OCR Scan	2sd1407 2sb1016 ic 746	PDF

D1407A Abstract: D1407 2SD1407A 2SB1016A Contextual Info: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	2sd1407a 2sb1016a d1407a d1407	PDF
D1407 Abstract: D1407A 2SB1016A 2SD1407A Contextual Info: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	2sd1407a 2sb1016a d1407 d1407a	PDF
D1407A Abstract: D1407 2SD1407A 2SB1016A Contextual Info: 2SD1407A 東芝トランジスタシリコンNPN三重拡散 2SD1407A 通信工業用 ○ 電力増幅用 • 単位: mm : VCEO = 100 V 高耐圧です。 • 飽和電圧が小さい。 : VCE sat = 2.0 V (最大) • 2SB1016A とコンプリメンタリになります。	Original	2sd1407a 2sb1016a 2-10r1a d1407a +1d1407	PDF
2SB1016A Abstract: 2SD1407A Contextual Info: 2SD1407A TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A	OCR Scan	2sd1407a 2sb1016a	PDF
Contextual Info: T O S H IB A 2SB1016A TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A PO W ER AM PLIFIER APPLICATIO NS U n it in m m 10 ±0.3 • High Breakdown Voltage : V q e q = —100V • Low Collector-Emitter Saturation Voltage 2.7±0.2 $ 5 : v C E s a t = - 2'° v (Max.)	OCR Scan	2sb1016a 2sd1407a	PDF
2SD1407 Abstract: 2SB1016 Contextual Info: SavantIC Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SB1016 APPLICATIONS ·Power amplifier applications PINNING	Original	2sd1407 o-220fa 2sb1016	PDF
2SB1016 Abstract: 2SD1407 2sb101 Contextual Info: Inchange Semiconductor Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SD1407 APPLICATIONS ・Power amplifier applications	Original	2sb1016 o-220fa 2sd1407 2sb101	PDF
2SD1407 Abstract: 2SB1016 pnp hfe 120-240 Contextual Info: JMnic Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SD1407 APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION	Original	2sb1016 o-220fa 2sd1407 15llector +2-100v pnp hfe 120-240	PDF
B1016A Abstract: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SD1407A Contextual Info: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Maximum Ratings (Tc = 25°C)	Original	2sb1016a 2sd1407a b1016a toshiba transistor silicon pnp epitaxial type	PDF
2SB1016A Abstract: 2SD1407A B1016A Contextual Info: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications • Unit: mm High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)	Original	2sb1016a 2sd1407a b1016a	PDF

2SB1016 Search Results

2SB1016 Datasheets (20)

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