P1269 Search Results

Contextual Info: InAsSb photovoltaic detector P12691-201 High-speed response and high sensitivity in the 8 m spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required The P12691-201 is an infrared detector that provides high sensitivity in the 8 μm spectral band by employing our unique crystal growth technology and back-illuminated structure and by integrating a lens. The InAsSb photovoltaic detector has a PN

Contextual Info: InAsSb光起電力素子 P12691-201 8 m帯で高速応答・高感度 液体窒素不要の電子冷却型赤外線検出素子 当社独自の結晶成長技術と裏面入射構造を採用してレンズを搭載することにより8 μm帯で高感度を実現した赤外線検出素

BS9733

Abstract: BS9734 P1264 SM transformer P1290 P1260 p1242
Contextual Info: EN ISO9001 DATA BUS TRANSFORMERS www.pascall.co.uk MIL-STD 1553 Data Bus Transformers 3Kohms minimum impedance at -55 ºC BS9000 release available for both leaded and surface mount packages Release to BS9720 Generic Specification full or basic assessment

D4144

Abstract: transistor D1880 D4205 D1294 D1880 D2646 D1268 D2349 D1880 Transistor D1706
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

d1589

Abstract: transistor D1589 D1138 transistor D1650 NEC D1589 d1138 transistor transistor D1138 Transistor D5148 Data D4204 D988
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA827TF HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 u 2SC5179 THIN-TYPE SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) • High gain with low operating current

S12926-05/-05F

Abstract: S12926-05
Contextual Info: [ハマホット] 新製品ニュース Vol. 3 2014 R&D R& R&D Dインタビュー 半導体 半導 体レ レーザ ザに によ よる る樹 樹脂 脂溶 溶着 着と と はん んだ付 だ付け けの の新手 手法 LD L D加 加熱 熱光 光源

d5611

Abstract: NEC d7001 d5611 pin d16803 D1347 d5023 TRANSISTOR D5022 D9328 D1275 D1450
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

asus motherboard circuit diagram

Abstract: SuperSpeed USB 3.0 to Serial ATA Bridge P1263 intel MOTHERBOARD SERVICE MANUAL
Contextual Info: Intel Atom Processor E3800 Product Family Datasheet October 2013 Revision 1.0 Reference Number: 538136 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS

S 9012 H 331 transistor

Abstract: s 9013 c 331 transistor Ic fr 9888 ic 9399 g NEC 14324 UPA827TF S 9013 H 331 transistor NEC 8701 transistor 9013 H NPN IC 7409
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR /¿PA827TF HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD FEATURES • PACKAGE DRAWINGS (Unit: mm) High gain with low operating current

d1047

Abstract: transistor d1047 transistor d5032 d4515 D4206 d4454 Nec D1297 D1047 transistor D4206 transistor d1413 transistor
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 u 2SC5184 THIN-TYPE SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz

Contextual Info: セレクションガイド 2014.12 赤外線検出素子 赤 外 域 の さま ざ ま な 感 度 波 長 範 囲 に 対 応 INFRARED DETECTOR 赤外線検出素子 赤外線検出素子は計測・分析・工業・通信・農業・医 学・理 化 学・天 文 学・宇 宙 などの 分 野に幅 広く利 用

D1650

Abstract: D1138 D1138 transistor transistor D1138 D1589 D4204 transistor D1650 data transistor d1650 Transistor D5148 Data d1650 transistor
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BS9733

Abstract: P1240 P1260 BS9720 P1264 P1243 BS9734 P-1240 mil-t-21038 BS9000
Contextual Info: Pascall's Quality System Is Registered Under BS EN ISO 9001 FM13274 BS EN ISO 9001 Pascall Electronics Ltd, Westridge Business Park, Cothey Way, Ryde, Isle of Wight, PO33 1QT UK POWER PRODUCTS Tel: +44 0 1983 817300 Fax: +44 (0) 1983 564708 MIL-STD 1553

nec 16312

Abstract: ha 13463 SN 16880 8377 om 7082 B ic audio amplifier sn 7456 nec 8039 TRANSISTOR C 5706 9522 transistor fr 3709
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (U nit: mm) Low noise NF = 1 .3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz

D5611 A/B

Abstract: ic 4440 for audio amplification d5611 pe 5571 NEC D73 d5023 TRANSISTOR PPA821TF d5972 2SC4226 D1276
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA821TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 u 2SC4226 THIN-TYPE SMALL MINI MOLD The PPA821TF has 2 built-in low-voltage transistors which are PACKAGE DRAWINGS (Unit: mm)

Infrared detectors

Abstract: dark detector application ,uses and working
Contextual Info: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use

Contextual Info: 赤外線検出素子用アンプ C4159/C5185シリーズ C3757-02 赤外線検出素子 InSb, InAs, InAsSb, InGaAs, MCT, PbS, PbSe 用の低ノイズアンプ 付属品 必要な電源の仕様 取扱説明書 ・C4159シリーズ: ±15 V ± 0.5 ・C5185シリーズ: ±15 V ± 0.5

S12926

Abstract: circuit diagram of a laser lighter
Contextual Info: 2014 01 Compact Instrumentation for Low-Light Detection Cover Story PAGE 2 MPPCs – Multi-Pixel Photon Counters for High Energy Physics Experiments OPTO-SEMICONDUCTOR PRODUCTS PAGE 11 Fingertip size, ultra-compact Micro-Spectrometer ELECTRON TUBE PRODUCTS

transistor d1047

Abstract: transistor d5032 D1047 transistor D4206 D4206 transistor D1047 d4515 d4454 d1413 transistor Nec D1297
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BS9733-F0001-XXXX

Abstract: BS9733 l441 P1264 P1260 BS9734 STANAG-3910
Contextual Info: DATA BUS TRANSFORMERS INPUT MIL-STD 1553 Key Features: BS RELEASE ON SURFACE MOUNT • 3kohms minimum impedance at -55˚C • BS9000 release available for both leaded and surface mount packages • Release to BS9720 Generic Specification full or basic assessment available

p1240

Abstract: STANAG-3910
Contextual Info: M IL-STD 1553 D a ta B u s T r a n s fo rm e rs 3Kohms minimum impedance at -55 °C BS9000 release available for both leaded and surface mount packages Release to BS9720 Generic Specification full or basic assessment available Extended range giving wide choice of

P1264

Abstract: P1269 transformers electronics P1760 P1242
Contextual Info: MIL-STD 1553 DATA BUS TRANSFORMERS ELECTRONICS LIMITED Pascall Electronics Limited Westridge Business Park Cothey Way Ryde, Isle of Wight PO33 1QT UK Tel +44 0 1983 817300 Fax +44 (0) 1983 564708 Email enquiries@pascall.co.uk www.pascall.co.uk 3Kohms minimum impedance at -55 ºC

D1880

Abstract: transistor D1880 d2646 D4205 D4144 d1839 D1880 Transistor D5149 D1294 D2243
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 u 2SC4959 THIN -TYPE SMALL MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low noise and high gain 2.10±0.1

Selection guide

Abstract: Infrared detectors P13243-011MA
Contextual Info: Selection guide - March 2015 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K. Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e ,