D919 Search Results
D919 Price and Stock
Gewiss SpA GWD9198Power breaker; Poles: 4; screw type; Inom: 250A; 690VAC; IP20; MCCB |
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GWD9198 | 1 |
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Gewiss SpA GWD9197Power breaker; Poles: 4; screw type; Inom: 160A; 690VAC; IP20; MCCB |
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GWD9197 | 1 |
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Gewiss SpA GWD9196Power breaker; Poles: 4; screw type; Inom: 125A; 690VAC; IP20; MCCB |
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GWD9196 | 1 |
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Gewiss SpA GWD9195Power breaker; Poles: 4; screw type; Inom: 100A; 690VAC; IP20; MCCB |
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GWD9195 | 1 |
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Gewiss SpA GWD9191Power breaker; Poles: 4; screw type; Inom: 20A; 690VAC; IP20; MCCB |
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GWD9191 | 1 |
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D919 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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"Direct Replacement"
Abstract: D919 DS1003 DS1003-16 DS1003M-16 DS1003M-25 Direct Replacement TEXAS
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d91901ds1003ds1003-16ds1003m-16+6 | |
transistor C9012
Abstract: transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015
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gtv1000an98051tda884xc9029+12 | |
ad918Contextual Info: BUK9MPP-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring |
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buk9mpp-65pllad918 | |
D882, D772
Abstract: d880 y D718 d718* transistor d880 transistor d880 transistor d669 transistor d718 D773 D834 transistor
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enn7160lc75848t3257-tqfp1201/10duty+10 | |
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Contextual Info: VSC6134 Datasheet Features ● ● ● ● ● ● ● ● ● ● Two ITU-T G.709-compliant processors GR253-compliant STS192 section and line processor OTU synchronous and asynchronous mapping 10 GbE transport with RMON MIB per IEEE 802.3 ITU-T G.975 Reed Solomon encoder and decoder |
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vsc6134709-compliantgr253-compliantsts192+5 | |
d880 y
Abstract: D895 D363 D669 d684 D882, D772 D806 D921 D667
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enn7160lc75848t3257-tqfp1201/10duty+9 | |
din 41612 15Contextual Info: 9 NI MV d Q d3H01Sn0 L id0 L o 17 133HS 3dV0S 6d80d9 1H0I3M d ON ON ONIMVdQ NOSd 1NOO S 3dAl O dds l o n a o d d a a v o o a n a 'A ig w assv aio vid ao ad 3WVN dIHdVd 06/6 l/l QddV NM0d9 06/8 l/l 06/8 L/1 'ßjnqs|JJDH ü 3 1 V d0 dd 0 0N I dNV T QddV d99W0N |
OCR Scan |
6s08b9-96b08b9-s6b08b9-b6b08b9-4+4 | |
d478
Abstract: D636 R D476 D669 k d718 D768 D882, D772 d446 d772 D467
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lc75848to2506b8-6221s1s95+12 | |
CD 1691 CBContextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 B1234566789ABBCDEDFDBCBBBBBBBBBBB B BBBBBBBB B BBBBBBBB B B DBF 123314567891A758BCD814E1F3D167D1F1C5A36 DEBFB !DB"##$ 3%&' ! B"##$B 1*+B1CB,FFB&'BDDEDC |
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1234566789abbcdedf123314567891a758bcd814e1f3167d1c75c5+6 | |
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Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 12341564789AB81234156474CDE8 BFFFA89B F819A9 123314567891A758BCD814E1F3D167D1F1C5A36 FA838198 !" #$%&'8 !""82 1*78(B8D8%8FFFB |
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12341564789ab81234156474cde8123314567891a758bcd814e1f3167d11a36ed71+6 | |
CA-78Contextual Info: 1 12345678934AB62A98CDE94F28B32BBD3B8 2341567897ABCD1EAD9F8D11FCD9CF1 2362B28 8 3 236AF87D 28 8 118 !"#$"8 4A8C1 CDF91 1 1 1 1 1DA92A98D%8&24 238'43B884A 8"8D%8 4948B&2298 6EE8'2849D549674EE82A9232 86A8&24 23B84A 8%DD923B 8*E24B28%6EE86A89&28 |
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12345678934ab62a98cde94f28b32bbd3b82341567897abcd1ead9f82362b+7 | |
transistor D919
Abstract: d918 D919 MS-013 SO20 D913
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buk9mpp-65plltransistor d919d918d919+3 | |
e7313Contextual Info: 1 1 1 1 1 2345647891 1 1 1 ABCDEF11A1116141814 !11 5"1#123$AC%B&$1123'9&FB1 1 1 1 18 B!185CD1"D5D#81B 1$42D41%&DC1 1 1 1 45 2 *+1 1 #11"1!111 |
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85cd142d41111111111111111111111111111111abcd1e1861f11111111111111111111111111111abcd1f11861f+7 | |
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Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 D12345678994A5BCDDDDDDDDDDD D D EFD 123314567891A758BCD814E1F3D167D1F1C5A36 3DD99 !"#$%&D99'D 5*+D)#,D1D !"#FDF, 5BA3(-EA5(B. |
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12345678994a5bcddddddddd123314567891a758bcd814e1f3167d112345678994a5bc1+6 | |
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transistor D919Contextual Info: BUK9MPP-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring |
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buk9mpp-65plltransistor d919 | |