NPN TRANSISTOR VCEO 80V 100V HFE 100 Search Results

BDT93

Abstract: BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION •DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96

BDX67

Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier

2N6718

Abstract: 2n6717 2N6716 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718
Contextual Info: 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 High Voltage：VCEO = 100V Gain of 20 @ IC = 0.5A G H Emitter

NTE72

Contextual Info: NTE72 Silicon NPN Transistor High Current Amp, Fast Switch Features: D High Power: 100W @ TC = +50°C, VCE = 40V D High Voltage: VCEO = 80V Min D High Current Saturation Voltage: VCE sat = 1.5V @ 10A D High Frequency: fT = 30MHz Min D Isolated Collector Package, No Isolating hardware Required

NPN Transistor VCEO 80V 100V

Abstract: BSV64
Contextual Info: BSV64 MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • VCBO = 100V • VCEO = 60V

Contextual Info: BSV64 MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCBO = 100V • VCEO = 60V

BCP1898

Contextual Info: BCP1898 1A, 100V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The BCP1898 is designed for switching applications. MARKING 4 1 189 8 2 3 A Date Code E

2sd692

Abstract: hfe 2500 NPN Transistor VCEO 80V 100V 2SD69
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor DESCRIPTION •Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 1000 Min @ IC =1 Adc ·Collector-Emitter Breakdown VoltageV(BR)CEO= 80V(Min) ·Wide Area of Safe Operation

Darlington 40A

Abstract: NPN Transistor VCEO 80V 100V DARLINGTON darlington complementary SILICON COMPLEMENTARY transistors darlington CJD112 CJD117 darlington complementary power amplifier NPN Transistor VCEO 80V 100V hfe 100
Contextual Info: CJD112 NPN CJD117 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching

100MHZ

Abstract: BCP53 BCP53-10 BCP53-16 BCP56 NPN 1A 100V SOT-223
Contextual Info: BCP53 -1A , -100V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   SOT-223 Collector-Emitter Voltage:VCEO= -80V Complementary types: BCP56 NPN A M CLASSIFICATION OF hFE (2)

"Darlington Transistors"

Abstract: CJD112 CJD117 NPN transistor Ic20A NPN Transistor VCEO 80V 100V
Contextual Info: CJD112 NPN CJD117 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package

NPN Transistor 10A 24V

Abstract: NPN Transistor TO220 VCEO 80V 100V POWER TRANSISTOR TO-220 2N6530 2N6533 NPN Transistor VCEO 80V 100V hfe 100 2N6532 2N6531 transistor 5k NPN Transistor TO220 VCEO 50v i 10A
Contextual Info: DATA SHEET 2N6530 2N6531 2N6532 2N6533 NPN POWER TRANSISTOR TO-220 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. MAXIMUM RATINGS: TC=25°C unless otherwise noted

C106V

Abstract: c106 TRANSISTOR c08c C08-C
Contextual Info: -Jfolitron Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR * * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:

NPN Transistor VCEO 80V 100V

Abstract: NTE22
Contextual Info: NTE22 Silicon NPN Transistor AF PO, General Purpose Amp, Driver Features: D High Breakdown Voltage: VCEO = 80V D Large IC Capacity: IC = 1A DC D Good hFE Linearity D Low Collector Saturation Voltage Applications: D Medium Power Output Stages D High–Voltage Drivers

NTE56

Contextual Info: NTE56 Silicon NPN Transistor High Gain Switch and Pass Regulator Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

NPN Transistor 8A

Abstract: TIP102 Darlington transistor
Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107

ztx1049a

Abstract: DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A t1 140 D=t1 tp D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 ra pe D=0.2 m te D=0.5 80 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 1 – JUNE 1995

2SD1292

Contextual Info: ROHM CO L T D ' - MQE D 7 f i 2 f l W O Q O S Ô 4 L 2 • RHM h 7 > y 7 s $ / T ransistors 2SD1292 7 -27-lJ 2SD1292 I fcf £ # v 7 fr y * ^ NPN v y =3 > h 7 > v X £ ^ Ib ^ iilS f f l/M e d iu r n Power Amp, Epitaxial Planar NPN Silicon Transistor • *WB>f&IS/'Dftn6f»sions Unit: mm

NPN Transistor VCEO 80V 100V

Abstract: 2SD1733 NPN Transistor VCEO 80V 100V hfe 100
Contextual Info: Transistors SMD Type Power Transistor 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A DC . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

DARLINGTON 3A 100V npn array

Contextual Info: SILICON NPN/PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 MP4005 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Small Package by Full Molding. (SIP 10 Pin)

Contextual Info: <£e.mi- lonaaakoi \Piodudi, TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN switching transistor BFX85 FEATURES PINNING • High current (max. 1 A) • Low voltage (max. 60 V). PIN 1 2 APPLICATIONS

Contextual Info: TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage

Contextual Info: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

NPN Transistor VCEO 80V 100V

Abstract: NTE2347
Contextual Info: NTE2347 Silicon NPN Transistor General Purpose, Medium Power Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers. Absolute Maximum Ratings: Collector–Base Voltage IE = 0 , VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V