2N5967
Abstract: SDT6436 SDT6437 SDT6438 DSASW0036862
Contextual Info: Device Type 2N5967 SDT6436 SDT6437 SDT6438 VCEO hFE V Min/Max @ IC (A) 100 80 100 120 30/100 40/120 40/120 40/120 15.0 20.0 20.0 20.0 VCE @ IC (A) (sat) Max (V) 1.20 15.0 1.00 20.0 1.00 20.0 1.00 20.0 fT MIN (MHz) PT MAX (W) 10.0 20.0 20.0 20.0 125.0 200.0
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2n5967sdt6436sdt6437sdt6438+1dsasw0036862
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2NS604
Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75
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2n23872n29882n2s892n2990+162n29912n29922n29932n29942n34392n34402ns6042ns5402ns154sd716sdt133052n56712n5005sdt425sdt7605sdt96302
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c107 TRANSISTOR equivalent
Abstract: transistor c107 m TRANSISTOR C107 c106 TRANSISTOR c107 TRANSISTOR
Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC TS 95D 02 8 9 7 DeT| a3t,abOH □□□Eflcì7 fi D 3 3 - ^ 3 f~ Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum
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305mmc-106c-107c107 transistor equivalent+4transistor c107 mtransistor c107c106 transistorc107 transistor
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C106V
Abstract: c106 TRANSISTOR c08c C08-C
Contextual Info: -Jfolitron Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR * * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:
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305mmsdt6436sdt6438c-106+4c106vc106 transistorc08cc08-c
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PT9847
Abstract: ESM752A ESM952 sm2160 ESM952A PT9785 esm752 idd1313
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE fT ON) Min (HZ) Max toN Max (A) (s) 'CBO r (CE)sat Toper Max (Ohms) Max (°C) Package Style ~ Devices 20 Watts or More, (Cont'd) 5 10 PT8854 PT8854A S G S F 6 6 2 (A)
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pt8854pt8854asgsf663esm752+9esm952esm752aesm952abdy57abdy58rpt9847sm2160pt9785idd1313
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c106 TRANSISTOR
Abstract: 800PF SDT6436 C10601 160V 30A TRANSISTOR SDT6438 c106
Contextual Info: -Jfclitron 1?1M [d 1ü) T ©ÄTTÄIL® Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available)
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305mmc106 transistor800pfsdt6436+4c10601160v 30a transistorsdt6438c106
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2N6960
Abstract: TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756
Contextual Info: n? SOLITRON DEVICES 95D 0277 3 INC S0LITR0N DEVICES INC TS D T - 3 3 - O Z D f F | fl3bflbDS 0002773 1 |~ [ ^ m © ^ © M ^ y o © P L A N A R P O W E R T R A N S IS T O R S Devices, Inc. @ 1] MOW? Ic A) *T MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 1.50
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2n65462n6547sdt14411sdt14412+16sdt14413sdt14414sdt144152n62462n6247o-1142n6960to114sdt96302sdt963032n40022n56782n4212n67422n6884sdt8756
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