bc 303 transistor
Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in
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bf433
Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
Contextual Info: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.
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MRF681
bf433
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
baw 92
HP11606A
RF NPN POWER TRANSISTOR 2 WATT 2 GHZ
110T
MRF5812
SF-11N
transistor 81 110 w 63
MRF68
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but16
Contextual Info: MOTOROLA SC ÎXSTRS/R F> 6367254 MOTOROLA SC Tt XSTRS/R DF|b3b72SM 96D F> 80785 □□fl07flS D l~-3 3 -«3e? MOTOROLA BUT16 SEM ICO N D U CTO R TECHNICAL DATA 12 AMPERES SW ITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN SILICON POWER DARLINGTON TRANSISTORS
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b3b72SM
fl07flS
BUT16
but16
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bd 142 transistor
Abstract: bd 109 transistor BD175 BD 139 transistor K1461 BD175.6 BD177 10 watt power transistor bd bd 731 BD179
Contextual Info: Tb M O T O R O L A SC -CXSTRS/R F> 6 3 6 7 2 54 M OT O R O L A SC XSTRS/R DlF|b3b7aS4 96D F MOTOROLA 80559 B D 1 7 5 ,- 6 ,- 1 0 ,- 1 6 SEMICONDUCTOR B D 1 7 7 ,- 6 ,- 1 0 TECHNICAL DATA B D 1 7 9 ,- 6 ,- 1 0 PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3 AM PERE
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gd 361 transistor
Abstract: MOTOROLA 2N3902 2N3902
Contextual Info: MOTOROLA SC X S T R S /R F 15E D | b3b?2S4 QOñ45Q5 b | T - MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3902 3.5 AMPERE HIGH VOLTAGE NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for use in high-voltage inverters, converters, switching
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2N3902
gd 361 transistor
MOTOROLA 2N3902
2N3902
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TRANSISTOR BC 137
Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
Contextual Info: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.
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023SbGS
BC107,
BC1071Â
Q62702-C680
Q60203-X107-A
Q60203-X107-B
Q60203-X108
BC108
Q60203-X108-A
Q60203-X108-B
TRANSISTOR BC 137
TRANSISTOR bc107 current gain
BC107 characteristic
transistor bc 138
transistor BC109
bc 104 npn transistor
XL08
bc109
BC107
Transistor BC107
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BUV 12
Abstract: buv12
Contextual Info: MGTORCLA SC X S T R S /R F 12E O I b3b?554 OQflMflat 0 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.
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MMBR930
Abstract: tc 1150b MRF911 equivalent 1150B motorola g18 MRF911 2N6604 BFR91 MRF914 motorola transistor 0063
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?254 0 0 1 4 1 5 1 3 • MOTb MOTOROLA ■ SEMICONDUCTOR - TECHNICAL DATA P 3 2N6604 Th e R F L in e NF * 2.7 dB « 1 .0 GHz HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for use in high-frequency, low-noise, small-signal,
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DQ141S1
2N6604
Symbo73
MMBR930
tc 1150b
MRF911 equivalent
1150B
motorola g18
MRF911
2N6604
BFR91
MRF914
motorola transistor 0063
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K1118
Abstract: MJ3029 transistor k 1119 transistor K 3532 d 1669 transistor MJ2955 300 watts amplifier MJ2955A he01 Ic as20
Contextual Info: M Q T O R C L A SC XSTRS/R F 12E D | b3 b 7 E 5 4 0084*177 3 | M J2955 — MOTOROLA S e e P g r 3 -6 M J2955A — SEMICONDUCTOR See P g .3 -9 TECHNICAL DATA MJ3029 NPN SILICON HIGH-VOLTAGE TRANSISTOR 5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for T V horizontal and vertical deflection amplifier
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b3b725M
MJ2955-
MJ2955A
MJ3029
K1118
MJ3029
transistor k 1119
transistor K 3532
d 1669 transistor
MJ2955 300 watts amplifier
MJ2955A
he01
Ic as20
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CM2025
Abstract: w65 transistor npn, transistor, sc 109 b T3D 34 BUV11N transistor 3-440
Contextual Info: MOTOROLA SC XSTRS/R F 15E D I b3b?a54 G O û lflâ B 5 I 7 ^ 3 3 MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA NPN SILICON POWER METAL TRANSISTOR . designed for high speed, high current, high power applications. NPN SILICON POWER METAL TRANSISTOR 20 A M P E R E S
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AN415A)
CM2025
w65 transistor
npn, transistor, sc 109 b
T3D 34
BUV11N
transistor 3-440
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c 3198 transistor
Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
Contextual Info: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed
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----2N6384
2N6385
c 3198 transistor
2N6383
IC 6648
2N6648
sc 3198 transistor
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2n5875 motorola
Abstract: 2N5876 2N5878 2N5875 2N5877 2N5875 2N5876
Contextual Info: M O T O R O L A SC XSTRS/R F - 3 3 - 7 3 1 EE D I b 3 b ? 2 5 M Q O Ö M S b S 2 | 1 7 = 3 3 -/3 PNP 2N5875, 2N5876 NPN 2N5877, 2N5878 MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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2N5875,
2N5876
2N5877,
2N5878
2n5875 motorola
2N5878
2N5875
2N5877
2N5875 2N5876
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MS 1117 ADC
Abstract: 1117 ADC TRANSISTOR 2SC 733 BUS51 1117 20 ADC 1117 S Transistor K1119 TRANSISTOR 2SC 635 100-C 25CC
Contextual Info: MOTOROLA SC X S T R S /R iaE D I b3b?25M GoaMaaT T I F MOTOROLA SEM ICONDUCTOR BUS51 TECHNICAL DATA ADVANCED INFORMATION 50 A M PER ES SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR NPN SIUCON POWER TRANSISTOR 200 V O L T S V b r c E O 350 W A T TS The BUS51 transistor is designed for low voltage, high-speed, power
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BUS51
MS 1117 ADC
1117 ADC
TRANSISTOR 2SC 733
1117 20 ADC
1117 S Transistor
K1119
TRANSISTOR 2SC 635
100-C
25CC
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TZ 1167
Abstract: bu208D U/25/20/TN26/15/850/TZ 1167
Contextual Info: MOTOROL A SC XSTRS/R 15E F D I b3b75SM □0ÜM7Tfl 3 | T -3 3 ^ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AM PERES NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAM PER DIO DE NPN SILICON POWER TRANSISTORS . . . specifically designed fo r use in large scree n color d eflection
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b3b75SM
TZ 1167
bu208D
U/25/20/TN26/15/850/TZ 1167
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EM- 546 motor
Abstract: 2N6545 2N6545 Motorola 2N6544
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,
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b3b72S4
2N6545
EM- 546 motor
2N6545 Motorola
2N6544
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TRANSISTOR mj900
Abstract: MJ901 MJ900 mj1001
Contextual Info: m o to ro la sc x s trs /r 12E f D I b3b72S4 0004^73 b | 7 ^3 3 - 3 / r - 3 3 '2 8 PNP MJ900, MJ901 MOTOROLA SEMICONDUCTOR NPN TECHNICAL DATA MJ1000, MJ1001 8.0 AMPERE D A R L IN G TO N POWER TRANSISTO RS C O M PLEM EN TA R Y SILICO N M EDIUM -POW ER C O M PLEM ENTARY
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b3b72S4
MJ900,
MJ901
MJ1000,
MJ1001
MJ900
MJ1000*
MJ901,
MJ1001
TRANSISTOR mj900
MJ901
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transistor j411
Abstract: MJ411 J410 mj411 transistor
Contextual Info: MOTOROLA SC XSTRS/R F H E D | b3b73S>. D O i l - lb ? 0 | / -/ J V J MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O L T A G E NPN SILICON T R AN SISTO R S 5 AM PERE . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.
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b3b73S>
transistor j411
MJ411
J410
mj411 transistor
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MJ8503
Abstract: MJ8502 MJ8504 J8503
Contextual Info: MOTOROLA SC 1EE 0 § b3fc.72S4 O O f l i m ? ^ | XSTRS/R F MOTOROLA MJ8502 MJ8503 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r s Data. S h e e t S .0 A M P ER E N P N SILIC O N PO W ER T R A N S IS T O R S SW ITCH M O D E S ER IES NPN S ILICO N POW ER T R A N SIS T O R S
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MJ8502
MJ8503
Time-25Â
YI45M.
T0-204AA
MJ8504
J8503
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THT bsc 25
Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode
Contextual Info: MOTOROL A SC 1EE D I b3b?aS4 0004050 1 | X S T RS /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-.EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 175 WATTS
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BUT15
THT bsc 25
but15
BM 1313 diode
2SC1020
NT 407 F TRANSISTOR
transistor 3405 npn
SV0200
M70 IBM
sm 0038
3408 diode
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J4032
Abstract: J4033 MOTOROLA MJ4035 J4031 J4030 9BSC MJ4033
Contextual Info: I>F| b3L.725M OOfiGTDD 3 MOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC CX S TR S /R F 96D 8 09 00 T-J3~?3 PNP MOTOROLA MJ4030 MJ4031 MJ4032 SEMICONDUCTOR TECHNICAL DATA MJ4033 MJ4034 MJ4035 16 A M P E R E M ED IUM -POW ER C O M P L E M E N T A R Y S IL IC O N T R A N S IS T O R S
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MJ4030
MJ4031
MJ4032
MJ4033
MJ4034
MJ4035
J4032
J4033
MOTOROLA MJ4035
J4031
J4030
9BSC
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mj11015
Abstract: mj11011
Contextual Info: MOTOROLA SC 12E 0 § b3b?2S4 00ÖS074 T | XSTRS/R F T-33^9 7 ^ 3 3 -3 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP npn' Ml 11011 Ml 11013 MJ11015 Ml 11012 MJ11014 MJ11016 H IG H -C U R R E N T C O M P L E M E N T A R Y S IL IC O N T R A N S IS T O R S 30 A M P E R E
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MJ11015
MJ11014
MJ11016
mj11015
mj11011
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transistor c 3228
Abstract: 2n6546 motorola 2N6546 TD-204AA td204aa
Contextual Info: m o to r o l a sc xstrs/ r 12E D I f t 3 b7 5 S 4 0Gô4b70 T | - MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta S h e e t 15 AMPERE NPN SILICON POWER TRANSISTORS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 300 and 400 VOLTS 175 W ATTS
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diac SBS 14
Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Contextual Info: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation
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MJE2901
Abstract: mje2801 TO-225AB
Contextual Info: MOTOROLA SC 1EE D I XS TRS/R F b 3 b 7 2 5 4 Q0ÛS347 fi | r - 3 3 - ; 3 NPN T - ? 3 -2 1 MOTOROLA MJE2801, MJE2801T SEMICONDUCTOR TECHNICAL DATA PNP MJE2901 10 AMPERE COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS
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MJE2801,
MJE2801T
MJE2901
35-Watts
O-225AB
JWJE2801T
O-220AB
MJE2801/MJE2801T
MJE2901
mje2801
TO-225AB
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