NPN, TRANSISTOR, SC 109 B Search Results

bc 303 transistor

Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in

bf433

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
Contextual Info: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.

gd 361 transistor

Abstract: MOTOROLA 2N3902 2N3902
Contextual Info: MOTOROLA SC X S T R S /R F 15E D | b3b?2S4 QOñ45Q5 b | T - MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3902 3.5 AMPERE HIGH VOLTAGE NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for use in high-voltage inverters, converters, switching

TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
Contextual Info: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.

BUV 12

Abstract: buv12
Contextual Info: MGTORCLA SC X S T R S /R F 12E O I b3b?554 OQflMflat 0 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.

MMBR930

Abstract: tc 1150b MRF911 equivalent 1150B motorola g18 MRF911 2N6604 BFR91 MRF914 motorola transistor 0063
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?254 0 0 1 4 1 5 1 3 • MOTb MOTOROLA ■ SEMICONDUCTOR - TECHNICAL DATA P 3 2N6604 Th e R F L in e NF * 2.7 dB « 1 .0 GHz HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for use in high-frequency, low-noise, small-signal,

c 3198 transistor

Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
Contextual Info: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed

2n5875 motorola

Abstract: 2N5876 2N5878 2N5875 2N5877 2N5875 2N5876
Contextual Info: M O T O R O L A SC XSTRS/R F - 3 3 - 7 3 1 EE D I b 3 b ? 2 5 M Q O Ö M S b S 2 | 1 7 = 3 3 -/3 PNP 2N5875, 2N5876 NPN 2N5877, 2N5878 MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

TZ 1167

Abstract: bu208D U/25/20/TN26/15/850/TZ 1167
Contextual Info: MOTOROL A SC XSTRS/R 15E F D I b3b75SM □0ÜM7Tfl 3 | T -3 3 ^ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AM PERES NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAM PER DIO DE NPN SILICON POWER TRANSISTORS . . . specifically designed fo r use in large scree n color d eflection

bu323

Abstract: bu323a
Contextual Info: M O T O R O L A SC 1EE 0 I XSTRS/R F & | b3fc,7554 0 0 0 4 0 0 0 MOTOROLA SEM ICO N DUCTOR TECHNICAL DATA 16 AMPERE PEAK NPN SILICON POWER DARLINGTON TRANSISTOR The B U 3 2 3 , B U 3 2 3 A are m o no lith ic darlington transistors designed fo r a u to m otive ignition, sw itch in g regulator and m o to r

EM- 546 motor

Abstract: 2N6545 2N6545 Motorola 2N6544
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,

THT bsc 25

Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode
Contextual Info: MOTOROL A SC 1EE D I b3b?aS4 0004050 1 | X S T RS /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-.EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 175 WATTS

J4032

Abstract: J4033 MOTOROLA MJ4035 J4031 J4030 9BSC MJ4033
Contextual Info: I>F| b3L.725M OOfiGTDD 3 MOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC CX S TR S /R F 96D 8 09 00 T-J3~?3 PNP MOTOROLA MJ4030 MJ4031 MJ4032 SEMICONDUCTOR TECHNICAL DATA MJ4033 MJ4034 MJ4035 16 A M P E R E M ED IUM -POW ER C O M P L E M E N T A R Y S IL IC O N T R A N S IS T O R S

transistor c 3228

Abstract: 2n6546 motorola 2N6546 TD-204AA td204aa
Contextual Info: m o to r o l a sc xstrs/ r 12E D I f t 3 b7 5 S 4 0Gô4b70 T | - MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta S h e e t 15 AMPERE NPN SILICON POWER TRANSISTORS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 300 and 400 VOLTS 175 W ATTS

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network

BC327 BC337 noise figure

Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

2N5760

Abstract: 2N5758
Contextual Info: MO T OR OL A SC 12E D | b3b?2S4 -QOflMSbl S I X S TR S/ R F MOTOROLA 7V33-/S' 2N5758 2N5760 SEMICONDUCTOR TECHNICAL DATA HIGH-VOLTAGE HIGH-POWER SILICO N TRANSISTORS 6 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in high power audio amplifier applications and

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

BU206

Abstract: BU205
Contextual Info: Dlf|b3b7S54 □□flObbO T [ATOROLA SC iXSTRS/R F36 3 6 7 2 5 4 , MOTOROLA SC XSTRS/R F 96D 80660 D T - 3 S - MOTOROLA If BU204 BU205 SEMICONDUCTOR TECHNICAL DATA ; ÄiSül ) ( ».*•>i g i i <»i •.*-» *1 > í » t á : i 8 l H H ' t , 2JS AM PERE NPN SILICON

npn pnp transistor bipolar cross reference

Abstract: PN diode pnp low power fast switching transistor high voltage fast switching npn transistor npn, transistor, sc 109 C Field Effect Transistor pnp pn junction diode Solitron Devices pnp, 200 V, 20A
Contextual Info: sjfnlitrnn_ a tm , C H IP D E S C R IP T IO N & P E R F O R M A N C E C U R V E S Devices. Inc. Chip Type Index. .l

Motorola ic

Abstract: 2N6543 300 volt 5 ampere transistor a 31
Contextual Info: MOTORCL A SC XST RS/ R F 12E D I b3b?2SM 00ä4bfc.a 7 | MOTOROLA SEMICONDUCTOR 2N6543 TECHNICAL DATA D e s ig n e r s D a ta . S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS SW ITCHM ODE S E R IE S NPN SIL IC O N POWER T R A N SIST O R S

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

2N5629 MOTOROLA

Abstract: 2N5629 2n6029 2N6030 2N6031
Contextual Info: M O T O R O LA SC XSTRS/R F 1SE D | b3b?aSM MOTOROLA SEMICONDUCTOR TECHNICAL DATA GGÔMSSG □ | r - 33-/0 NPN PNP 2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE . . . designed fo r use in high pow er audio am p lifie r applications and

N415AF

Abstract: BUV24 N415A MKT1822-1.0J250
Contextual Info: MOT OROL A SC lEE D I t3b?aSM QGÖMIOM T | XSTRS/R F T 'ò ì'1 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 A M P E R E S SWITCHMODE* SER IES NPN SILICO N POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . designed for high current, high speed, high power applications.