NI STANDARD SYSTEM ASSURANCE PROGRAM Search Results

185095-02

Contextual Info: Technical Sales 866 531-6285 orders@ni.com Requirements and Compatibility | Ordering Information | Detailed Specifications | Pinouts/Front Panel Connections For user manuals and dimensional drawings, visit the product page resources tab on ni.com. Last Revised: 2014-11-06 07:14:41.0

MXM pin assignment

Abstract: 5962-93247 acolad qml38535 astm d16 qml-38535
Contextual Info: » _ REVISIONS_ _ _ DESCRIPTION IDATE YR-MO-DA ' ] APPROVED REV SHEET REV SHEET 15 16 17 REV STATI s OF SHEETS PMIC M/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE

b6x3

Abstract: X8000 gyro smd ex8000
Contextual Info: Sensing Device Epson Toyocom Product number please contact us Q71800020xxxx00 SENSOR ULTRA MINIATURE SIZE GYRO SENSOR (FOR CAR NAVIGATION SYSTEM) XV - 8000CB •Ultra Small Package size SMD (5 x 3.2 × 1.3 mm) •5.0V operable device (Ratio metric output)

gyro smd

Contextual Info: Sensing Device Epson Toyocom Product number please contact us X2A000011xxxx00 SENSOR MINIATURE SIZE INCLINED GYRO SENSOR (FOR CAR NAVIGATION SYSTEM) XV - 8000LK •Small Package size SMD (6.0 x 4.8 × 3.3 mm) •Inclined angles: 20 degrees •5.0V operable device (Ratio metric output)

x8100

Abstract: gyro smd
Contextual Info: Sensing Device Epson Toyocom Product number please contact us Q71810020xxxx00 SENSOR ULTRA MINIATURE SIZE GYRO SENSOR (For portable GPS, PND applications) XV - 8100CB •Ultra Small Package size SMD(5 x 3.2 × 1.3 mm) •Hermetic sealing provides excellent sustainable

SMD MARKING CODE SEIKO EPSON

Abstract: epson MARKING CODE x3500 epson ex3500 gyro x3500
Contextual Info: Sensor SENSOR ULTRA MINIATURE SIZE VIBRATION GYRO SENSOR angular rate sensor XV - 3500CB • Ultra Small Package size SMD(5 x 3.2 × 1.3 mm) • Hermetic sealing provides excellent sustainable environmental capability • High stability using vibration crystal

Contextual Info: Preliminary W29C022 256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C022 is a 2-megabit, 5-volt only CMOS tlash memory organized as 256K x 8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt

Contextual Info: ADV MICRO b4E MEMORY D • 02S7SEÖ 00321SÖ 7bD ■ Advanced Micro Devices Am27X256 256 Kilobit (32,768 x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed

29C101

Contextual Info: W29C101 vllll-v' Electronics Corp. 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION T h e W 29C 101 is a 1-megabit, 5-volt only C M O S flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt Vpp is

P10-58

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. Unit: mm CM = 108 dB // (TYP.) @ f = 470 MHz, G r = -3 0 dB

xxxxw

Contextual Info: P R E L IM IN A R Y Am27X800 Advanced Micro Devices 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS ExpressROM Device • ±10% power supply tolerance ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed

Contextual Info: Z\ Advanced Micro Devices Am27X2048 2 Megabit 131,072 x 16-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime

cd 1619 CP AUDIO

Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

CDFP2-F10

Abstract: M38510/10101 m38510/11401 GDFP1-F10 E43 marking MIL-STD-883 method 5003 macy1-x8
Contextual Info: INCH-POUND MIL-M-38510/114B 20 August 2003 SUPERSEDING MIL-M-38510/114A 09 November 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON Reactivated after 20 August 2003 and may be used for either new or existing design acquisitions.

DIODE 1N1206A

Abstract: 1n1124r 1N1124A 1N1126A 1N1128A 1N1202A 1N1204A 1N1206A 1N3649 1N3671A
Contextual Info: INCH-POUND MIL-PRF-19500/260F 10 December 1999 SUPERSEDING MIL-PRF-19500/260E 6 August 1999 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A AND AR VERSIONS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

transistor B885

Abstract: 201A072 225A837 B885
Contextual Info: 201A072 225A837 256K x 8 Radiation Hardened Static RAM MCM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

ORCAD PSPICE BOOK

Abstract: CMOS spice model analog devices transistor tutorials Analog Devices MultiSIM Spice AD847 ad817 spice walt Kester vd circuit diagram HINDI op amp model Spice 2g rf transistor spice
Contextual Info: MT-099 TUTORIAL Analog Circuit Simulation ANALOG CIRCUIT SIMULATION INTRODUCTION In recent years there has been much pressure placed on system designers to verify their designs with computer simulations before committing to actual printed circuit board layouts and

Am27C64

Contextual Info: Advanced Micro Devices Am27C64 8,192 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time-55 ns JEDEC-approved pinout ■ Low power consumption: -100 nA maximum standby current ±10% power supply tolerance ■ Programming voltage: 12.75 V ■

nbr 8092-2

Abstract: NFC 93400 114-18022-0 8092-2 essai 1379209-2 tyco 8092-2 114-18022 968037-2 968035-2
Contextual Info: CONNECTEUR 26 VOIES MICRO-TIMER II ET STANDARD-POWERTIMER POUR APPLICATION ABS 26-POSITION MICRO-TIMER II AND STANDARD-POWER-TIMER CONNECTOR FOR ABS APPLICATION Spécification produit 108-15245 15 AVR 04 Rév. D 1. DOMAINE D'APPLICATION 1. SCOPE Cette spécification définit les caractéristiques générales ainsi que les performances électriques et mécaniques du connecteur 26 voies étanche avec contacts

Contextual Info: 8.5" connecting the flow of global resources S ER V IN G T H E P ET R O L EU M AN D C H EM IC A L M A R K ET S • instrumentation cables • power cables • control cables • fiber optic cables FILE NAME: DESCRIPTION: RGI Design, Inc. 2245 Gilbert Avenue

Contextual Info: Decem ber 1994 Semiconductor NM27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV010B is a high performance Low Voltage Elec­ trically Programmable Read Only Memory. It is manufac­ tured using National’s latest 0 .8 ju, C M O S split gate A M G

Contextual Info: SMM5138XZ 12.7 – 15.4GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier • Conversion Gain : -13dB • Input Third Order Intercept IIP3 : +22dBm • LO-RF Isolation : 30dBc

NTC 4,7

Abstract: ntc 4.7 NTC Inrush Current Limiters Thermistor ntc 2.5 ohm Thermistor cross reference IEC 68-2-6 NTC 2.5 UA 741 datasheet NTC 4,7 S M i2 200-5
Contextual Info: NTC Thermistors Inrush current limiters Contents NTC General Characteristics p. 2 NTC as inrush current limiter p. 4 How to order p. 5 Technical data p. 6 Taping characteristics p. 14 Packaging p. 16 Manufacturing process and quality assurance p. 18 Reliability

Contextual Info: Si9160 Vishay Siliconix Controller for RF Power Amplifier Boost Converter FEATURES D High Frequency Switching up to 2 MHz D Optimized Output Drive Current (350 mA) D Standby Mode D Wide Bandwidth Feedback Amplifier D Single-Cell LiIon and Three-cell NiCd or NiMH Operation