SI6801 Search Results
SI6801 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| Si6801DQ | Unknown | Metal oxide N/P-channel field effect transistor enh. | Original | 308.3KB | 4 | ||
| Si6801DQ | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| Si6801DQ | Vishay Intertechnology | N- and P-Channel, Reduced Qg , Fast Switching MOSFET | Original | 97.32KB | 6 | ||
| SI6801DQ-DS | Vishay Telefunken | DS-Spice Model for Si6801DQ | Original | 354.02KB | 4 | ||
| Si6801DQ SPICE Device Model | Vishay | N- and P-Channel Dual Enhancement-Mode MOSFET | Original | 354.02KB | 4 | ||
| SI6801DQ-T1 | Vishay Intertechnology | N- and P-Channel, Reduced Qg , Fast Switching MOSFET | Original | 97.32KB | 6 |
SI6801 Price and Stock
Vishay Siliconix SI6801DQ-T1Trans MOSFET N/P-CH 20V 1.9A/1.7A 8-Pin TSSOP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI6801DQ-T1 | 4,145 | 1 |
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SI6801DQ-T1 | 3,316 |
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| SI6801DQ-T1 | 3,316 |
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| SI6801DQ-T1 | 4 |
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Suzhou Novosense Microelectronics Co Ltd NSI6801ETC-DDBR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NSI6801ETC-DDBR | 29,950 |
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Suzhou Novosense Microelectronics Co Ltd NSI6801EB-DSWFR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NSI6801EB-DSWFR | 6,000 |
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Suzhou Novosense Microelectronics Co Ltd NSI6801EC-DSWFR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NSI6801EC-DSWFR | 4,000 |
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Suzhou Novosense Microelectronics Co Ltd NSI6801LC-DDBR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NSI6801LC-DDBR | 2,315 |
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SI6801 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Si6801DQContextual Info: Si6801DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 D1 S2 TSSOP-8 D1 S1 S1 |
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si6801dqs-47967--rev22-jul-96 | |
Si6801DQContextual Info: Si6801DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 D1 S2 TSSOP-8 D1 S1 S1 |
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si6801dqs-47967--rev22-jul-96 | |
Si6801DQContextual Info: Si6801DQ Dual N- and P-Channel, Reduced Qg, Fast Switching MOSFET Product Summary VDS V N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 D1 S2 TSSOP-8 |
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si6801dqs-49520--rev18-dec-96 | |
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Contextual Info: Si6801DQ Vishay Siliconix N- and P-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 |
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si6801dq08-apr-05 | |
Si6801DQContextual Info: Si6801DQ Vishay Siliconix N- and P-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 |
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si6801dqs-56944--rev23-nov-98 | |
Si6801DQContextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si6801DQ Vishay Siliconix N- and P-Channel Dual Enhancement-Mode MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS |
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si6801dq22-may-04 | |
Si6801DQContextual Info: SPICE Device Model Si6801DQ Vishay Siliconix N- and P-Channel Dual Enhancement-Mode MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si6801dq25-feb-99 | |
Si6801DQ
Abstract: 70187
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si6801dq18-jul-0870187 | |
COILTRONICS 407 241-7876
Abstract: OS-CON 10SA220K 10SA220K C9-C14 alco alco switch sanyo OS-CON SA 4435D DIFS4 SW-DIP-4
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OCR Scan |
9140dbnf/25nf/10v40-pin+15 | |
LS4148
Abstract: Si9160 TSSOP-16
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OCR Scan |
si9160si6801s-5462210-nov-97+2 | |
593D
Abstract: 595D 6TPA150M LTC1773 LTC1773EMS MS10 Si9801DY TOKO D104C LR1206-01-R068 CDRH6D28-3RO
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ltc1773550khzltc1771ltc1772+12 | |
LTDB msop
Abstract: LTC1622 1N4818 d03316-472 ltdb MBRS120LT3 IR10BQ015 LTC1622CMS8 LTC1622CS8 LTC1622IS8
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ltc1622550khz750khzltc1627/ltc1707+13 | |
ltdbContextual Info: LTC1622 Low Input Voltage Current Mode Step-Down DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO High Efficiency Constant Frequency 550kHz Operation VIN Range: 2V to 10V Multiampere Output Currents OPTI-LOOPTM Compensation Minimizes COUT |
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ltc1622550khz750khzltc1627/ltc1707+5 | |
LTMVContextual Info: LTC1773 Synchronous Step-Down DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 1773 is a current mode synchronous buck regulator controller that drives external complementary power MOSFETs using a fixed frequency architecture. The operating supply range is from 2.65V to 8.5V, making it |
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ltc1773550khz250maltc1877+4 | |
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6542
Abstract: AN805 LS4148 Si6542DQ Si6552DQ Si6801DQ Si9160 si9145 siliconix an805
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an8056542ls4148si6542dq+5 | |
LS4148
Abstract: Si9160 Si9160BQ-T1 TSSOP-16 MLC110 P-CHANNEL POWER MOSFET
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Original |
si9160si6801s-40700--rev19-apr-04+5 | |
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Contextual Info: Si9161 Vishay Siliconix Si9161 Optimized-Efficiency Controller for RF Power Amplifier Boost Converter FEATURES • Si9160 architecture optimized for “light-load” efficiency • High Frequency Switching up to 2 MHz • Optimized Output Drive Current (300 mA) |
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si9161si9160si680111-mar-11 | |
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Contextual Info: Si9160 Controller for RF Power Amplifier Boost Converter Features D Wide Bandwidth Feedback Amplifier D Single-Cell LiIon and Three-cell NiCd or NiMH Operation D High Frequency Switching up to 2 MHz D Optimized Output Drive Current (350 mA) D Standby Mode |
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si9160si6801s-54622--rev10-nov-97 | |
MBRM120T3
Abstract: 68uF 10V SANYO 47pF 50V NPO CR16-3162FM SILICONIX Si9801DY MMSD914T1 EEFUEOG181R BD 1206 CR16-303JM r025
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si9801si6801mbrm120t3ltc1773ms10+11 | |
mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
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Original |
2n7000irf7203fds9435a2n7002+14 | |
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Contextual Info: Tem ic SÎ9160DB S c m i c o n d il f I o r s Si9160 Demonstration Board Features • • • • Synchronous Boost Converter with Efficiency up to 93^ 1-MHz Switching Frequency Operates with Input Voltages of 3.0 V to 5 V 5-V Output at 0 A to 1.0 A Description |
OCR Scan |
9160dbsi9160si6801ls4148+3 | |
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Contextual Info: Tem ic SÌ9160 S e m i c o n d u c t o r s Controller for RF Power Amplifier Boost Converter Features • High Frequency Switching up to 2 MHz • Optimized Output Drive Current (350 mA) • Standby Mode • Wide Bandwidth Feedback Amplifier • Single-Cell Lilon and Three-cell NiCd or NiMH Operation |
OCR Scan |
si9160si6801 | |
IR10BQ015
Abstract: LTC1622 LTC1622CMS8 LTC1622CS8 LTC1622IS8 Si3443DV 6TPA47M LTDB msop MBR320T3 SANYO SS 1001
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ltc1622550khz750khzltc1627/ltc1707+13 | |
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Contextual Info: Si9160 Vishay Siliconix Controller for RF Power Amplifier Boost Converter FEATURES D High Frequency Switching up to 2 MHz D Optimized Output Drive Current (350 mA) D Standby Mode D Wide Bandwidth Feedback Amplifier D Single-Cell LiIon and Three-cell NiCd or NiMH Operation |
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si9160si68012011/65/eu2002/95/ec+1 | |