SI6552DQ Search Results

Si6552DQ

Contextual Info: Si6552DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –12 rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 D1 S2 TSSOP-8 D1 S1 S1 G1

S-03419

Abstract: Si6552DQ
Contextual Info: Si6552DQ Vishay Siliconix Dual N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = - 4.5 V "2.5 0.18 @ VGS = - 2.5 V "1.9 20 P Channel P-Channel - 12 D1 S2 TSSOP-8

S-49534

Abstract: Si6552DQ
Contextual Info: Si6552DQ Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 20 P-Channel –12 rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 D1 S2 TSSOP-8 D1 S1 S1 G1 1

Contextual Info: Si6552DQ Vishay Siliconix Dual N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = - 4.5 V "2.5 0.18 @ VGS = - 2.5 V "1.9 20 P Channel P-Channel - 12 D1 S2 TSSOP-8

SI6552DQ

Contextual Info: Si6552DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = -4.5 V "2.5 0.18 @ VGS = -2.5 V "1.9 20 P-Channel -12 D1 S2 TSSOP-8 D1 1 S1 2

S-49534

Abstract: Si6552DQ
Contextual Info: Si6552DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 20 P-Channel –12 D1 S2 TSSOP-8 8 D2

SI6552DQ

Contextual Info: Si6552DQ Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 20 P Channel P-Channel –12 12 rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 D1 S2 TSSOP-8 D1

MOSFET TSSOP-8 dual n-channel

Abstract: n-channel mosfet transistor p channel mosfet vds max -20v, id max -5.5A Si6552DQ
Contextual Info: Si6552DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –12 rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 D1 S2 TSSOP-8 D1 S1 S1 G1

Si6552DQ

Contextual Info: Si6552DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –12 rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 D1 S2 TSSOP-8 D1 S1 S1 G1

Si6552DQ

Contextual Info: Si6552DQ Siliconix Dual EnhancementĆMode MOSFET NĆ and PĆ Channel Product Summary VDS (V) NĆChannel 20 PĆChannel -12 rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = -4.5 V "2.5 0.18 @ VGS = -2.5 V "1.9 D1 S2 TSSOPĆ8 D1

Si6552DQ

Contextual Info: Si6552DQ Vishay Siliconix Dual N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = - 4.5 V "2.5 0.18 @ VGS = - 2.5 V "1.9 20 P Channel P-Channel - 12 D1 S2 TSSOP-8

Contextual Info: Si6552DQ Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 20 P-Channel –12 rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 D1 S2 TSSOP-8 D1 S1 S1 G1 1

6542

Abstract: AN805 LS4148 Si6542DQ Si6552DQ Si6801DQ Si9160 si9145 siliconix an805
Contextual Info: AN805 PWM Optimized Power MOSFETs for Low-Voltage DC/DC Conversion Andrew Cowell Designers of low-voltage dc-to-dc converters have two main concerns: reducing size and reducing losses. As a way of reducing size, designers are increasing switching frequencies. But the result has been reduced converter

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Si6552DQ

Abstract: Si9529DY Si9928DY si9928 Si952
Contextual Info: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V

70649

Abstract: analysis of PWM converters using model of PWM switch AN805 LS4148 Si6542DQ Si6552DQ Si6801DQ Si9160
Contextual Info: AN805 Vishay Siliconix PWM Optimized Power MOSFETs for Low-Voltage DC/DC Conversion Designers of low-voltage dc-to-dc converters have two main concerns: reducing size and reducing losses. As a way of reducing size, designers are increasing switching frequencies. But the result

Si6552DQ

Abstract: Si9529DY Si9928DY
Contextual Info: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

Contextual Info: SÌ9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V d s (V ) N-Channel 20 P-Channel I d (A ) fDS(on) ( ß ) -2 0 0.05 @ VGS = 4.5 V ± 5 .0 0.06 @ VGs = 3.0 V ± 4 .2 0.08 @ VGs = 2.7 V ± 3 .6 0.11 @ VGs = -4 -5 V ± 3 .4 0.15 @ V GS = - 3 .0 V

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone