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Ultrasonic cleaner

Abstract: GUNS traco power Traco Electronic AG 1000cfm
Contextual Info: Traco Electronic AG Jenatschstrasse 1 CH-8002 Zürich Switzerland Tel: Fax: Email: URL: +41 43 311 4545 +41 43 311 4545 techsupport@traco.ch www.tracopower.com TON 15-xxxx and TON 15-xxxxWI Cleaning and Drying I. Cleaning Agents Cleaning Method Ultrasonic Wave

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Abstract: 13873
Contextual Info: SHEET 1 OF 1 9 .9 0 + 0 .2 w m xxxxw j RECOMMENDED P.C.B. lAYOU -2 .5 4 TYP. 6 8 BACK VIEW 10 12 14 16 18 20 21 22 •, 9. •, 9, J J J J J11J13*J15J J J21*JJ l 9 3* 5 * 7* 9* • • Î7 * £\3* CIRCUIT NOTES: 1. ALL DIMENSIONS IN MM 2. GENERAL TOLERANCE: X .X = ± 0 .4

Contextual Info: XXX COLOR 001 BLACK HALOGEN FREE 88134-XXXX-TRP W01 BLACK 88134-XXXXW-TRP CKT Dim A 10 2.0 14 3.0 16 3.5 20 4.5 24 5.5 30 7.0 34 8.0 36 8.5 40 9.5 50 12.0 60 14.5 70 17.0 80 19.5 PACKING Dim B 7.1 8.1 8.6 9.6 10.6 12.1 13.1 13.6 14.6 17.1 19.6 22.1 24.6 Dim C

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Contextual Info: P R E L IM IN A R Y Am27X800 Advanced Micro Devices 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS ExpressROM Device • ±10% power supply tolerance ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed

Contextual Info: a Am28F020A Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current

Contextual Info: 128K X 36, 256K X 18, 3.3V SYNCHRONOUS SRAMS WITH 2.5V I/O OPTION, FLOW-THROUGH OUTPUTS, BURST COUNTER, SINGLE CYCLE DESELECT i :$*&&* 4« *»»« tK fc « * 'S * * * * ; 4ÎK «« ^ iL j; PRELIMINARY IDT71V2577 IDT71V2579 IDT71V3577 IDT71V3579 FE A TU R E S :

M24C01

Abstract: M24C02 M24C04 M24C08 M24C16 STMicroelectronics marking code date M24C02 MLP8 2x3mm
Contextual Info: M24C16, M24C08 M24C04, M24C02, M24C01 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I²C Bus EEPROM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ Two Wire I2C Serial Interface Supports 400kHz Protocol Single Supply Voltage: – 4.5 to 5.5V for M24Cxx

HM534251BZ-8

Contextual Info: HM534251B Series 262144-word x 4-bit Multiport CMOS Video RAM HITACHI Description The HM534251B is a 1-Mbit multiport video RAM equipped with a 256-kword x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial access memory . Its RAM and SAM operate independently and

1D1010

Abstract: 1D10101
Contextual Info: FINAL COM’L: -10/12/15/20 IND: -14/18/24 Z I Advanced Micro Devices M A C H 2 2 0 - 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 48 Outputs ■ 96 Macrocells ■ 96 Flip-flops; 4 clock choices ■ 10 ns tpD

Contextual Info: m EDI9F33256C a l256Kx32 SRAM Module fiEC W O U C 0E96N& NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­

OAOLP2

Abstract: temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645
Contextual Info: MCS@51 MICROCONTROLLER FAMILY USER’S MANUAL ORDER NO.: 272383-002 FEBRUARY 1994 Intel Corporation makes no warrsnfy for the uee of ite products and assumes no responsibility for any ewors which may appear in this document nor does it make a commitment to update the information contained herein.

LT 3852

Abstract: X2816C X2816CI c 3852 Scans-00120002
Contextual Info: « K X 2Ô 16C 16K 2048 X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Tim e • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

Contextual Info: APPLICABLE FPC RECOMMENDED DIM. THICKNESS: 0 .3 ± 0 ^ 3 88513-X X X X-XX A±o.i □ (BLANK) 10 20 30 W01 W02 WO3 1 . 0 ± 0.05 0.2 Circuit No.1 i \ TT'TI'I HOUSING M M ACTUATOR / LOGO MARK r il/ 7. NO OF CKT- y t PACKING-0: TAPE Sc REEL

M24Cxx-Lxx6

Abstract: M24Cxx M24C01 M24C02 M24C04 M24C08 M24C16 F6SP36
Contextual Info: M24C16, M24C08 M24C04, M24C02, M24C01 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I²C Bus EEPROM FEATURES SUMMARY 2 • Two Wire I C Serial Interface Supports 400 kHz Protocol ■ Figure 1. Packages Single Supply Voltage: – 4.5V to 5.5V for M24Cxx – 2.5V to 5.5V for M24Cxx-W

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Abstract: CSD25301W1015
Contextual Info: P-Channel CICLON NexFET Power MOSFETs CSD25301W1015 Product Summary Features • Ultra Low Qg & Qgd D D • Small Footprint S S • RoHS Compliant nC 0.32 nC VGS= -1.5V 175 mΩ VGS=-2.5V 80 mΩ VGS=-4.5V 62 mΩ Vth Top View Level Package V 2.0 RDS on

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Contextual Info: £D HARRIS H M - 6 5 6 4 2 /8 8 3 8K x 8 Asynchronous CMOS Static RAM June 1989 Features D escrip tio n • This Circuit is Processed in Accordance to M il-S td 88 3 and is Fully Conform ant Under th e Provisions of Paragraph 1.2.1. The H M -6 564 2/88 3 is a CMOS 8192 x 8 -b it Static

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Contextual Info: COM’L PAL16RA8 Advanced Micro Devices 20-pin Asynchronous TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • 30 ns maxim um propagation delay and 20 MHz TTL-level register preload for testability f MAX Easy design w ith PA LA SM software ■

5650300

Abstract: XXXW
Contextual Info: QED RISCMark RM5231™ 64-Bit Superscalar Microprocessor FEATURES: • Pinout com p atib le w ith po pu lar R M 5230 w ith split po w e r s u p ­ plies 2.5V and 3.3V • Dual Issue su p e rsca la r m icro p ro ce sso r - can issue one integer and one floa ting -point in stru ction pe r cycle

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Contextual Info: MOTOROLA O rder th is docum ent by MCM67J618A/D SEMICONDUCTOR TECHNICAL DATA MCM67J618A Product Preview 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Registered Outputs The M CM67J618A is a 1,179,648 bit synchronous static random access

EF802

Abstract: pf30n Nec mr31
Contextual Info: Preliminary Data Sheet March 1998 microelectronics group Lucent Technologies Bell Labs Innovations LU3X54FT QUAD-FET Fast Ethernet Transceiver for 10Base-T/100Base-TX/FX Features 100 Mbits/s FX Transceiver 10 Mbits/s Transceiver • Compatible with /EEE802.3U 100Base-FX stan­

CP2101SETIDS

Abstract: AN144SW AN144 AN-144 Silabs CP2101
Contextual Info: AN144 CP2101 C U S T O M I Z A T I O N G U I D E Relevant Devices This application note applies to the following devices: CP2101 1. Introduction This document is intended for developers creating products based on the CP2101 USB to UART Bridge Controller. It provides information about obtaining a Vendor ID VID and Product ID (PID) for a CP2101 product. It also

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The /¿PD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

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Abstract: xxxxw DS5230 RM5230 MIPS RM5230
Contextual Info: QED RISCMark RM5230™ 64-Bit Superscalar Microprocessor FEATURES: • Dual Issue superscalar microprocessor - can issue one integer and one floating-point instruction per cycle — 100, 133, 150 and 175 MHz operating frequencies — 228 Dhrystone2.1 MIPS

Contextual Info: Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 nA maximum standby current