NAND FLASH HET Search Results

TC5816BDC

Contextual Info: TOSHIBA TENTATIVE TC5816BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 M bit NAND Electrically E rasable and Program m able Read Only Memory (NAND Flash EEPROM) w ith spare 64 K X 8 bits. The device is organized as 264 bytes

b8331

Contextual Info: KM29V32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - vo lt Supply The K M 29V 32000T S /R S is a 4 M 4,19 4 ,3 0 4 x8 bit N AND • Organization Flash m em ory w ith a spare 128K (131,072)x8 bit. Its NAND

Contextual Info: T O S H IB A TENTATIVE TC5816BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E^PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 bytes

Contextual Info: KM29W32000T, KM29W32000IT FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final 1.1 Data Sheet, 1999 April 10th 1999

Contextual Info: KM29W32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final 1.1 Data Sheet, 1999 April 10th 1999 Final

Contextual Info: Preliminary FLASH MEMORY KM29U64000T, KM29U64000IT 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Voltage Supply : 2.7V ~ 3.6V • Organization - Memory Cell Array : 8M ♦ 256K bit x 8bit - Data Register : (512 + 16)bit x8b# • Automatic Program and Erase

Contextual Info: IN TEG RA TED TO SHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816 AFT SILICON GATE CMOS 16 MBIT 2 M x 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only

Contextual Info: PRELIMINARY KM29V16000ATS/RS 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM 29V 16000A T S /R S is a 2 M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (6 5 ,5 3 6 )x8 bit.

Contextual Info: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The K M 29N 16000AT/R is a 2M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (65,536)x8 bit. Its N AND

Contextual Info: KM29W040AT, KM29W040AIT FLASH MEMORY Document TitSe 512K x 8 bit NAND Flash Memory Revision History R evisio n No. H isto ry D raft Date R em ark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed O perating Voltage 2.7V ~ 5.5V —> 3.0V ~ 5.5V

KM29du

Contextual Info: Advanced Information FLASH MEMORY KM29DU256T, KM29DU256IT 32M X 8 Bit NAND Flash Memory R evisio n No. H isto ry 0.0 Initial issue. D raft Date R em ark Nov. 26th 1998 Advanced Information Changed specifications from 128Mb to 256Mb ITEM KM 29U128T/IT Nop 10 cycles

Contextual Info: KM29W32000ATS FLASH MEMORY Document Tifie 4M X 8 Bit NAND Flash Memory Revision HSsiorv Revision No. History Draft Date Remark Advanced Information Final 0.0 Initial issue. April 10th 1998 0.1 Data Sheet, 1999 April 10th 1999 1 Added CE dont care m ode during the data-loading and reading

Contextual Info: KM29W32000AT, KM29W32000AIT FLASH MEMORY Document Tifie 4M X 8 Bit NAND Flash Memory Revision HSsiorv Revision No. History Draft Date Remark Advanced Information Final 0.0 Initial issue. April 10th 1998 0.1 Data Sheet, 1999 April 10th 1999 1 Added CE dont care m ode during the data-loading and reading

41RB

Contextual Info: IN TEG RA TED TOSHIBA CIRCUIT TECHNICAL DATA TO SH IBA M O S DIGITAL INTEGRATED CIRCUIT TC5816 AFT SILICON GATE CM O S 16 M BIT 2 M x 8 BITS CM O S NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only

Contextual Info: KM29N16000ET/R FLASH MEMORY 2M X 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The K M 29N 16000E T/R is a 2M (2,09 7 ,1 5 2 )x8 b it N AND • W ide Tem perature O peration : -25'C - +85'C

03f hall

Contextual Info: KM29V32000T, KM29V32000IT FLASH MEMORY Document Xiflo 4M x 8 bit NAND Flash Memory Revision History Revision No. H istory Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBERS p a ra m e te r: 5m s Typ. —> 2m s(Typ.) 2. Removed reverse type package.

KM29U256T

Abstract: KM29U256 29U256
Contextual Info: KM29U256T, KM29U256IT Advanced Information FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. 0.0 History DraftDate Remark Initial issue. April.10th 1999 Advanced Information The attached datasheets are prepared and approved by S AM SU N G Electronics. S AM SU N G Electronics CO., LTD. reserve the right

EM 319

Abstract: em319 GD5434
Contextual Info: KM29V32000T/R FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply T he KM 29V 32000T /R is a 4 M 4 ,19 4 ,3 0 4 x8 b it N AND • O rganization Flash m e m ory w ith a sp are 1 2 8 K (1 3 1,0 72 )x8 bit. - M em ory Cell Array

KM29N16000A

Abstract: DD2423 KM29N16000ATS
Contextual Info: PRELIM INARY FLASH M EM ORY KM 29N16000ATS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM 29N 16000A TS /R S is a 2 M 2,09 7 ,1 5 2 x8 b it N AND • O rganization Flash m em ory w ith a spare 6 4K (6 5 ,5 3 6 )x8 bit. Its N AND

JESD218

Contextual Info: Intel Solid-State Drive DC S3700 Product Specification  Capacity: 2.5-inch : 100/200/400/800 GB 1.8-inch : 200/400 GB  Components: − Intel® 25nm NAND Flash Memory − High Endurance Technology HET Multi-Level Cell (MLC)  Form Factor: 2.5- and 1.8-inch

Contextual Info: KM29N16000ETS/RS FLASH MEMORY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt S upply T h e K M 2 9 N 1 6 0 0 0 E T S /R S is a 2 M (2 ,0 9 7 ,1 5 2 )x 8 b it • W ide Tem perature O peration : -25'C - +85'C

Contextual Info: TO SH IBA TC5816BDC TENTATIVE T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILIC O N G A T E C M O S 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E^PROM DESCRIPTION T he TC5816 device is a single 5.0-volt 16 M bit NAND E lectrically E rasable an d P rogram m able R ead

Contextual Info: TM September 2013 • Vybrid Controller F Series Summary − Target applications − Differentiating − Product − Use details cases − Enablement • features and partner solutions 2D-ACE Graphics Deep Dive if time permits TM 2 Kinetis Microcontrollers

Contextual Info: System On Module RainboW-G16M-µMXM Vybrid µMXM Module The RainboW-G16M-µMXM SOM is based on Freescale's Vybrid VF6xx/VF5xx family solution combining ARM Cortex-A5 and Cortex-M4 cores, which often eliminate the need for an external MCU for real time control applications.