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VPG Foil Resistors


VPG Foil Resistors Y11892K32000TR1R High Precision Resistor Metal Foil 2.32kOhm 0.01% T/R - Tape and Reel (Alt: Y11892K32000TR1R)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	Y11892K32000TR1R	Tape & Reel		25 Weeks	25	1 - 10 - 100 $19.39 1000 $16.94 10000 $16.94	Buy Now
VPG Foil Resistors Y15082K32000TR0L Resistor Metal Foil 2.32kOhm 0.01% Bulk - Bulk (Alt: Y15082K32000TR0L)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	Y15082K32000TR0L	Bulk		25 Weeks	25	1 - 10 - 100 $16.98 1000 $15.23 10000 $15.23	Buy Now
VPG Foil Resistors Y40224K32000T9W Ultra High-Precision Resistor Metal Foil 4.32kOhm 0.01% Waffle Pack - Waffle Pack (Alt: Y40224K32000T9W)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	Y40224K32000T9W	Waffle Pack			100	1 - 10 - 100 $13.67 1000 $8.15 10000 $7.96	Buy Now
VPG Foil Resistors Y40252K32000T0W Ultra High-Precision Resistor Metal Foil 2.32kOhm 0.01% Waffle Pack - Waffle Pack (Alt: Y40252K32000T0W)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	Y40252K32000T0W	Waffle Pack			100	1 - 10 - 100 $15.65 1000 $10.00 10000 $9.78	Buy Now
VPG Foil Resistors Y40252K32000T5R Res Ultra High Precision Metal Foil 2010 2.32k Ohm 0.01% 1/2W ?0.2ppm/?C Molded T/R - Tape and Reel (Alt: Y40252K32000T5R)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	Y40252K32000T5R	Tape & Reel			10	1 - 10 $59.44 100 $41.50 1000 $38.38 10000 $38.38	Buy Now

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32000T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
b8331 Contextual Info: 32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - vo lt Supply The K M 29V 32000T S /R S is a 4 M 4,19 4 ,3 0 4 x8 bit N AND • Organization Flash m em ory w ith a spare 128K (131,072)x8 bit. Its NAND	OCR Scan	km29v32000ts/rs 250us 32000t b8331	PDF
EM 319 Abstract: em319 GD5434 Contextual Info: 32000T/R FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply T he KM 29V 32000T /R is a 4 M 4 ,19 4 ,3 0 4 x8 b it N AND • O rganization Flash m e m ory w ith a sp are 1 2 8 K (1 3 1,0 72 )x8 bit. - M em ory Cell Array	OCR Scan	km29v32000t/r 250us \256byte bh14h +3em 319 em319 gd5434	PDF
Contextual Info: FUJITSU SEMICONDUCTOR CM25-10150-2E CONTROLLER MANUAL F2MCTM-8L 8-bit Microcontroller MB89210 Series Hardware Manual F2MCTM-8L 8-bit Microcontroller MB89210 Series Hardware Manual FUJITSU LIMITED Preface • Purpose of this document and intended reader We sincerely thank you for your continued use of Fujitsu semiconductor products.	Original	cm25-10150-2e mb89210	PDF
CO2V Contextual Info: MEMORY !Cs FLASH MEMORY A list of Errata for 1996 Flash Memory Databook February 1996 SAMSF002 * co > 2 V NVM Product Planning Team M emory Business Sam sung Electronics Co. 82-2-760-6067 ELfCTRONICS FLASH MEMORY MEMORY ICs T he fo llow ing tables replaced co rre sp o n ding ones In the 1996 Flash M em ory D atabook	OCR Scan	samsf002 km29n040t km29v040t a18/19 +4528-byte 250us 32000t/r co2v	PDF
Contextual Info: 32000T, KM29W32000IT FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final 1.1 Data Sheet, 1999 April 10th 1999	OCR Scan	km29w32000t km29w32000it	PDF
Contextual Info: KM29 32000T Flash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte	OCR Scan	v32000t 250us km29v32000t 003ia	PDF
Contextual Info: FLASH MEMORY 32000T, KM29W32000IT 4M X 8 Bit NAND Flash Mem ory History D raft Date R e m a rk 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final Revision No. The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right	OCR Scan	km29w32000t km29w32000it km29v32000 km29n32000 +1km29w32000	PDF
se617 Abstract: vhdl code for 74192 UPD65891 a1387 transistor F495 transistor f422 equivalent tt 2246 Transistor TT 2246 transistor f422 UPD65883 Contextual Info: Design Manual CMOS-N5 Series CMOS Gate Array Ver. 7.0 Document No. A13826EJ7V0DM00 7th edition Date Published March 2004 N CP(K) c Printed in Japan [MEMO] 2 Design Manual A13826EJ7V0DM NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the	Original	a13826ej7v0dm00 a13826ej7v0dm se617 vhdl code for 74192 +8upd65891 a1387 transistor f495 transistor f422 equivalent tt 2246 transistor tt 2246 transistor f422 upd65883	PDF
Contextual Info: 32000T, KM29W32000IT FLASH MEMORY Document Title 4M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right	OCR Scan	km29w32000t km29w32000it 29v32000 km29n32000 +1km29w32000	PDF