KM29V32000T Search Results

Contextual Info: KM29V32000TS FLASH MEMORY Document Tills 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.

KM29V32000TS

Contextual Info: KM29V32000TS ELECTRONICS Fl as h 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

Contextual Info: KM29V32000T, KM29V32000IT FLASH MEMORY Document Title 4M X 8 bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.

b8331

Contextual Info: KM29V32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - vo lt Supply The K M 29V 32000T S /R S is a 4 M 4,19 4 ,3 0 4 x8 bit N AND • Organization Flash m em ory w ith a spare 128K (131,072)x8 bit. Its NAND

EM 319

Abstract: em319 GD5434
Contextual Info: KM29V32000T/R FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply T he KM 29V 32000T /R is a 4 M 4 ,19 4 ,3 0 4 x8 b it N AND • O rganization Flash m e m ory w ith a sp are 1 2 8 K (1 3 1,0 72 )x8 bit. - M em ory Cell Array

Contextual Info: KM29V32000T/R FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V32000T/R is a 4M 4,194,304 x8 bit NAND • Organization Flash memory with a spare 128K(131,072)x8 bit. - Memory Cell Array : (4M +128K)bit x 8bit

KM29N32000

Abstract: KM29V32000IT KM29V32000T scheme electronics
Contextual Info: KM29V32000T, KM29V32000IT FLASH MEMORY Document Title 4M X 8 bit NAND Flash Memory Revision History Revision No. H istory Draft Date o.o Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.

03f hall

Contextual Info: KM29V32000T, KM29V32000IT FLASH MEMORY Document Xiflo 4M x 8 bit NAND Flash Memory Revision History Revision No. H istory Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBERS p a ra m e te r: 5m s Typ. —> 2m s(Typ.) 2. Removed reverse type package.

D0243

Contextual Info: FLASH MEMORY KM29V32000TS/RS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Celi Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

Z359

Abstract: rb414 7-it4142
Contextual Info: KM 29V 3 2 00 0 T S Flash ELEC TRO NIC S 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K Dit x 8bit The KM29V32000TS/RS is a 4M(4,194,304)xB bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND

Contextual Info: KM29V32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.) 2. Removed reverse type package.

KM29N32000

Abstract: KM29V32000TS
Contextual Info: KM29V32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.) 2. Removed reverse type package.

KM29N32000

Abstract: KM29V32000IT KM29V32000T KM29W32000
Contextual Info: KM29V32000T, KM29V32000IT FLASH MEMORY Document Title 4M x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.) 2. Removed reverse type package.

KM29N16000TS

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction 2. Product Guide 3. Ordering information II. 4M FLASH MEMORY 1. KM29N040T 5.0V / 512K x8 bit 17 2. KM29V040T 3.3V / 512K x8 bit 36 57 16M FLASH MEMORY IV. V. 1. KM29N16000T7R 5.0V / 2M 2. KM29N16000TS/RS

511ML

Abstract: 243L3 tsop 338 IR
Contextual Info: FLASH M EM ORY KM 29V32000TS/RS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4 M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 1S)Byte

Contextual Info: MEM ORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density 4M bit Org. rower Supply 512Kx 8 5V ±10% 3.3V±10% 16M bit 2M x 8 5V ±10% Part Number KM29N040T Features Package 32B Page Mode 4K B Block size 44 40 T S O P II tR C = 120ns = 20us tRC=80ns 256B Page Mode

TSOP 48 Package nand memory

Abstract: NAND flash memory nor flash 1Mx16 flash TSOP I KM29N040T KM28U800
Contextual Info: 1. INTRODUCTION <NOR FLASH MEMORY> <NAND FLASH MEMORY> 2. PRODUCT GUIDE < NOR FLASH MEMORY > Density Org. Supply 2.7V-3.6V 8M bit 16M bit Part Number KM28U800 Features 2Mx8 1Mx16 4.5V-5.5V KM28N800 55/70/90 2.7V-3.6V KM28U160 80/90/120ns Package Standard Temp.

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 12

Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density 4M bit Org. Power Supply 512KX 3 5V±10% Part Number KM29N040T Speed Features Package = 32B Page Mode 4KB Block size 44 40 TSOP II 256B Page Mode 4KB Block size 44(40) TSOP II tR 15US tR C = 1 2 0 n s 3.3V±10%