N-CHANNEL MOSFET Search Results

sot-363 n-channel mosfet

Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Contextual Info: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel

FDML7610S

Contextual Info: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A

Contextual Info: FDMS7700S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.4 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A

Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

c151A

Abstract: FDMS3602S
Contextual Info: Preliminary Datasheet FDMS3602S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 2.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A

FDS8858CZ

Abstract: fds8858
Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's

FDS8858

Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s

FDD8424

Contextual Info: FDD8424H_F085 Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: FDD8426H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power ̈ Max rDS on = 12 mΩ at VGS = 10 V, ID = 12 A

Contextual Info: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance

MOSFET P-channel SOT-23

Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
Contextual Info: Central CMPDM3590 N-CH CMPDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM3590 and CMPDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

marking code R

Abstract: MARKING CODE W
Contextual Info: Central CMBDM3590 N-CH CMBDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBDM3590 and CMBDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

CMUDM7590

Abstract: on semiconductor marking code sot CMUDM3590
Contextual Info: Central CMUDM3590 N-CH CMUDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM3590 and CMUDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

Contextual Info: FDS4897AC Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel MOSFETs are produced using ̈ Max rDS on = 26 mΩ at VGS = 10 V, ID = 6.1 A

si3529

Abstract: Si3529DV SI3529DV-T1-E3
Contextual Info: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V

Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested

p channel de mosfet

Abstract: list of P channel power mosfet Si4567DY si4567
Contextual Info: Si4567DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.060 @ VGS = 10 V 5.0 0.070 @ VGS = 4.5 V 4.7 0.085 @ VGS = –10 V –4.4 0.122 @ VGS = –4.5 V –3.7

Transistor Mosfet N-Ch 30V

Abstract: STS7C4F30L
Contextual Info: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω

Si4569DY

Contextual Info: Si4569DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 0.029 at VGS = –10 V –6.0 0.039 at VGS = –4.5 V

FDMQ8203

Contextual Info: FDMQ8203 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ Features General Description Q1/Q4: N-Channel This quad mosfet solution provides ten-fold improvement in

C3j marking

Abstract: CMLDM7003 CMLDM7003J code c3j sot transistor pinout "MARKING CODE C3*" n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR sot 26 Dual N-Channel MOSFET marking c3j c30 C3J
Contextual Info: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel

1351D

Abstract: FDPC8011S FDPC8011
Contextual Info: PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel General Description „ Max rDS on = 7.3 mΩ at VGS = 4.5 V, ID = 12 A This device includes two specialized N-Channel MOSFETs in a Q2: N-Channel dual package. The switch node has been internally connected to

mosfet vgs 5v

Abstract: mosfet vgs 5v SOT23 MOSFET 2KV MOSFET SOT-23 C7003 VGS-12V MARKING CODE 24 TRANSISTOR mosfet low vgs MARKING CODE 16 transistor sot23 10mhz mosfet
Contextual Info: CMPDM7003 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7003 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed