N-CHANNEL MOSFET Search Results

N-CHANNEL MOSFET Result Highlights (5)

Part	Manufacturer	Description	Download
TK5R1A08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS	Datasheet
TK155E65Z	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ	Datasheet
TK090U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL	Datasheet
TK5R3E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB	Datasheet
TK065U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL	Datasheet

N-CHANNEL MOSFET Price and Stock

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Nexperia BST82,215 MOSFETs SOT23 100V .19A N-CH FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	BST82,215	Reel	297,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.07	Buy Now
ROHM Semiconductor RUE002N02TL MOSFETs Sm Signal, Sw MOSFET N Chan, 20V, 0.2A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	RUE002N02TL	Reel	180,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.07	Buy Now
ROHM Semiconductor RV1C002UNT2CL MOSFETs Nch Small Signal MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	RV1C002UNT2CL	Reel	104,000		8,000	1 - 10 - 100 - 1000 - 10000 $0.04	Buy Now
ROHM Semiconductor RTR020N05TL MOSFETs SINGLE N-CHAN 45V 2A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	RTR020N05TL	Reel	66,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.30	Buy Now
ROHM Semiconductor RYM002N05T2CL MOSFETs .9V DRIVE N-Ch MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	RYM002N05T2CL	Reel	32,000		8,000	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now

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N-CHANNEL MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
nchannel Abstract: DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel Contextual Info: Chapter 8 – Depletion Mode MOSFETs DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 N-Channel; 300V; 12Ω N-Channel; 350V; 25Ω N-Channel; 400V; 25Ω N-Channel; 240V; 4Ω N-Channel; 400V; 6.0Ω N-Channel; 500V; 1.0KΩ N-Channel; 500V; 1.0KΩ	Original	DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 nchannel DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel	PDF
CMLDM7005 Abstract: Power MOSFET p-Channel n-channel dual CMLDM8005 TR Contextual Info: Product Brief CMLDM7005 Dual, N-Channel CMLDM8005 (Dual, P-Channel) CMLDM7585 (N & P-Channel) SOT-563 20V, 650mA Dual, Complementary MOSFETs in the miniature SOT-563 package N-Channel P-Channel N & P-Channel Typical Electrical Characteristics Central Semiconductor’s CMLDM7005 (Dual, N-Channel),	Original	CMLDM7005 CMLDM8005 CMLDM7585 650mA OT-563 OT-563 CMLDM7005 Power MOSFET p-Channel n-channel dual CMLDM8005 TR	PDF
CMRDM Series Abstract: PB CMRDM Series CMRDM CMRDM3590 Contextual Info: Product Brief CMRDM3590 20V, 160mA N-Channel CMRDM7590 (20V, 140mA P-Channel) CMRDM3575 (20V, N-Channel & P-Channel) Dual, MOSFETs in the SOT-963 package SOT-963 Typical Electrical Characteristics Central Semiconductor’s CMRDM3590 (N-Channel), CMRDM7590	Original	CMRDM3590 160mA CMRDM7590 140mA CMRDM3575 OT-963 OT-963 CMRDM Series PB CMRDM Series CMRDM CMRDM3590	PDF
Contextual Info: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V	Original	Si4824DY Si4824DY-T1 08-Apr-05	PDF
BTA 16 6008 Abstract: bta 06 400 v BTA 06 600 T application note BTA 600 Si4824DY Si4824DY-T1 Contextual Info: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V	Original	Si4824DY Si4824DY-T1 S-31726--Rev. 18-Aug-03 BTA 16 6008 bta 06 400 v BTA 06 600 T application note BTA 600	PDF
Si4824DY Abstract: Si4824DY-T1 Contextual Info: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V	Original	Si4824DY Si4824DY-T1 18-Jul-08	PDF
sot-363 n-channel mosfet Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575 Contextual Info: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel	Original	CMKDM3590 CMKDM7590 CMKDM3575 OT-363 CMKDM3590: CMKDM7590: CMKDM3575: RATI150 CMKDM7590 sot-363 n-channel mosfet sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 Dual P-Channel mosfet sot-363 SOT-363 marking th	PDF
FDMS7700S Abstract: 501B 8 P mosfet 9630 Contextual Info: FDMS7700S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.4 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A	Original	FDMS7700S FDMS7700S 501B 8 P mosfet 9630	PDF
FDMS7600AS Abstract: 501B 8 P Contextual Info: FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A	Original	FDMS7600AS FDMS7600AS 501B 8 P	PDF
FDML7610S Contextual Info: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A	Original	FDML7610S FDML7610S	PDF
FDML7610S Abstract: C3028 561b Contextual Info: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A	Original	FDML7610S FDML7610S C3028 561b	PDF
RTJC Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s	Original	FDD8424H FDD8424H RTJC	PDF
Contextual Info: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A	Original	FDML7610S	PDF
Contextual Info: FDMS7700S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.4 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A	Original	FDMS7700S	PDF

FDMJ1032C Abstract: marking 032 SC-75 Dual N & P-Channel Contextual Info: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement	Original	FDMJ1032C FDMJ1032C marking 032 SC-75 Dual N & P-Channel	PDF
FDMS3604S Abstract: 501B 8 P 231B DIODE Contextual Info: Preliminary Datasheet FDMS3604S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 6.8 mΩ N-Channel: 30 V, 40 A, 2.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 6.8 mΩ at VGS = 10 V, ID = 13 A	Original	FDMS3604S FDMS3604S 501B 8 P 231B DIODE	PDF
Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s	Original	FDD8424H	PDF
Contextual Info: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's	Original	FDS8958B com/dwg/M0/M08A	PDF
rfp14n05 Abstract: N-Channel Enhancement-Mode 25AF Contextual Info: — POWER MOSFETs 3 N-CHANNEL POWER MOSFETs PAGE N-CHANNEL POWER MOSFET DATA SHEETS 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power M OSFETs. 3-3 RFD14N06, RFD14N06SM, RFP14N06 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power M OSFETs.	OCR Scan	RFD14N05, RFD14N05SM, RFP14N05 RFD14N06, RFD14N06SM, RFP14N06 RFD16N05, RFD16N05SM RFD16N06, RFD16N06SM N-Channel Enhancement-Mode 25AF	PDF
FDD3510H Contextual Info: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s	Original	FDD3510H FDD3510H	PDF
FDS8958B Abstract: CQ238 Contextual Info: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's	Original	FDS8958B FDS8958B CQ238	PDF
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s	Original	FDS8858CZ FDS8858CZ N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V	PDF
c151A Abstract: FDMS3602S Contextual Info: Preliminary Datasheet FDMS3602S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 2.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A	Original	FDMS3602S c151A FDMS3602S	PDF
FDS8858CZ Abstract: fds8858 Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s	Original	FDS8858CZ FDS8858CZ fds8858	PDF

N-CHANNEL MOSFET Search Results

N-CHANNEL MOSFET Result Highlights (5)

N-CHANNEL MOSFET Price and Stock

Nexperia BST82,215

ROHM Semiconductor RUE002N02TL

ROHM Semiconductor RV1C002UNT2CL

ROHM Semiconductor RTR020N05TL

ROHM Semiconductor RYM002N05T2CL

N-CHANNEL MOSFET Datasheets Context Search

nchannel

CMLDM7005

CMRDM Series

BTA 16 6008

Si4824DY

sot-363 n-channel mosfet

FDMS7700S

FDMS7600AS

FDML7610S

FDML7610S

RTJC

FDMJ1032C

FDMS3604S

rfp14n05

FDD3510H

FDS8958B

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

c151A

FDS8858CZ