SI4824DY Search Results

Si4824DY

Contextual Info: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V N-Channel 1 30 N-Channel 2 rDS(on) (W) ID (A) 0.040 @ VGS = 10 V "4.7 0.065 @ VGS = 4.5 V "3.7 0.0175 @ VGS = 10 V "9 0.027 @ VGS = 4.5 V "7.3 D1 D2 D2 D2

BTA 16 6008

Abstract: bta 06 400 v BTA 06 600 T application note BTA 600 Si4824DY Si4824DY-T1
Contextual Info: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V

Contextual Info: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V

Si4824DY

Abstract: 2.5 V Drive Nch MOSFET
Contextual Info: SPICE Device Model Si4824DY Vishay Siliconix Asymmetrical Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4824DY

Abstract: Si4824DY-T1
Contextual Info: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V

47AB

Abstract: Si4824DY
Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4824DY Vishay Siliconix Asymmetrical Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS

2.5 V Drive Nch MOSFET

Abstract: Nch Nch MOSFET Si4824DY
Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4824DY Vishay Siliconix Asymmetrical Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

Contextual Info: _ SÎ4824DY Vishay Siliconix Asymmetric N-Ch, Reduced Qg, Fast Switching MOSFET o l PRODUCT SUMM ARY I d A f l DS(ON) Vos W N-Channel 1 0.040 VGS= 10 V •±4.7 0.065 @ VGS = 4.5 V ±3 .7 30 0.0175 @ VGS= 10 V ±9 0.027 @ VGS = 4.5 V

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

fqp60n06

Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Contextual Info: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL