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    FDMS3604S Datasheets (1)

    ON Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMS3604S
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 30V 13A/23A 8-PQFN Original PDF 657.94KB
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    FDMS3604S Price and Stock

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    onsemi FDMS3604S

    Trans MOSFET N-CH Si 30V 13A/23A 8-Pin PQFN EP T/R
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    Verical () FDMS3604S 418,730 406
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    FDMS3604S 1,831 406
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    Avnet Americas () FDMS3604S Tape & Reel 3,000
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    FDMS3604S Tape & Reel 20 Weeks 3,000
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    Mouser Electronics FDMS3604S
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    Onlinecomponents.com FDMS3604S
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    Rochester Electronics FDMS3604S 420,561 1
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    TME FDMS3604S 1
    • 1 $1.89
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    Avnet Silica FDMS3604S 21 Weeks 3,000
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    EBV Elektronik FDMS3604S 22 Weeks 3,000
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    Flip Electronics FDMS3604S 1,035
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    Fairchild Semiconductor Corporation FDMS3604S

    Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
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    Rochester Electronics FDMS3604S 364 1
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    FDMS3604S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDMS3604S

    Abstract: 501B 8 P 231B DIODE
    Contextual Info: Preliminary Datasheet FDMS3604S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 6.8 mΩ N-Channel: 30 V, 40 A, 2.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 6.8 mΩ at VGS = 10 V, ID = 13 A


    Original     		FDMS3604S FDMS3604S 501B 8 P 231B DIODE PDF

    Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		PDF