N-CHANNEL ENHANCEMENT 200V 60A Search Results

1E14

Abstract: 2E12 FRL230R4 JANSR2N7275
Contextual Info: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

MIL-S-19500

Abstract: mosfet 60a 200v 100v 23A P-Channel MOSFET FRF250R4 N-channel enhancement 200V 60A 1E14 2E12 JANSR2N7294
Contextual Info: JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 23A, 200V, rDS ON = 0.115Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

100v 23A P-Channel MOSFET

Abstract: 1E14 2E12 FRF250R4 JANSR2N7294
Contextual Info: JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 23A, 200V, rDS ON = 0.115Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

FRL230

Abstract: 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230
Contextual Info: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

Contextual Info: JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 23A, 200V, rDS ON = 0.115Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

Contextual Info: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.500Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

IXFH60N20F

Abstract: IXFT60N20F
Contextual Info: Advance Technical Information IXFH60N20F IXFT60N20F HiPerRFTM Power MOSFET VDSS ID25 RDS on trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 60A Ω 38mΩ 200ns TO-247 Symbol Test Conditions

Contextual Info: Advance Technical Information HiPerRFTM Power MOSFET VDSS ID25 IXFH60N20F IXFT60N20F RDS on trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 60A Ω 38mΩ 200ns TO-247 Symbol Test Conditions

IXTH60N20L2 Linear Power MOSFET

Abstract: ixth60n20 60n20 IXTT60N20L2 IXTH60N20L2
Contextual Info: Advance Technical Information IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 200V = 60A ≤ 45mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 = 200V = 60A ≤ 45mΩ Ω RDS on TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab Symbol Test Conditions Maximum Ratings

Contextual Info: IXFR120N20 HiPerFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   200V 105A  19.5m 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS

IXFB210N20P

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB210N20P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 210A Ω 10.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings

60n20

Abstract: 60N20T IXTQ60N20T IXTA60N20T IXTP60N20T ixta 60N20T
Contextual Info: Preliminary Technical Information IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions

IXFR230N20T

Contextual Info: IXFR230N20T GigaMOSTM Power MOSFET VDSS ID25 = = 200V 156A  8.0m 200ns RDS on   trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS VDGR

IXFK230N20T

Abstract: IXFX230N20T PLUS247 ixfk23 230N20T
Contextual Info: Advance Technical Information IXFK230N20T IXFX230N20T GigaMOSTM Power MOSFET VDSS ID25 = = 200V 230A Ω 7.5mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings

IXFX170N20T

Abstract: IXFK170N20T PLUS247
Contextual Info: Advance Technical Information IXFK170N20T IXFX170N20T GigaMOSTM Power MOSFET VDSS ID25 = = 200V 170A Ω 11mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS

230N20T

Abstract: IXFN230N20T
Contextual Info: Advance Technical Information IXFN230N20T GigaMOSTM Power MOSFET VDSS ID25 = = 200V 230A Ω 7.5mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information MMIX1F230N20T GigaMOSTM TrenchTM HiperFETTM Power MOSFET VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 200V 168A Ω 8.3mΩ 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

Contextual Info: Advance Technical Information GigaMOSTM TrenchTM HiperFETTM Power MOSFET MMIX1F230N20T VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 200V 168A Ω 8.3mΩ 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

SDF120NA20

Abstract: D403
Contextual Info: Æiltton _ PRODUCT CÂTÂL @ HFVICFS- INC. N-CHANNEL ENHANCEMENT MOS FET 200V, 120A, 0.03Q ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS DRAIN-SOURCE VOLTAGE DRAIN-GATE VOLTAGE RGS=1.0Mn GATE-SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT CONTINUOUS (Tc = 25'C)

60N20F

Abstract: 60n20
Contextual Info: HiPerRFTM Power MOSFETs IXFH 60N20F IXFT 60N20F F-Class: MegaHertz Switching VDSS ID25 RDS on = = = 200V 60A Ω 38mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data TO-247 AD (IXFH)

60n20

Abstract: C-315
Contextual Info: Advance Technical Information HiPerRFTM Power MOSFETs IXFH 60N20F IXFT 60N20F F-Class: MegaHertz Switching VDSS ID25 RDS on = = = 200V 60A Ω 38mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH)

IXFN210N20

Abstract: IXFN210N20P
Contextual Info: IXFN210N20P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 188A Ω 10.5mΩ 200ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C

Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN210N20P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 188A Ω 10.5mΩ 200ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C