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    IXFN210N20P Search Results

    IXFN210N20P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFN210N20P
    		IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 200V 188A SOT-227B Original PDF 5
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    IXFN210N20P Price and Stock

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    IXYS Corporation IXFN210N20P

    MOSFET N-CH 200V 188A SOT-227B
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    DigiKey IXFN210N20P Tube 142 1
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    Littelfuse Inc IXFN210N20P

    MOSFET MODULE, 200V, 188A, 1.07KW;
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    Newark IXFN210N20P Bulk 139 1
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    IXFN210N20P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFN210N20

    Abstract: IXFN210N20P
    Contextual Info: IXFN210N20P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 188A Ω 10.5mΩ 200ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		IXFN210N20P 200ns E153432 100ms 210N20P 6-10-A IXFN210N20 IXFN210N20P PDF

    Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN210N20P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 188A Ω 10.5mΩ 200ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		IXFN210N20P 200ns E153432 100ms 210N20P 6-10-A PDF

    IXFN210N20

    Abstract: IXFN210N20P
    Contextual Info: Preliminary Technical Information IXFN210N20P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXFN210N20P 200ns OT-227 E153432 100ms 210N20P IXFN210N20 IXFN210N20P PDF