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    IXFN210N20P Search Results

    IXFN210N20P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFN210N20P
    		IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 200V 188A SOT-227B Original PDF 5
    SF Impression Pixel

    IXFN210N20P Price and Stock

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    IXYS Corporation IXFN210N20P

    Trans MOSFET N-CH 200V 188A 4-Pin SOT-227B
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    Verical IXFN210N20P 121 2
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    Mouser Electronics IXFN210N20P 1,547
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    TTI IXFN210N20P Tube 300
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    Future Electronics IXFN210N20P Tube 22 Weeks 300
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    TME IXFN210N20P 121 1
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    Littelfuse Inc IXFN210N20P

    Mosfet Module, 200V, 188A, 1.07Kw; |Littelfuse IXFN210N20P
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    Newark () IXFN210N20P Bulk 33 1
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    IXFN210N20P Bulk 17 1
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    RS IXFN210N20P Bulk 8 Weeks 10
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    Onlinecomponents.com IXFN210N20P
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    IXFN210N20P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFN210N20

    Abstract: IXFN210N20P
    Contextual Info: IXFN210N20P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 188A Ω 10.5mΩ 200ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		ixfn210n20p200nse153432100ms+3210n20p6-10-aixfn210n20 PDF

    Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN210N20P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 188A Ω 10.5mΩ 200ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		ixfn210n20p200nse153432100ms+2210n20p6-10-a PDF

    IXFN210N20

    Abstract: IXFN210N20P
    Contextual Info: Preliminary Technical Information IXFN210N20P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		ixfn210n20p200nsot-227e153432+3100ms210n20pixfn210n20 PDF