N-CH J FET Search Results

Contextual Info: AN 1084, AN1084S OPERATIONAL AMPLIFIERS A N I0 8 4 , AN1084S Quadruple J-FET Input Operational Amplifiers • Outline AN 1084 T h e A N 1084 and the AN1084S a re q uadruple o p eratio n al 1 <E am plifiers w ith input sta g e s consisting of P ch J-F E T adopting

AN1082

Abstract: FET-Input Operational Amplifiers AN1082S AN6581 1082S 1082
Contextual Info: Panasonic Operational Amplifiers AN 1082, AN 1082S, AN6581 Dual J-FET Input Operational Amplifiers • Overview The AN 1082, the A N 1082S and the AN6581 are dual operational amplifiers with input stages consisting of P-ch J-F E T adopting the ion implantation process, realizing

MB47082

Contextual Info: FU JITSU J - F E T IN P U T OPERATIONAL AMPLIFIER M B 47082 A p r. 1989 Edition 1.0 J-FET INPUT OPERATIONAL AMPLIFIER The Fujitsu MB47082 is designed fo r a dual o pe ratio nal am plifier w ith P ch a n n e l-typ e d J -F E T used a t th e Input s ta g e . Its slew ra te is fa s te r m ore

EE - CH4

Abstract: EE CH4
Contextual Info: Panasonic Operational Amplifiers AN 1084, AN1084S Quadruple J-FET Input Operational Amplifiers • Overview A N 1084 The AN 1084 and the AN1084S are quadruple opera­ tional amplifiers with input stages consisting of P-ch JFET adopting the ion implantation process, realizing high

AN1084

Abstract: 25A 1084 AN1084S
Contextual Info: Panasonic Operational Amplifiers AN 1 0 8 4 , A N 1084S Quadruple J-FET Input Operational Amplifiers • Overview The AN1084 and the AN1084S are quadruple opera­ tional amplifiers with input stages consisting of P-ch JFET adopting the ion implantation process, realizing high

2SJ331

Abstract: T120 Switch MEI-1202 TEA-1035 2SJ33
Contextual Info: DATA SHEET NEC - f t P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR _ f 2SJ331 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2S J 33 1 is P -ch an n el M O S Field E ffect T ra n s is to r d e ­ PACKAGE DIMENSIONS

Contextual Info: DATA SHEET MF f MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings unit: mm} T h e 2 S J 3 5 8 is a P - ch a n n e l v e rt ic a l M O S F E T th a t ca n be u se d a s a s w itc h in g e le m e n t. T h e 2 S J 3 5 8 c a n be

SD211

Abstract: SD211ADE SD215 SD215ADE SD215ACHP
Contextual Info: TOPAZ SEMICONDUCTOR OSE D £ ^GÖS22b □aOlDG'ì 7 j| — : T- 3 S-Z5 SD211Â, SP2ÜÂ SEMICONDUCTOR N-CHÂNNIL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION TO-20SAF TO-72 Package SD211ADE SD215ADE Shorting Rings Chips tn Waffle Pack SD211ADE/R

D78C10

Abstract: PD78C10 PD78C11 PD78C10CW 78C10 irf 4110 13412 capacitor MKL PD78C14G-36 PD78C11G-36
Contextual Info: N E C ELECTRONICS INC Tfi D Ë J fc>457S2S 0D133ñfl ¿/PD78C10/C11/C14 8-BIT, SIN G LE-CH IP CMOS M ICROCOM PUTERS WITH A /D CO N VER TER NEC NEC Electronics Inc. -— 6427525 N E C S ELECTRO N ICS Description The/7PD78C10, A/PD78C11, and/nPD78C14 single-chip

2SJ357

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package D raw ings unit: m m T h e 2S J 3 5 7 is a P -ch an n el ve rtica l M O S FET th a t can be used as a sw itc h in g e le m e n t. T h e 2S J 3 5 7 can be d ire c tly d rive n by an 1C o p e ra tin g at 5 V.

PHILIPS dual gate mosfets

Abstract: ecg mosfet ecg fet ecg jfet ecg463 ecg2383 Depletion
Contextual Info: PHILIPS E C G INC SME J> M bbSa^fi DD071b7 bGO « E C G Power MOSFETS ECG Type Description and Application ECG2392 M O S FET , N-Ch, ▲ Enhancement H i Speed S w itch Drain to Gate to Continuous Transcon­ Source Drain Source Breakdown Breakdown Current ductance

PA63H

Abstract: 2sc603 TRANSISTOR 2SC603 uPA15A PA54H PA60A UPA63H PA36A 2SC1733 UPA61A
Contextual Info: ü »II r, T ype No. Um ^PA 15A m m * n * *P A 33A + s ? '< , £ J 5 tt» 6 3 3 . /<PA34A + J7 » . If PA36A £ N P N Dual T ra n s la to r 4 > e -r> X S ;* (P - c h Dual M OS FET' (N -ch Dual M OS F E T ) f » 7 '< (N PN Dual T r a n s is to r ) « JM U E JM B

Contextual Info: LTC1435 r j u n e TECHNOLOGY High E ffic ie n cy Low Noise Syn ch ro n o u s S te p -D o w n Sw itch in g R e g u la to r FCRTURCS D C S C R IP T IO fl • Dual N-Channel MOSFET Synchronous Drive ■ Programmable Fixed Frequency ■ Wide V|n Range: 3.5V to 36V Operation

Simple Circuit Diagram For Digital Weighing Scale

Abstract: ICL710B 40khz crystal transducer ICL7126 47MF ICL7126CJL ICL7126CPL ICL7126CQH panel meter
Contextual Info: J V \Æ A \J V \ Lo w P ow er, 3% D ig it A /D C o n v e rte r Versatility and a ccu ra cy are inherent features o f this converter. The dua l-slo p e conversion te ch niqu e au to ­ m atically rejects interference signals co m m o n in in d u s­ trial environm ents. The true d iffe re n tia l in p u t and

Contextual Info: J V \Æ A \J V \ Lo w P ow er, 3% D ig it A /D C o n v e rte r Versatility and a ccu ra cy are inherent features o f this converter. The dua l-slo p e conversion te ch niqu e au to ­ m atically rejects interference signals co m m o n in in d u s­ trial environm ents. The true d iffe re n tia l in p u t and

john barrel 5.1 home theatre circuit diagram

Abstract: c code for overlap-save convolution SP 5501 hi lite Solar Garden Light YX 805 4 pin DIGITAL ECHO reverb IC 3102 ADSP-1080 HYBRID SYSTEMS ADC 560-3 analogic devices ADSP-1010A Analog Devices Data-Acquisition Databook 1984
Contextual Info: by Richard J. Higgins ir DIGITAL SIGNAL PROCESSING IN VLSI by Richard J. Higgins Do it digitally. These days, th is precept goes fa r beyond personal co m p u te rs. DSP a lg o rith m s and te ch n o lo g y have m ade it possible fo r digital te chniques to be used fo r accu­

2SJ99

Abstract: 2SK354 2SK336 2sk3542 2SK356 2SK347 2SK354A 2SK353 2SK345 2sk351
Contextual Info: - 44 - m ? S £ tt m € ìà m & nu Ì i]/ K 2SK331 V * tt $ ft * (V) X I* (A) ft * P d /P c h g m Vg s (V) 100m (min) (max) V d s (A) (A) (V) (min) (max) V d s (V) (V) (V) C—MIC J N 1) -20 GDO 10m G 0.06m 1. 5m 10 2SK332 H # Diff J N D -40 GDS 10m G 0. 2/CH

Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION N E 3 2 4 0 0 and N E 2 4 2 0 0 a re H e te ro J u n c tio n F ET ch ip th a t u tiliz e s th e h e tero ju n c tio n be tw e e n S i-d o p e d A IG a A s

ICL7126CPL

Abstract: Simple Circuit Diagram For Digital Weighing Scales
Contextual Info: J V \Æ A \J V \ L o w P ow er, 3% D ig it A / D C o n v e rte r Versatility and a ccu ra cy are inherent features o f this converter. The dua l-slo p e conversion te ch niqu e au to ­ m atically rejects interference signals co m m o n in in d u s­ trial environm ents. The true d iffe re n tia l in p u t and

AF111

Contextual Info: n A F lll • U A F 3 1 1 FET INPUT VOLTAGE COMPARATORS F A I R CH I L D L I N E A R I N T E G R A T E D C I R C UI T S G E N E R A L D E S C R IP T IO N — The /j A F 1 11 and /j A F 31 1 are m o n o lith ic , FE T in p u t V o ltage Compareto rs, constructed using the F a irc h ild Planar* epita x ia l process. The juAF111 series operates fro m the

8096 MICROCONTROLLER ADDRESSING MODES

Abstract: cq met t2a 250 ELLS 110 til 701 datasheet 68-PIN COP888EB V44A Emulator 8096
Contextual Info: m N a t i o n a n l PRELIM INAR j S e m i c o n d u c t o r COP888EB/COP889EB/COP688EB/COP689EB 8-Bit Microcontroller with CAN Interface, A /D , and UART • S ch m itt trigger inputs on Port G, L and M ■ Packages: 44 PLCC w ith 31 I/O pins 68 PLCC w ith 58 I/O pins

10 HFK

Abstract: 2SJ326 2SJ326-Z MEI-1202 TEA-1035
Contextual Info: DATA SHEET A MOS FIELD EFFECT POWER TRANSISTORS 2SJ326, 2SJ326-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS T h e 2 S J 3 2 6 is P -ch an n el M O S Field E ffect T ra n s is to r d e ­ in m illim eters sig n e d fo r s o le n o id , m o to r an d la m p d rive r.

HC4316A

Abstract: mc14066 74hc150 74HC4016
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C54/74HC4016A Product Preview Quad Analog Sw itch/ M ultiplexer/D em ultiplexer J SUFFIX CERAMIC PACKAGE CASE 632-08 High-Performance Silicon-Gate CMOS T h e M C 54 /74H C 4 016A u tilizes s ilic o n -g a te C M O S te ch n o lo g y to

motorola 74hc132

Abstract: 74hc132 74HC132 Pinout 74HC132 equivalent TM3J
Contextual Info: MOTOROLA SC { L O G I C I G2 D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC132 Q uad 2 -In p u t N A N D G ate w ith S ch m itt-Trigger Inputs J SUFFIX CERAMIC CASE 632-08 High-Performance Silicon-Gate CM OS The MC54/74HC132 is identical in pinout to the LS132. The device inputs are