MUR3080 Search Results

MUR30100PT

Abstract: MUR3080PT
Contextual Info: MUR3080PT, MUR30100PT Ultra Fast Recovery Diodes A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MUR3080PT MUR30100PT VRSM V 800 1000 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819

MUR3080 ultra fast recovery diodes

Abstract: MUR30100 MUR3080
Contextual Info: MUR3080, MUR30100 Ultra Fast Recovery Diodes Dimensions TO-247AC A C TAB C A C A=Anode, C=Cathode, TAB=Cathode MUR3080 MUR30100 VRSM V 800 1000 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845

MUR30100

Abstract: MUR3080
Contextual Info: SENSITRON MUR3080,MUR30100 SEMICONDUCTOR Technical Data Data Sheet 2664, Rev.- MUR3080,MUR30100 ULTRAFAST PLASTIC RECTIFIERS Features: • • • • • • 150 °C TJ operation TO-247AC package Planar Passivated Chips High Voltage Capability to 1000 Volts

ultra fast recovery diodes

Abstract: SEMPO ELECTRONIC MUR30100PT MUR3080PT
Contextual Info: MUR3080PT, MUR30100PT Ultra Fast Recovery Diodes A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MUR3080PT MUR30100PT VRSM V 800 1000 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32

Contextual Info: MUR3080 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time110n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.9 @I(FM) (A) (Test Condition)30

MUR3080

Contextual Info: MUR3080 Preferred Device SWITCHMODE Power Rectifier . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • • • http://onsemi.com Ultrafast 75 ns Typ Soft Recovery Time

MUR3080 ultra fast recovery diodes

Abstract: MUR30100 MUR3080
Contextual Info: MUR3080, MUR30100 Ultra Fast Recovery Diodes Dimensions TO-247AC A C TAB C A C A=Anode, C=Cathode, TAB=Cathode MUR3080 MUR30100 VRSM V 800 1000 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46

MUR3080

Abstract: 340E-02
Contextual Info: MOTOROLA Order this document by MUR3080/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Power Rectifier MUR3080 Motorola Preferred Device . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features:

Contextual Info: MOTOROLA Order this document by MUR3080/D SEMICONDUCTOR TECHNICAL DATA Advance Information MUR3080 SW ITCH MODE Pow er R ectifier Motorola Preferred Device . . . designed fo r use in sw itching pow er supplies, inverters and as free wheeling diodes, these s ta te -o f-th e -a rt devices have the following features:

U3080

Abstract: MUR3080
Contextual Info: MUR3080 Preferred Device SWITCHMODE Power Rectifier . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • • • http://onsemi.com Ultrafast 75 ns Typ Soft Recovery Time

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

CTX12SL

Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4

CTX12S

Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40

MUR Motorola fast diode

Abstract: schottky rectifier motorola mbr motorola MR760 T4 SOD-123 1N4004 1N4007 sod-123 MR MS SOD-123 MUR3080 ultra fast recovery diodes 1N5822 SMB motorola ZENER smb MRA4004
Contextual Info: Rectifiers In Brief . . . Continuing investment in research and development for discrete products has created a rectifier manufacturing facility that matches the precision and versatility of the most advanced integrated circuits. As a result, Motorola’s silicon rectifiers span

CTX12S

Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
Contextual Info: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

221D

Abstract: MURF820 MBR0520LT1 MBR2030CTL MBR2515L MBR2535CTL MBR4015LWT MBRB2515L MR2535S MBRB3030CTL
Contextual Info: Rectifiers In Brief . . . Continuing investment in research and development for discrete products has created a rectifier manufacturing facility that matches the precision and versatility of the most advanced integrated circuits. As a result, Motorola’s silicon rectifiers span

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •