MUR30100PT
Abstract: MUR3080PT
Contextual Info: MUR3080PT, MUR30100PT Ultra Fast Recovery Diodes A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MUR3080PT MUR30100PT VRSM V 800 1000 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819
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MUR3080 ultra fast recovery diodes
Abstract: MUR30100 MUR3080
Contextual Info: MUR3080, MUR30100 Ultra Fast Recovery Diodes Dimensions TO-247AC A C TAB C A C A=Anode, C=Cathode, TAB=Cathode MUR3080 MUR30100 VRSM V 800 1000 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845
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mur3080mur30100o-247acmur3080 ultra fast recovery diodes |
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rectifier diode 6 amp 400 volt
Abstract: 340E-01 transistor 2 Amp 3 volt MJH16018 rectifier diode 20 amp 800 volt blocking diode 20 amp 1200 volt MUR30100E 200 Amp current 1000 volt diode 100 Amp current 1000 volt diode blocking diode 200 amp 1200 volt
Contextual Info: Order this data sheet by MUR30100E/D MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA TM Sw itchm ode Pow er Rectifier MUR30100E . designed for use in switching power supplies, inverters and as freewheeling diodes, these state-of-the-art devices have the following features:
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mur30100e/dmur30100eo-21825137r+9rectifier diode 6 amp 400 volt340e-01transistor 2 amp 3 voltmjh16018rectifier diode 20 amp 800 voltblocking diode 20 amp 1200 volt200 amp current 1000 volt diode100 amp current 1000 volt diodeblocking diode 200 amp 1200 volt
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MUR30100
Abstract: MUR3080
Contextual Info: SENSITRON MUR3080,MUR30100 SEMICONDUCTOR Technical Data Data Sheet 2664, Rev.- MUR3080,MUR30100 ULTRAFAST PLASTIC RECTIFIERS Features: • • • • • • 150 °C TJ operation TO-247AC package Planar Passivated Chips High Voltage Capability to 1000 Volts
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ultra fast recovery diodes
Abstract: SEMPO ELECTRONIC MUR30100PT MUR3080PT
Contextual Info: MUR3080PT, MUR30100PT Ultra Fast Recovery Diodes A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MUR3080PT MUR30100PT VRSM V 800 1000 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32
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mur3080ptmur30100pto-247ad100oc+345ocyultra fast recovery diodessempo electronic
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MUR3080 ultra fast recovery diodes
Abstract: MUR30100 MUR3080
Contextual Info: MUR3080, MUR30100 Ultra Fast Recovery Diodes Dimensions TO-247AC A C TAB C A C A=Anode, C=Cathode, TAB=Cathode MUR3080 MUR30100 VRSM V 800 1000 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46
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BYW19-1000
Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820
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fo-0121-800-4-harrisbyw19-1000byx49-600+8byx49-1200byv72e-200rs8mtbyx49by229-1000unitrode crossbyt29-300byv72-200
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mur360ax
Contextual Info: Ultrafast Recovery Rectifiers Part Number Package Outline Peak Inverse Voltage VRWM (V) Max. Average Forward Current (Io) (A) Max. Forward Surge Current (IFSM) (A) Max Reverse Leakage Current (IR) ( A) Max Forward Voltage Drop (VF) (V) Max Reverse Recovery Time
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murf2030ctito-220abmur3020pto-247ad+5mur3020wtmurf3020cto-220fmur3060wtmur360ax
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BYX49-600
Abstract: BYW19-1000 BY229-1000 motorola diode cross reference BYX49 1200 BYX49-1200 BYV72E-200 BYT29 BYT29-300 BY229/1000
Contextual Info: FO-012.1 5/12/00 12:05 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H Y P E R F A S T RECTIFIERS Intersil Corporation provides the silicon advantage in a burgeoning market
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fo-012o-252o-263o-247+15o-251/to-252rating/10o-220aco-218o-204aabyx49-600byw19-1000by229-1000motorola diode cross referencebyx49 1200byx49-1200byv72e-200byt29byt29-300by229/1000
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mur2060
Abstract: MUR20100 MUR20100CT MUR3080 ultra fast recovery diodes STPR16*0CT MUR6020 MUR6020PT stpr10 STPR806D TO-247AC Package
Contextual Info: Fast Recovery Diodes Áûñòðîâîññòàíàâëèâàþùèåñÿ äèîäû Ultra Fast Recovery Diodes Tj=-40°C~+125°C, Tjm=+125°C V A Electrical Characteristics IR @ VR=VRRM IFSM VFmax @ IF 25°C 125°C A uA mA V A STPR502D 200 5 100 5 0.50 0.900
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stpr502do-220acstpr506dstpr805db+12stpr805dfstpr810dmur2060mur20100mur20100ctmur3080 ultra fast recovery diodesstpr16*0ctmur6020mur6020ptstpr10stpr806dto-247ac package
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