MT4S06 Search Results

MT4S06U

Contextual Info: MT4S06U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S06U VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 11.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm

MT4S06

Abstract: npn microwave power transistor
Contextual Info: MT4S06 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S06 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 11.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C)

Contextual Info: TO SHIBA MT4S06U TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S06U VH F—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.6 dB VCE = 3 V, IC = 3 mA, f = 2 GHz High Gain : |S2le|2 = H-5 dB (VCE = 3V, IC = 7mA, f = 2 GHz)

Contextual Info: TOSHIBA MT4S06 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S06 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2.9-0.3 • Low Noise Figure : NF = 1.6 dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High Gain -fr :|S2i e|2= H .5 dB

Contextual Info: MT4S06U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S06U VHF to UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 11.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm

MT4S06U

Contextual Info: TO SH IBA MT4S06U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S06U Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 Low Noise Figure TTicrh T-ain NF = 1.6 dB ( V C E = 3 V, In = 3 mA, f = 2 GHz 1.25 ± 0.1 ISoi J2 = 11 5 rITl

Contextual Info: TOSHIBA MT4S06U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S06U VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.6 dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High Gain : |S2i e|2 = H-5 dB (VCE = 3 V, IC = 7 mA, f = 2 GHz)

MT4S06

Contextual Info: MT4S06 TO SH IBA MT4S06 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.2 2 . 9 - 0 .3 NF = 1.6 dB VCE = 3 V, In = 3 mA, f = 2 GHz Low Noise Figure TTicrh (T-ain -fr -3 l R n i J 2 = 11 R H T *

Contextual Info: TOSHIBA MT4S06 MT4S06 T O SH IB A TRA NSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE Unit in mm VHF— UHF B A N D LO W NOISE A M PLIFIER APPLICATIO NS + 0.2 2 .9 -0 .3 Low Noise Figure High Gain NF = 1.6 dB VCE = 3 V, IC = 3 mA, f = 2 GHz -fi - S |S21el2= 11-5dB

MT4S06

Contextual Info: MT4S06 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S06 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 11.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

MT4S06U

Contextual Info: MT4S06U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S06U VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 11.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

2sc5108

Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Contextual Info: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

MT4S300T

Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Contextual Info: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones

MT4S300T

Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

2sc5066

Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製