MT4C1024 Search Results

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: MEG 1 MEG DRAM X MT4C1024 X 1 DRAM 1 DRAM FEATURES • Industry standard xl pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical • All inputs, outputs and clocks are fully TTL

Contextual Info: MT4C1024 L 1 MEG X 1 DRAM (M IC R O N DRAM 1 MEG x 1 DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cy cle re fre sh in 8m s (M T 4C 1024) o r 6 4 m s (M T 4C 1024 L) • In d u stry -stan d a rd x l p in o u t, tim in g , fu n ctio n s and p ack ag e s

MT4C1024

Abstract: MT4C1024-8
Contextual Info: ASO MT4C1024 883C 1 MEG X 1 DRAM AUSTIN SEMICONDUCTOR, INC. 1 MEG DRAM 1 DRAM X FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin DIP (D-6) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL

MT4C1024

Contextual Info: MICRON TECHNOL OGY INC 17E D • blllSMI 00017Mb *4 MICRON I MT4C1024 883C TECHMXOCY.OtC MILITARY DRAM 1MEG 1 DRAM FAST PAGE M O D E PIN ASSIGNMENT Top View • SM D (consult factory for reference number) » JAN M 38510/249 (D-6) p [ 1 • Industry standard pin-out and timing

MT4C1024-8

Abstract: smd FAA smd marking S5B marking mpde G5705 Marking 62315 C19B MT4C1024
Contextual Info: MICRON TECHNOLOGY INC SSE D b l l l S ^ GODSbS'l TM1 RI1CRON IMRN MT4C1024 883C I MEG X 1 DRAM _ :_ T - < 4 t - 2 , v i £ MILITARY DRAM 1 MEG 1 DRAM X FAST PAGE MODE PIN ASSIGNMENT Top View • SMD (consult factory for reference number)

MT4C1024

Abstract: micron MT4C
Contextual Info: MICRON SEMICONDUCTOR INC b3E S • hlllSMR G007544 Ô3Ô B U R N MT4C1024 L 1 MEG X 1 DRAM |U|C=RON DRAM 1 MEG x 1 DRAM FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 • Packages Plastic DIP (300 mil)

MT4C1024

Contextual Info: MICRON TECHNOLOGY INC S5E D • blllSHT 00041b5 456 « M R N M IC R O N 1 MEG - ' • DRAM 1 MEG X MT4C1024 X 1 DRAM 4 ' T f e > - Z 3 > - l S 1 DRAM FEATURES • Industry standard x l pinout, timing, functions and

MT4C1024

Contextual Info: MT4C1024 L 1 MEG X 1 DRAM |U|IC=RON 1 MEG x 1 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH • 512-cycle refresh in 8ms (MT4C1024) or 64ms (MT4C1024 L) • Industry-standard xl pinout, timing, functions and packages • High-performance CMOS silicon-gate process

MT4C1024

Contextual Info: MT4C1024 883C 1 MEG x 1 DRAM AUSTIN SEMICONDUCTOR, INC. 1 MEG x 1 DRAM DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin DIP (D-6) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL

MT4C1024DJ-7

Contextual Info: MT4C1024 L 1 MEG X 1 DRAM MICRON • SEMICONDUCTOR. iHC 1 MEG x 1 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 512-cycle refresh in 8ms (MT4C1024) or 64ms (MT4C1024 L) • Industry-standard x l pinout, timing, functions and packages • High-performance CMOS silicon-gate process

MT4C1024E

Abstract: MT4C1024E-12 MT4C4256E
Contextual Info: M IC R O M ERRATA DATA SHEET • TKHNOUXW. MC. 2805 East Columbia Road Bolso, Idaho 83706 TEL. 208 386-3900 TWX 910-970-5973 Q uality • Perform ance • Service r - v é -2.3- i f (1 MEG PAGE MODE DRAM) MT4C1024E MT4C4256E FEATURES • • • • •

Contextual Info: MT4C1024 L MEG X 1 DRAM 1 MEG DRAM X 1 DRAM FEATURES PIN ASSIGNMENT Top View • Industry standard x l pinout, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply • Low power, .3mW standby; 150mW active, typical

T4C1024DJ-7

Abstract: MT4C1024
Contextual Info: M T4C1024 L 1 MEG X 1 DRAM (M IC R O N DRAM 1 MEG x 1 DRAM FEATURES • 512-cycle refresh in 8m s (M T4C1024) or 64ms (MT4C1024 L) • Industry-standard x l pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply

bta 116

Abstract: z249 bza 55 MC27128A-20/BYA
Contextual Info: RE FE R EN CE GUIDE 3MD/JAN AUSTIN SEMICONDUCTOR-QPL CROSS REFERENCE For reference only ASI JAN PACKAGE TYPE (1) PART HUMBER SPEED (ns) PART NUMBER C MT4C1024 80 100 120 150 JM3851Q/24901 Z24902 /24903 /24904 BVC/BVA BVGÆVA BVC/BVA BVC/BVA 25 35 45 JM38510/29310

MT4C1024

Contextual Info: MICRO N T E C H N O L O G Y INC SSE D • 1=11154^ G D D 4 1 7 4 17T « M R N MT4C1024 L 1 MEG X 1 DRAM |VtlC=RON DRAM 1 MEG X 1 DRAM FEATURES PIN ASSIGNMENT Top View • Industry standard x l pinout, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process

mt4c1024dj7

Abstract: mt4c1024dj-7
Contextual Info: |v > ll = R O MT4C1024 L 1 MEG X 1 DRAM Í\J DRAM 1 MEG X 1 DRAM LOW POWER, EXTENDED REFRESH O 3J > FEATURES PIN ASSIGNMENT (Top View • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply

MT4C1024

Abstract: dram zip
Contextual Info: |U llC = R O N 1 MEG 1 MEG DRAM X MT4C1024 X 1 DRAM 1 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard xl pinout, tim ing, functions and packages • H igh-perform ance, CMOS silicon-gate process • Single +5V ±10% pow er supply

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: MT6D118 1 MEG X 18 DRAM MODULE M IC R O N 1 MEG X 18 DRAM FAST PAGE MODE FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply • All device pins are fully TTL compatible

Contextual Info: |U|IC=ROÍNJ 1 MEG DRAM MODULE X 8 MT8D18 DRAM MODULE 1 MEG X 8 DRAM FAST PAGE MODE MT8D18 LOW POWER, EXTENDED REFRESH (MT8D18L) FEATURES • Industry standard pinout in a 30-pin single-in-line package • High-perform ance, CM OS silicon-gate process • Single 5V ±10% power supply

Contextual Info: |U |IC R O N lEG X 1 MEG DRAM MODULE MT6D118 18 DRAM MODULE X 18 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 72-pin single-in-line package • High-performance CM OS silicon-gate process • Single 5V ±10% power supply

T3D19

Abstract: 30-pin simm memory "16m x 8" MT4C1024DJ MT3019 MT4C4001 30-pin SIMM
Contextual Info: [M IC R O N 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CM OS silicon-gate process

Cherie

Abstract: t3d25
Contextual Info: |U 1IC =R O N DRAM k - _ Ä 2 56K X MT3D2569 9 DRAM MODULE 256K x 9 DRAM _ FAST PAGE MODE MT3D2569 LOW POWER, F EXTENDED V T F N n P D RF REFRESH (MT3D2569 L) M O D IW 1I^ FL — FEATURES MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 • Packages