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MT3S113 Datasheets (9)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MT3S113	Toshiba	Japanese - Transistors	Original	PDF	250.12KB	7
MT3S113	Toshiba	Transistors	Original	PDF	203.28KB	7
MT3S113P	Toshiba	Transistors	Original	PDF	184.59KB	7
MT3S113P	Toshiba	Japanese - Transistors	Original	PDF	254.38KB	7
MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF SIGE HETEROJUNCTION BIPOLAR N	Original	PDF	199.18KB
MT3S113(TE85L,F)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF SIGE HETEROJUNCTION BIPOLAR N	Original	PDF	218.69KB
MT3S113TU	Toshiba	Japanese - Transistors	Original	PDF	245.48KB	7
MT3S113TU	Toshiba	Transistors	Original	PDF	177.96KB	7
MT3S113TU,LF	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF SIGE HETEROJUNCTION BIPOLAR N	Original	PDF	192.64KB

MT3S113 Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components MT3S113P(TE12L,F) - Tape and Reel (Alt: MT3S113P(TE12L,F))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MT3S113P(TE12L,F)	Tape & Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	MT3S113P(TE12L,F)		7,969			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components MT3S113TU,LF - Tape and Reel (Alt: MT3S113TU,LF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MT3S113TU,LF	Tape & Reel		16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.29	Buy Now
Mouser Electronics	MT3S113TU,LF		909			1 $1.40 10 $0.86 100 $0.57 1000 $0.38 10000 $0.30	Buy Now
Toshiba America Electronic Components MT3S113(TE85L,F) - Tape and Reel (Alt: MT3S113(TE85L,F))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MT3S113(TE85L,F)	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

MT3S113 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MT3S113 Abstract: transistor 2F to-236 4360A Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:\|S21e\|2=11.8dB(Typ.) (@ f=1GHz) Marking	Original	mt3s113 o-236 sc-59 transistor 2f to-236 +14360a	PDF
Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:\|S21e\|2=11.8dB(Typ.) (@ f=1GHz) Marking	Original	mt3s113 o-236 sc-59	PDF
mt3s113p Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:\|S21e\|2=10.5dB(Typ.) (@ f=1GHz) Marking	Original	mt3s113p sc-62	PDF
Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF = 1.15dB typ. (@ f=1GHz) • High Gain:\|S21e\| = 10.5dB (typ.) (@ f=1GHz)	Original	mt3s113p sc-62	PDF
Contextual Info: MT3S113 東芝トランジスタシリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113 ○ VHF～UHF 帯特低雑音・低歪み増幅用単位: mm 長 • 雑音特性が優れています。:NF=1.15dB 標準 (@ f=1GHz) • 高利得です。:\|S21e\|2=11.8dB(標準) (@ f=1GHz)	Original	mt3s113 o-236	PDF
MT3S113TU Contextual Info: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:\|S21e\|2=12.5dB Typ. (@ f=1GHz)	Original	mt3s113tu	PDF
Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:\|S21e\|2=10.5dB(Typ.) (@ f=1GHz) Marking	Original	mt3s113p sc-62	PDF
Contextual Info: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 3 2 1.1. Base 2.2. Emitter 3.3. Collector R7 1 1 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:\|S21e\|2=12.5dB Typ. (@ f=1GHz)	Original	mt3s113tu	PDF
Contextual Info: MT3S113P 東芝トランジスタシリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113P ○ VHF～UHF 帯特低雑音・低歪み増幅用単位: mm 長 • 雑音特性が優れています。:NF=1.15dB 標準 (@ f=1GHz) • 高利得です。:\|S21e\|2=10.5dB(標準) (@ f=1GHz)	Original	mt3s113p sc-62	PDF
Contextual Info: MT3S113TU 東芝トランジスタシリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113TU ○ VHF～UHF 帯低雑音・低歪み増幅用単位: mm 2.1±0.1 高利得です。:\|S21e\|2=12.5dB 標準 (@ f=1GHz) 3 2 0.7±0.05 現品表示	Original	mt3s113tu	PDF
Contextual Info: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 2 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:\|S21e\| = 12.5dB typ. (@ f=1GHz)	Original	mt3s113tu	PDF
Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB typ. (@ f=1GHz) • High Gain:\|S21e\| =11.8dB (typ.) (@ f=1GHz) 2	Original	mt3s113 o-236 sc-59	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	sce0004l ttc4116 2sc4118 tta1586 +162sa1588 2sc4117 2sa1587 2sc5233 2sc4738 2sa1832 gt30f131 gt30f124 tk18a60v smd m5 transistor 6-pin smd transistor h2a npn gt50n322 marking smd pnp transistor h2a gt30j124 30f124 tpcp8r01	PDF
TA4029CTC Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X Contextual Info: 製品カタログ 2011-1 東芝半導体製品カタログ高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8	Original	bcj0003g bcj0003f ta4029ctc ta4032ft +8tb7602tu mt4s300t mt4s300u mt4s301t ta4029tu sot-24 mt4s300 rfm12u7x	PDF

RFM70U12D Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919 Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版高周波デバイス高周波バイポーラ小信号トランジスタ高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ高周波ダイオード小信号 MMIC 高周波セルパック	Original	scj0004n 2sc2714 2sc2715 2sc2716 +162sc3123 2sc5064 2sc5084 2sc5089 2sc5094 2sc5106 rfm70u12d 2sc3136 rfm03u3ct 2sk709 rfm70u12 mt3s106 mt3s111 mt3s111p tim4450 tpm1919	PDF
3sk catalog Abstract: TE85L Toshiba Contextual Info: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS	Original	bce0003h 3sk catalog te85l toshiba	PDF
MT4S300T Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476 Contextual Info: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones	Original	bce0003f mt4s300t ta4032ft mt3s111tu +7japanese 2sc transistor 2010 mt4s301t ta4029ctc tb7602ctc mt3s111p japanese transistor 2sc 2010 2sk3476	PDF
MT4S300T Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors	Original	2010/9sce0004k 2sc1923 mt4s300t tgi0910-50 +8mt3s111p 2sc3136 s8850af ta4032ft mt4s300u vhf-uhf band oscillator 2sc5108 mt4s301t	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9sce0004k sc-43 2sc1815 700the +10gt30f124 tpcp8r01 gt30j124 japanese 2sc transistor 2010 smd transistor h2a smd marking 8l01 tk25e06k3 gt45f122 gt30g124 gt30f123	PDF
2sc5066 Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs	Original	sce0004i 2sc380tm 2sc5066 mt3s111p +8mt3s111 toshiba transistors catalog tim4450-4ul tgi1314-50l mt3s106 mt4s200t x-band low noise amplifiers toshiba 2sc3136	PDF
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	scj0004o sc-43 2sc1815 2sc732tm +142sc1959 2sa1015 2sc2240 2sa970 gt45f122 tk13a60u gt30f123 2sk4207 gt30j124 igbt gt30f123 gt30f122 gt30g122 2sc5471 igbt gt30j124	PDF
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	sce0004i sc-43 2sc1815 gt30j124 +9smd transistor h2a gt45f122 tpcp8r01 gt30f123 2sc1815 smd type smd marking 8l01 h2a smd 2sc5471 2sc5200 amplifiers circuit diagram	PDF
RFM70U12D Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403 Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版高周波デバイス高周波バイポーラ小信号トランジスタ高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ高周波ダイオード小信号 MMIC 高周波セルパック	Original	scj0004o 2sc2714 2sc2715 2sc2716 +162sc3123 2sc5064 2sc5084 2sc5089 2sc5106 2sc5109 rfm70u12d 2sc3136 rfm70 tgi8596-50 mt4s300t ta4029 ta4032ft ta4029tu ta4029ctc 2sk403	PDF
45F122 Abstract: GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322 Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	scj0004o sc-43 2sc1815 2sc732tm +142sc1959 2sa1015 2sc2240 2sa970 45f122 gt30f124 30g122 30f124 igbt gt30f124 gt30j124 gt45f122 gt30f123 tpca*8023 gt50n322	PDF

MT3S113 Search Results

MT3S113 Datasheets (9)

MT3S113 Price and Stock

Toshiba America Electronic Components MT3S113P(TE12L,F)

Toshiba America Electronic Components MT3S113TU,LF

Toshiba America Electronic Components MT3S113(TE85L,F)

MT3S113 Datasheets Context Search

MT3S113

mt3s113p

MT3S113TU

GT30F131

TA4029CTC

RFM70U12D

3sk catalog

MT4S300T

MT4S300T

GT30F124

2sc5066

GT45F122

GT30J124

RFM70U12D

*45F122