MRF52 Search Results

MMBR521LT1

Abstract: MRF5211LT1 TO-236-AA
Contextual Info: MOTOROLA Order this document by MMBR521LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast

2SA1370E

Abstract: 2SA13600 HITACHI AXIAL DIODE diode *7723 BCY77VII
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 < 40 45 50 2SA916K 2N4930 2N4931 2N4931S 2N4931S BF723 BF870S TBF870 2N3743 BF721 BF872S TBF872 MRF5211 MRF5211l HA7520 HA7520 HA7521 HA7521 MM4008 -ecY77VIT 55 60 65 70 75 80 BCY77VII BCY77VIII

transistor 1431 T

Abstract: BR521L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 D e s ig n e d p rim a rily fo r use in th e h ig h -g a in , lo w -n o is e s m a ll-s ig n a l am plifiers for operation up to 3.5 GHz. Also usable in applications requiring fast

MRF526

Abstract: transistor 5809 S5809
Contextual Info: 6367254 MOTOROLA SC X S TR S /R FT -0 4 C 2 9 8 1 8 M O T O R O L A SC -CXSTRS/R F3- m 04 DF|b3t.72S4 P.O. BOX 20912 • PHOENIX, ARIZONA 85036 /7 GDa^fllñ S MRF526 S E M IC O N D U C TO R S o D T"- •' The RF Line 2 5 0 mW — 1 75 M Hz — 7 .5 V RF TR A N S IS T O R

RF522

Abstract: MRF524 MRF521 mrf522 RF521
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MRF521 MRFC521 M RF522 M R F524 M RF5211L The RF Line PIMP S ilico n H igh-Frequency Transistors . . . d e s ig n e d p r im a r ily f o r us e in th e h ig h - g a in , lo w * n o is e s m a ll-s ig n a l a m p lifie r s fo r

MRF522

Abstract: MRF524 MRFC521 MRF5211 MRF5211L mrfc case 317-01 MRF521 motorola MRF microlab slug tuner SF
Contextual Info: 12E D I b3b755M G0Ö7732 M OTOROL A MO TO ROLA SC T | XSTRS/R F S E M IC O N D U C T O R TECHNICAL DATA MRF521 M RFC521 M RF522 M R F524 M R F52 11 ,L The RF Line P N P S ilic o n H ig h -F re q u e n cy T ra n s is to rs . designed primarily for use in the high-gain, low-noise sm all-signal amplifiers for

MRF522

Abstract: MRF522HXV
Contextual Info: MbE D • b3b?254 OOTS'llB b ■ l10Tb&#39;'P3l~2.l MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA DM0 MRF522HXV/HS Surface Mountable RF Transistor Ulflll Discrete Military Operation 10 Volt, 50 Milliampere Bipolar PNP MAXIMUM RATINGS Symbol valu*

API 160

Abstract: 2N4418 2N4889 transtek ha7723 2N4906 MOTOROLA 2N4881 Siliconix 2n4881 2N4947 2SA1370E
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 < 40 45 50 2SA916K 2N4930 2N4931 2N4931S 2N4931S BF723 BF870S TBF870 2N3743 BF721 BF872S TBF872 MRF5211 MRF5211l HA7520 HA7520 HA7521 HA7521 MM4008 -ecY77VIT 55 60 65 70 75 80 BCY77VII BCY77VIII

MRF522

Abstract: SE317 318b MRFC521
Contextual Info: 12E D I MOTOROLA b3b7554 GGÖ7732 MOTOROLA SC T | XSTRS/R F SE M IC O N D U C T O R mmmmm—mmimmmmm TECHNICAL DATA MRF521 MRFC521 MRF522 MRF524 MRF5211,L The RF Line P N P Silicon High-Frequency Transistors . designed primarily for use in the high-gain, low-noise small-signal amplifiers for

sf 1327

Abstract: tuner LG sf 118 c mmbr521lt1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon H igh-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed prim arily for use in the h ig h -g a in , lo w -n o ise s m a ll-sig n a l amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast

MMBR521LT1

Abstract: MRF5211LT1
Contextual Info: MOTOROLA Order this document by MMBR521LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast

MRF522

Abstract: MRF524 MRF5211L MARKING H3B MRF521
Contextual Info: I MOTOROLA SC X S T R S / R F 4bE D • b3b72SM QOIHTE? MOTOROLA fi ■ M O T b "P -3 1 - 0 SEMICONDUCTOR TECHNICAL DATA MRF521 IVIRFC 521 M RF522 M RF524 M RF5211L Th e RF Line PIMP S ilic o n H igh-Frequency T ra n sisto rs . . . desig ned p rim arily for use in the high-gam , low -noise sm all-sig n a l am p lifiers for

MRF5583

Contextual Info: MRF521 IL See MRF521 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF5583 The RF Line DIE SOURCE SAME AS 2N5583 P N P S ilic o n H igh F re q u e n cy T ra n s is to r IC = —500 m A SURFACE MOUNT HIGH FREQUENCY TRANSISTOR PNP SILICON . . . d e s ig n e d fo r a m p lifie r, o s c illa t o r o r f r e q u e n c y m u ltip lie r a p p lic a t io n s in in d u s tria l

F5211

Abstract: 24 LC 0261 MMBR521L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B R 521L T 1* MRF521 M R F 5 2 1 1LT1 The RF Line PNP Silicon H igh-Frequency Transistor ‘ Motorola Preferred Device Designed primarily for use in the high-gain, !ow-noise small-signal amplifiers for operation up to 3.5 GHz. Also usable ¡n applications requiring fast switching

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

Contextual Info: SEP 2 5 1991 Prelim inary Inform ation This document contains information on a new product The parametric information, although not fully characterized, is the result of testing initial devices. D istinguishing Features • Includes a Pin Electronics three-statable Driver,

Contextual Info: Preliminary Information T his docum ent contains inform ation on a new product. T he param etric in ­ form ation, although not fully characterized, is the result o f testing initial devices. Distinguishing Features • Includes a Pin E lectronics threestatable Driver, D ual C om para­

MHW707-2

Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

2N5109 motorola

Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­

2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

2N3553 motorola

Abstract: MRF229 MRF581 mrf237 MOTOROLA MOTOROLA SELECTION 2n3553 MRF314A 2N3866 MOTOROLA motorola mrf237 MRF227 MRF340
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.