MRA05 Search Results

MRA0510-50H

Contextual Info: MRA0510-50H NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 4L FLG. DESCRIPTION: The ASI MRA0510-50H is Designed for Class AB Linear Amplifier Applications up to 1000 MHz. E FEATURES: B C B C • Omnigold Metalization System • Diffused Ballast Resistors.

MRA0500-19L

Abstract: MRA0500
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRA0500-19L The RF Line UHF Pow er Transistor B dB TO 500 MHz 19 WATTS BROADBAND UHF POWER TRANSISTOR . . . desig n ed p rim a rily fo r w id e b an d , large-signal o u tp u t and d riv e r a m p lifie r stages to 500 MHz.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRA0510-50H The RF Line UHF P o w er Transistor . . . desig n ed p rim a rily fo r w id e b a n d , large-signal o u tp u t and d riv e r a m p lifie r stages in th e 500 to 1000 MHz fre q u e n cy range. 7 dB 500-1000 MHz

MRA0510-50H

Contextual Info: MRA0510-50H NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400X425 4L FLG. DESCRIPTION: The ASI MRA0510-50H is Designed for Class AB Linear Amplifier Applications up to 1000 MHz. FEATURES: • Omnigold Metalization System • Diffused Ballast Resistors.

motorola sps transistor

Abstract: MOTOROLA POWER TRANSISTOR 14 905 motorola BALLAST MOTOROLA MRA0510-50H motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRA0510–50H/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA0510-50H Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers

MOTOROLA POWER TRANSISTOR

Abstract: motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRA0510–50H/D SEMICONDUCTOR TECHNICAL DATA MRA0510-50H Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MRA-1225R00JE12

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . WIREWOUND RESISTORS Ideal for Audio and Medical Imaging Equipment MR A Non-Magnetic, Non-Inductive, Axial-Leaded, Wirewound Resistors Key Benefits • Non-magnetic and all welded constructions greatly enhance frequency response.

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

motorola transistor cross reference

Abstract: MRF660 MRF648 Motorola transistors MRF630 transistor 7905
Contextual Info: MOTOROLA SC XSTRS/R F 4fe,E D WM b 3 b ? 2 S 4 00=13843 =1 • M O T b RF Power Bipolar Transistors — UHF Transistors (continued) T -3 3 ^ 7 5 0 0 -1 0 0 0 MHz BAND Capable of operation in either class AB or C, the following devices are designed for operation to 1 GHz. Gold metallized die, diffused

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

Selector Guide

Abstract: MR100 MR300 MR93 MR600 MR500 MR700 MR602 NS002 MRA12
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . WIREWOUND RESISTORS Resistive Products Resistors - Wide Range of Power Ratings An Overview of Precision Wirewound Resistors from Vishay Dale KEY BENEFITS • • • • • • • • A wide range of power ratings 0.12 W to 250 W

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

MRA Precision metal film resistor

Contextual Info: MRA Precision Metal Film Resistors Europe’s No 1 selling axial thin film high precision resistor. Stable films are sputtered on to high purity alumina rods, then covered in tough epoxy to protect from any environmental extremes • Power dissipation up to 2W

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Pow er Transistor Designed primarily for wideband, large-signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers • Specified 28 Volt, 1000 MHz Characteristics:

Mills

Abstract: MRA10 Mra12 MRA05
Contextual Info: HUNTINGTON ELECTRIC, INCORPORATED Page 16 RESISTORS FOR THE AUDIO INDUSTRY Non-magnetic, non-inductive, all welded construction greatly enhances frequency response. Combined with Aryton-Perry winding inductive reactance and signal loss are almost totally eliminated.

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Contextual Info: MRA www.vishay.com Vishay Mills 绕线电阻，无磁，无感，轴向 特性 • 高温涂层（>350度） • 非磁性和全焊接结构大大提高频率响应。 结合无感无感绕组的感抗和信号损失几乎完全 消除。 • 适用于音频行业

MRA05

Abstract: MRA-12 MRA-1225R00JE12
Contextual Info: MRA www.vishay.com Vishay Mills Wirewound Resistors, Non-Magnetic, Non-Inductive, Axial Lead FEATURES • High temperature coating > 350 °C • Non-magnetic and all welded constructions greatly enhance frequency response. Combined with non-inductive Ayrton-Perry

marking code e48

Abstract: MRA-1225R00JE12 MRA12
Contextual Info: MRA www.vishay.com Vishay Mills Wirewound Resistors, Non-Magnetic, Non-Inductive, Axial Lead FEATURES • High temperature coating > 350 °C • Non-magnetic and all welded constructions greatly enhance frequency response. Combined with non-inductive Ayrton-Perry

transistors JX 6822 A

Abstract: MATSUA compressor R12 scf 101 saw filter gte wiring diagram audio amplifier ic 6283 am/transistors JX 6822 A Sansui 21 i fs circuit diagram MC145202 addendum ne602 scrambler motorola power transistor 7752 MC145026
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . viii Chapter One Selector G u id e .1.1-1