MPS5 Search Results

2n2222 to-92

Abstract: 2N4970 MPS3393 2N2219 transistor PN2218 2n2222 to92 2N4954 FR 9024 MMBT3704 PN2219
Contextual Info: NATL SEMICOND DISCRETE H2E D M T -Z l-ai t,SD1130 0D37772 3 • NPN General Purpose Transistors by Ascending Vceo (continued) Part Type MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS5172 MPS6515 MPS6520 MPS6521 MPS6522 MPS6560 PE4010 PE8050 PN3565 PN5135

MPS517

Abstract: MPS5179 MPS5179G MPS5179RLRA MPS5179RLRAG MPS5179RLRP MPS5179RLRPG Marking code mps
Contextual Info: MPS5179 Preferred Device High Frequency Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

MPS5172

Abstract: MPS 5172
Contextual Info: MPS5172 General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 25 Vdc Collector−Base Voltage VCBO 25 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 100

MPSA10

Abstract: MPS5172 MPS-A10 NPN Transistor TO92 25v
Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS5172 IME D | 7 * lb M m 2 0007321 | NPN EPITAXIAL SILICON TRANSISTOR'7 AMPLIFIER TRANSISTÖR • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

PA6015A

Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219

MRF5711LT1

Abstract: MRF571 MBR571 MPS571 E4E SOT23 vqb 71 LG 631 IC Motorola TE 2198 MBR571LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency TVansistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as

0 258 007 033

Abstract: Transistor 2274
Contextual Info: MPS536 CASE 29-04, STYLE 2 TO-92 TO-226AA M A XIM U M RATINGS Symbol MPS536 Unit Collector-Emitter Voltage VCEO -1 0 Vdc Collector-Base Voltage VCBO -1 5 Vdc Vdc Rating Emitter-Base Voltage HIGH FREQUENCY TRANSISTOR Ve b o -4 .5 Collector Current — Continuous

1N3195

Abstract: MPS5179
Contextual Info: MOTOROLA Order this document by MPS5179/D SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor MPS5179 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc

MPS 5172

Abstract: MPS5172
Contextual Info: MPS5172 General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 25 Vdc Collector−Base Voltage VCBO 25 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 100

Contextual Info: MPS5179 Preferred Device High Frequency Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20

Contextual Info: MPS5137 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MPS5127 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.

Contextual Info: MPS5179 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m’ Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)15

Contextual Info: MPS5131 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

8C533

Abstract: 2SC3478-k 2SC3744 2SC3478K 2sc3248 2SC2230Y je5551 2SC238 SANYO NEG KT611
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 5 10 2S0668A 2S0757 2SC2383 2S0669A 8F294 TMPT5551 MPS5551M S05551 2SC1654 2SC1654 ~:8~~654N6 15 20 MM8C1654N6 2SC2910 2SC2230 2SC2383R MM8C1654N7 MM8C1654N7 JE5551A 8C533 ~~g~~:~ 25 30 2SC3645R JE5551 8SR19A A

Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise SYMBOL

bf282

Abstract: mps51
Contextual Info: S E M IC O N D U C T O R tm / MMBT5179 / PN5179 MPS5179 PN5179 MMBT5179 SOT-23 Mark: 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |^A to 30 m A range in common em itter or comm on base m ode of operation, and in low frequency

TRANSISTOR C 3223

Abstract: TRANSISTOR C 1177 BT5179 NPN power transistor spice
Contextual Info: Sáfe:-O O W :Oí •v MPS5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |uA to 30 m A range in common em itter or common base m ode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.

Contextual Info: ON Semiconductort High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20 Vdc Emitter −Base Voltage VEBO 2.5 Vdc Collector Current — Continuous

tt 2146

Abstract: MPS5402S MPS5402S-01 IR LFN 0623 tt 2146 m LFN ir T107 MPS54 333 045 01
Contextual Info: MPS5402S-01 <'.y. • ■ . -V .y % >>* yYV/fyA*^ ,-.C|l.f,.v, !■-'■ I Z<r>U&n ngfë^? t <r>-0 « ír¿'£ 5Ü ■ û Ä* U í ? 0 H : mm M PS5402S-01 <7>t > ^ ¿ tz o . 5% ! ± í $ Y - 'J ¡ ± ? - í i- 0 ' - m m ± t > ^ y v m LTÜ xSf • - í - ? ' "j M c :B ) ± - J j- t y * Y ~ e

3SM diode

Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2N1893 motorola

Abstract: BSW32 2N1764 2N1742 BC447 MPSH04 2N1841 2N1956 2N1821 BSW39
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

MPS5172

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise SYMBOL VALUE UNITS Collector Emitter Voltage