MPD42 Search Results

HM53462PZ-10

Abstract: HM53461P-10 HM53462P-10 MSM51C262-80 PD41264V-12 Scans-00108173
Contextual Info: - 376 2 5 6 K v ; i / f • * ° — h • ij V S S h l* K (R A M /S A M I h ÿ y H M 5 3 4 6 1 P -1 0 .-1 2 .-1 5 H M 5 3 4 6 2 P -I0 .- 1 2 .-1 5 MPD42264C- 10, -1 0 A m PD 41 264C-12,-15 H M 5 3461P Z -10, -1 2 , -15 H M 5 3 4 6 2 P Z -1 0 ,-1 2 ,-1 5

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT M>D42S16800,4216800,42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the //PD42S16800, 42S17800 can execute CAS before RAS self refresh.

TOED101

Contextual Info: NEC M OS INTEGRATED CIRCUIT /¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the ¿iPD42S16800, 42S17800 can execute CAS before RAS self refresh.

Contextual Info: NEC MOS INTEGRATED CIRCUIT MC-42S1000LAA32S SERIES 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE D escription The MC-42S1000LAA32S series is a 1 048 576 w ords by 32 bits dynam ic RAM m odule (Small O utline DIMM) on w hich 8 pieces o f 4 M DRAM : mPD42S4400LGS (TSOP(ID) are assembled.

NEC 4216160

Contextual Info: MOS INTEGRATED CIRCUIT f iPD42S16160,4216160,42S18160,4218160 16 M -BIT DYNAM IC RAM 1 M -W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The mPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs. These differ in refresh cycle and the /iPD42S16160, 42S18160 can execute CAS before RAS self refresh (see

nec 7805

Abstract: 7805 nec NEC JAPAN 7805 TCA 7805 CI 7805 pin diagram DETAILS of ic 7805 7805 nec japan
Contextual Info: PRELIM INARY DATA SHEET CMOS INTEGRATED CIRCUIT mPD42S17805, 4217805 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description The jjPD42S17805, 4217805 are 2 097 152 words by 8 bits CMOS dynam ic RAMs w ith optional hyper page mode. Hyper page m ode is a kind o f the page mode and is useful fo r the read operation.

Contextual Info: NEC MOS INTEGRATED CIRCUIT MPD4216100, 4217100 16M -B IT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The fiPD4216100, 4217100 are 16 777 216 words by 1 bit dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 16 777 216 words by 1 bit organization

DYNAMIC RAM CROSS REFERENCE

Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
Contextual Info: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102

LM316

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MEC mPD42S18165, 4218165 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S18165, 4218165 are 1 048 576 words by 16 bits CMOS dynamic RAMs w ith optional hyper page

marking a70 8 pin ic

Contextual Info: MOS INTEGRATED CIRCUIT mPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /iPD42S16405L, 4216405L are 4 194 304 words by 4 bits dynamic CMOS RAMs w ith optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

Contextual Info: PRELIM IN A RY DATA SH EET MOS INTEGRATED CIRCUIT mPD42S18165L, 4218165L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/W RITE MODE Description The /iPD42S18165L, 4218165L are 1 048576 words by 16 bits CMOS dynam ic RAM s w ith optional hyper page

b427SES

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT >IEC MPD42S18165,4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /j PD42S18165, 4218165 are 1 048 576 words by 16 bits CMOS dynam ic RAMs w ith optional hyper page

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The mPD42S16405L, 4216405L are 4 194 304 words by 4 bits dynamic CMOS RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

d4218160

Abstract: H1311 4218160LG 5-A70
Contextual Info: NEC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ mPD42S16160L, 4216160L, 42S18160L, 421816QL 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The MPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The/iPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /x P D 4 2 S 1 7 4 0 5 , 4 2 1 7 4 0 5 16M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE EDO D escription The /¿PD42S17405,4217405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO).

PD424402

Abstract: D424* NEC
Contextual Info: pPD424402 1,048,576 X 4-Bit Dynamic CMOS RAM IH H i W NEC Electronics Inc. Description Pin Configurations ThejuPD424402 is a static-column dynamic RAM organ­ ized as 1,048,576 by 4 bits and designed to operate from a single + 5-volt power supply. Advanced polycide

nec 14t tv

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / juPD42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /UPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

001107

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 42S 16405L , 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n T h e/iP D 42S 16 405L , 4216405L a re 4 ,1 94,304 words by 4 bits CMOS dynam ic RAM with optional hyper page mode

Contextual Info: SEC pPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The juPD4216100 and the /iPD4217100 are fast-page dynamic RAMs organized as 16,777,216 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The /JPD4216400, 4217400 are 4 194 304 w o rd s by 4 bits d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP II and 26-pin plastic SOJ.

424260 NEC

Abstract: 424260-80
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e //P D 42S 4260,424260 are 262,144 w o rd s by 16 b its d y n a m ic C M OS R A M s. T h e fa s t page m o d e and b yte

Contextual Info: DATA SHEET M O S INTEGRATED CIRCUIT /1PD42S4800, 424800 4 M-BIT DYNAM IC RAM 512 K-WORD BY 8-BIT, FA ST PAGE M ODE Description The /¿PD42S4800, 424800 are 524,288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

MC-424000F32B-60

Contextual Info: PRELIMINARY DATA SHEET CMOS INTEGRATED CIRCUIT JEC / MC-424000F32 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-424000F32 is a 4,194,304 words by 32 bits dynamic RAM module on which 8 pieces of 16M DRAM: jiPD4217405 are assembied.